Piezoelectric GaN sensor structures

Free-standing GaN and AlGaN/GaN cantilevers have been fabricated on (111) silicon substrate using dry etching. On these cantilevers, a piezoresistor and a high-electron-mobility transistor (HEMT) structure have been realized, and the piezoresponse has been characterized. Cantilever bending experiments resulted in a Young's modulus of approximately 250 GPa, a sensitivity of K/spl sim/90, and a modulation of the HEMT current of up to 50%. It is seen that the piezoresponse could be related to both the bulk properties and the properties of the heterostructure interface.     

AILV1 gene from the yeast Arxula adeninivorans LS3--a new selective transformation marker

The ILV1 gene of the yeast Arxula adeninivorans LS3 (AILV1) has been cloned from a genomic library, characterized and used as an auxotrophic selection marker for transformation of plasmids into this yeast. One copy of the gene is present in the Arxula genome, comprising 1653 bp and encoding 550 amino acids of the threonine deaminase. The protein sequence is similar (60.55%) to that of the threonine deaminase from Saccharomyces cerevisiae encoded by the gene ILV1. The protein is enzymatically active during the whole period of cultivation, up to 70 h. Maximal activities, as well as protein concentrations of this enzyme, were achieved after cultivation times of 20-36 h. The AILV1 gene is a suitable auxotrophic selection marker in transformation experiments using an Arxula adeninivorans ilv1 mutant and a plasmid containing this gene, which is fused into the 25S rDNA of Arxula adeninivorans. One to three copies of the linearized plasmid were integrated into the 25S rDNA by homologous recombination. Transformants resulting from complementation of the ilv1 mutation can be easily and reproducibly selected and in addition are mitotically stable. Therefore, the described system is preferred to the conventional selection for hygromycin B resistance.     

In situ STM study of the effect of chlorides on the initial stages of anodic oxidation of Cu(111) in alkaline solutions

In situ electrochemical scanning tunneling microscopy (STM) has been applied to study the mechanisms of growth of passive layers on Cu(111) in NaOH solutions in the presence of chlorides. For [Cl⁻]/[OH⁻]=0.01, the same ordered precursor phase of adsorbed OH is observed in the underpotential region of oxidation as in Cl⁻-free solutions. Atomically resolved images reveal the structure of the reconstructed topmost metal plane and the threefold hollow adsorption site of the hydroxide. The induced reconstruction causes the ejection of Cu atoms that contribute to the observed lateral growth of the terraces and to the formation of 2D Cu ad-islands in the final stages of the adsorption process. For [Cl⁻]/[OH⁻]=0.1, threadlike nanostructures resulting from the reaction of the ejected Cu atoms with chlorides are formed before agglomeration with the 2D Cu ad-islands formed in the final stage of the hydroxide adsorption process. For [Cl⁻]/[OH⁻]=10, the step edges, which are normally the preferential sites of the reaction with hydroxide, are blocked by the formation of non-ordered surface chloride complexes. Hydroxide adsorption still predominates the surface reaction on the terraces but the 2D ad-islands form immediately due to the blocking of the step edges. In the potential range of Cu(I) oxide formation, crystalline Cu(I) oxide layers are formed with a high density of steps and (111) terraces. Their step edges are rougher in the presence of chlorides which indicates a Cl⁻-enhanced localized dissolution reaction of the oxide layers at step edges.     

Study of Spin-Valve Operation in Permalloy–SiO2–Silicon Nanostructures

Magnetotransport studies are performed on nanoscale Permalloy(Py)–(Mg)–SiO₂-degenerate Si(100) tunneling devices in spin-valve geometry with and without Mg interlayer. Highly remanent, single domain Py electrodes (15–100-μm length, 100–1000-nm width) are realized by electron-beam lithography, electron-beam evaporation, and subsequent lift-off. Different widths ensure subsequent switching of the Py nanoelectrodes in increasing magnetic fields. A suppression of spin-polarized current is expected for antiparallel magnetization configuration of source and drain contacts (i.e. positive magnetoresistance) if spin injection and detection have been successfully implemented. Magnetic hysteresis curves of Py nanowire arrays measured at temperatures from 5 K up to 300 K reveal increasing coercive fields (up to 40 mT) for decreased nanowire widths as required for device operation. Small positive magnetoresistance is observed for the spin-valve geometry with Mg interlayer at 4.2 K, contrary to the negative anisotropic magnetoresistance measured of single wires.     

