Influence of protein and lipid concentration of the test lubricant on the wear of ultra high molecular weight polyethylene

To gain a better understanding of the ultra-high molecular weight polyethylene (UHMWPE) wear mechanism in the physiological environment, the effects of protein and lipid constituents of synovial fluid on the specific wear rate of UHMWPE were examined experimentally. The multidirectional sliding pin-on-plate wear tester was employed to simulate the simplified sliding condition of hip joint prostheses. Bovine serum γ-globulin and synthetic l--DPPC were used as model protein and lipid constituents of synovia, respectively. Results of the wear test indicated that the UHMWPE wear rate primarily depended on the protein concentration of the test lubricant. Lipids acted as a boundary lubricant and reduced polyethylene wear in the low protein lubricants. However, the polyethylene wear rate increased with increasing lipid concentrations if the protein concentration was within the physiological level. Increased interactions between protein and lipid molecules and lipid diffusion to polyethylene surface might be responsible for the increased wear.     

Perfect Blind-Channel Shortening for Multicarrier Systems

In multicarrier systems, when the order of a channel impulse response is larger than the length of the cyclic prefix (CP), there is a significant performance degradation due to interblock interference (IBI). This paper proposes a blind-channel shortening method in which the equalizer parameter vector is formed by the noise subspace of the received signal correlation matrix so that the output power is maximized. The proposed method can not only shorten the effective channel impulse response to within the CP length but also maximize the output signal-to-interference-and-noise ratio while eliminating the IBI. We point out that the performance depends on the choice of a decision delay and propose a simple method for determining the appropriate delay. We propose both a batch algorithm and an adaptive algorithm and show by simulation that they are superior to the conventional algorithms.     

Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.     

A Low-Supply-Voltage CMOS Sub-Bandgap Reference

A low-power (21 $muhbox{W}$ ) bandgap reference source that is operable from a nominal supply voltage of 1.4 V is described. The circuit provides an output voltage equal to the bandgap voltage having a low output resistance and allows resistive loading. It does not use resistors or operational amplifiers. Thus, the design is suitable for fabrication in any digital CMOS technology. The circuit uses a current conveyor and current mirrors to convert the proportional to absolute temperature voltage into a current using a MOSFET. The current is converted back to a voltage by using the functional inverse of the FET $v-i$ characteristics. This makes the voltage gain linear and temperature independent. The absence of back-gate bias is the reason for achieving the low supply voltage of operation. Simulation results using the transistor models for the 0.18-$mu$m TSMC process show that the voltage-variation over the temperature range 0 to 100 $^{circ} {hbox {C}}$ is $≪$1 mV.      

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Novel electro-optic properties of epitaxially grown (Pb, La)(Zr, Ti)O3 (PLZT) thin films derived by advanced sol–gel methods

Advanced sol–gel methods using a secondary solvent addition into (Pb, La)(Zr, Ti)O₃ (PLZT) sol–gel solution and a methanol pre-treatment of sapphire substrates are demonstrated. For the secondary solvent addition, the additive affected the crystallinity and electro-optic (EO) property of PLZT films and only methanol addition can improve them. In addition, the methanol pre-treatment is also appeared to be effective to improve film characteristics.

Through these optimizations, epitaxially grown PLZT thin films on r-cut sapphire are obtained and a high Pockels coefficient which is comparable to those of bulk PLZTs is achieved. It is believed that these PLZT thin films are applicable for integrated EO devices and open the door for the future data communication systems.     

Distributed Transmit Antenna Selection (DTAS) Under Performance or Energy Consumption Constraints

Motivated by the transmit antenna selection (TAS) concept, used in Multiple-Input-Multiple-Output systems, we argue for distributed transmit antenna selection (DTAS), which corresponds to a method of selecting a subset of available relays in cooperative diversity systems. Assuming amplify and forward relays, the proposed selection method represents a low-complexity tool for determining the optimum relaying set. Two optimization problems are studied: the error probability minimization subject to total energy consumption constraints, and the dual one, the total energy consumption minimization under error performance constraints. Numerical examples verify the advantage of the proposed method in adapting the number of relaying terminals to the desired performance-consumption tradeoff.     

An order-specific clustering algorithm for the determination of representative demand curves

Data clustering consists of a group of procedures used to collect similar entries or data points within a set into clusters. No existing clustering technique considers entries sequentially in time. In some cases, it is desirable to generate clusters that represent a segment of a time-ordered data set. For these purposes, an order-specific clustering algorithm is proposed. The proposed algorithm employs representative load curves to describe the clusters it generates. The capabilities of the order-specific clustering algorithm are demonstrated on a case study using electricity demand data for the province of Ontario, Canada. Two different applications of the clustering algorithm on this data set are given to demonstrate the effect of error threshold values on the formation of clusters. An analysis of the error for each of these clustering applications is presented.     

Sp3/sp2 character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

Hot filament and microwave plasma CVD micro- nanocrystalline diamond films are analysed by visible and ultra-violet excitation source Raman spectroscopy. The sample grain size varies from 20 nm to 2 μm. The hydrogen concentration in samples is measured by SIMS and compared to the grain size, and to the ratio of sp² carbon bonds determined by Raman spectroscopy from the 1332 cm^− 1 diamond peak and the sp² 1550 cm^− 1 G band. Hydrogen concentration appears to be proportional to the sp² bonds ratio. The 3000 cm^− 1 CH_x stretching mode band intensity observed on the Raman spectra is decreasing with the G band intensity. Thermal annealing modifies the sp² phase structure and concentration, as hydrogen outdiffuses.