Formation of part families to design cells with alternative routing considerations

A heuristic algorithm for the formation of part families to design cells with consideration to alternative routing of parts is presented. Most of the existing algorithms in cellular manufacturing systems utilize fixed routings for parts. Consideration of alternative routings in the design of cells is important for improving operational aspects of cellular manufacturing systems. An example problem solved is included in the paper.     

Fixed-point error analysis of discrete Wigner-Ville distribution

The Wigner-Ville distribution (WVD) has been a powerful signal processing tool for time-frequency signal analysis. Consequently, many algorithms have been proposed in the literature for computing the WVD in real-time applications. However, Boashash (1987) has proposed and showed that the evaluation of the analytic signal using the time-domain approach, and involving the Hilbert transformer, is the most efficient algorithm for real-time applications. A fixed-point error analysis of this algorithm has been carried out. The theoretical noise-to-signal ratio (NSR) is derived and verified through simulation. The results indicate that for this algorithm, the NSR increases by 0.5 bit/stage, whereas for the other algorithms, it increases by 1 bit/stage     

Biodegradation of nitrate esters. II. Degradation of nitrocellulose by a fungus isolated from a double-base propellant

An organism found to be growing on moist double-base propellant, containing nitrocellulose (NC) and nitroglycerine aerobically degraded NC in submerged cultivation. This organism, which was subsequently identified as Penicillium corylophilum Dierckx, was able to degrade the NC (13.17%N) when it was present as the sole nitrogen source, in conjunction with either starch or xylan as a carbon source. It was found that 20% of the NC was utilized in a 3-day period. Also, NC degradation was studied utilizing Fusarium solani IFO 31093, a denitrifying fungus, in combination with P. corylophilum; however, no increased utilization was observed. Evidence for the degradation includes a decrease in the NC weight, an increase in the biomass weight, the presence of celluloytic and denitrifying enzymes, and other appropriate growth parameters. © 1995 John Wiley & Sons, Inc.     

Characterization of a lectin from goat peripheral blood lymphocytes

A D-glucose specific lectin was isolated from goat peripheral blood lymphocytes by affinity chromatography on N-acetyl D-glucosamine agarose gel. The fluorescence intensity of 4 methyl umbelliferyl D-glucose was quenched to about 62% on addition of the lectin. This lectin gave a single band corresponding to 112 kDa in SDS-PAGE irrespective of treatment with 2-mercaptoethanol. The molecular weight and the Stoke's radius of the lectin in the native conditions were found to be 114 kDa and 4.54 nm, respectively, as determined by gel filtration on Sephacryl S 500 column. The lectin was found to be a glycoprotein with 5.6% of neutral hexose content and 5.5% of sialic acid. The lectin agglutinated trypsinized rabbit erythrocytes and human type A erythrocytes. The hemagglutinating activity was dependent on the presence of divalent cations like Mn2+ and Ca2+. Optimum pH, ionic strength and temperature for rebinding of lectin to acid treated Sephadex G200 were found to be 7.5, 0.16 and 30-37 degrees C, respectively.     

Measurement of the current transient in Ta2O5 films

Current vs. time (I−t) measurements were performed on Ta₂O₅-based devices. Charge build-up at the Ta₂O₅/SiO₂ interface was used to explain the transient. The interfacial charge density was calculated from the I−t curve and the maximum was found to be 398 nC cm^-2 and 317 nC cm^-2 for Al/Ta₂O₅/Si and Al/Ta₂O₅/SiO₂/Si capacitors respectively. The value for MTOS was comparable with the value obtained by quasi-static measurements.     

Noise-margin limitations on gallium-arsenide VLSI

Two factors which limit the complexity of GaAs MESFET VLSI circuits are considered. Power dissipation sets an upper complexity limit for a given logic circuit implementation and thermal design. Uniformity of device characteristics and the circuit configuration determines the electrical functional yield. Projection of VLSI complexity based on these factors indicates that logic chips of 15000 gates are feasible with the most promising static circuits if a maximum power dissipation of 5 W per chip is assumed. While lower power per gate and therefore more gates per chip can be obtained by using a popular E/D FET circuit, yields are shown to be small when practical device parameter tolerances are applied. Further improvements in materials, devices, and circuits will be needed to extend circuit complexity to the range currently dominated by silicon     

Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si

Quasi-static and high frequency capacitance-voltage (C-V) measurements of Al/Ta₂O₅/SiO₂/Si (MTOS) capacitors are analysed. Space charge build-up at the Ta₂O₅-SiO₂ interface and the frequency response of these charges are explained. It is also found that the leakage current is not the sole contributor to the discrepancies observed in quasi-static measurements, as suggested in the literature. An estimate of the interface charge is also presented.     

Diffused junction p+−n solar cells in bulk GaAs—II: Device characterization and modelling

The photovoltaic characteristics of p⁺-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20%.     

Thermodynamics study of liquid Cu−Mg alloys by vapor pressure measurements

Metallurgical and Materials Transactions B -