Diffusion des Stickstoffs in flüssigen eisenreichen Mehrstofflegierungen

Darstellung der Theorien zur Berechnung von Diffusionskoeffizienten des Stickstoffs in reinem flüssigem Eisen. Aussagen über den thermodynamischen Faktor zur Bewertung des Einflusses von Legierungselementen. Angabe empirischer Ansätze zur Berechnung des Einflusses von Legierungselementen mit Hilfe von Aktivitätskoeffizienten und Gleichgewichtslöslichkeiten sowie ihre Anwendung auf Systeme mit einem oder mehreren Zusatzelementen. Hinweise auf die Notwendigkeit weiterer Versuche zur Erhärtung der Zusammenhänge auch in theoretischer Sicht.     

Einfluß verschiedener Legierungselemente auf die Größe des γ-Raumes im System Eisen-Chrom-Kohlenstoff

Zusammenwirken der beiden geschlossenen γ-Felder der Systeme Eisen–Chrom und Eisen–Vanadin in Gegenwart von Kohlenstoff. Eisenecke des Vierstoffsystems. Schnitte lei 1050 °C, 1% V, 13% Cr und 0,2% C.     

Mechanisms, models, and simulations of metal-coated fiber consolidation

Recent experimental studies of the hot isostatic consolidation of Ti-6Al-4V-coated SiC fibers contained in cylindrical canisters have revealed an unexpectedly high rate of creep densification. A creep consolidation model has been developed to analyze its origin. The initial stage of consolidation has been modeled using the results of contact analyses for perfectly plastic and power-law creeping cylinders that contain an elastic ceramic core. Final stage densification was modeled using a creep potential for a power-law material containing a dilute concentration of cusp-shaped voids with a shape factor similar to that observed in the experiments. Creep rates were microstructure sensitive and so the evolution of matrix grain size and the temperature dependence of the α/β-phase volume fractions were introduced into the model using micromechanics-based creep constitutive relationships for the matrix. To account for load shielding by the deformation resistant canister, the consolidation model was combined with an analysis of the creep collapse of a fully dense pressure vessel. The predicted densification rates were found to agree well with the experimental observations. The high densification rate observed in experiments was the result of the small initial grain size of the vapor-deposited matrix combined with retention of the cusp shape of the interfiber pores.     

Influence of structural properties on ballistic transport in nanoscale epitaxial graphene cross junctions

In this paper we investigate the influence of material and device properties on the ballistic transport in epitaxial monolayer graphene and epitaxial quasi-free-standing monolayer graphene. Our studies comprise (a)?magneto-transport in two-dimensional (2D) Hall bars, (b)?temperature- and magnetic-field-dependent bend resistance of unaligned and step-edge-aligned orthogonal cross junctions, and (c)?the influence of the lead width of the cross junctions on ballistic transport. We found that ballistic transport is highly sensitive to scattering at the step edges of the silicon carbide substrate. A suppression of the ballistic transport is observed if the lead width of the cross junction is reduced from 50?nm to 30?nm. In a 50?nm wide device prepared on quasi-free-standing graphene we observe a gradual transition from the ballistic into the diffusive transport regime if the temperature is increased from 4.2 to about 50?K, although 2D Hall bars show a temperature-independent mobility. Thus, in 1D devices additional temperature-dependent scattering mechanisms play a pivotal role.     

Regulation of Anti-Apoptotic SOD2 and BIRC3 in Periodontal Cells and Tissues

The aim of the study was to clarify whether orthodontic forces and periodontitis interact with respect to the anti-apoptotic molecules superoxide dismutase 2 (SOD2) and baculoviral IAP repeat-containing protein 3 (BIRC3). SOD2, BIRC3, and the apoptotic markers caspases 3 (CASP3) and 9 (CASP9) were analyzed in gingiva from periodontally healthy and periodontitis subjects by real-time PCR and immunohistochemistry. SOD2 and BIRC3 were also studied in gingiva from rats with experimental periodontitis and/or orthodontic tooth movement. Additionally, SOD2 and BIRC3 levels were examined in human periodontal fibroblasts incubated with Fusobacterium nucleatum and/or subjected to mechanical forces. Gingiva from periodontitis patients showed significantly higher SOD2, BIRC3, CASP3, and CASP9 levels than periodontally healthy gingiva. SOD2 and BIRC3 expressions were also significantly increased in the gingiva from rats with experimental periodontitis, but the upregulation of both molecules was significantly diminished in the concomitant presence of orthodontic tooth movement. In vitro, SOD2 and BIRC3 levels were significantly increased by F. nucleatum, but this stimulatory effect was also significantly inhibited by mechanical forces. Our study suggests that SOD2 and BIRC3 are produced in periodontal infection as a protective mechanism against exaggerated apoptosis. In the concomitant presence of orthodontic forces, this protective anti-apoptotic mechanism may get lost.