Erbium-doped silicon and porous silicon for optoelectronics

Silicon forms the backbone of the microelectronics industry, and possibly, of the optoelectronics industry, hitherto dominated by III/V materials. One of the remaining goals is to build an optical source in silicon. Erbium exhibits luminescent 1.54 μm intra-4f transitions in both silicon and porous silicon. This paper reviews the work which has been carried out in this field and discusses some possible additional applications of erbium-doped silicon in optoelectronics, such as a novel on-chip temperature sensor.     

Fuzzy inference and fuzzy inference processor

Fuzzy inference, a data processing method based on the fuzzy theory that has found wide use in the control field, is reviewed. Consumer electronics, which accounts for most current applications of this concept, does not require very high speeds. Although software running on a conventional microprocessor can perform these inferences, high-speed control applications require much greater speeds. A fuzzy inference date processor that operates at 200000 fuzzy logic inferences per second and features 12-b input and 16-b output resolution is described     

Vector algorithm for Reed-Muller expansions

A novel vector algorithm for Reed-Muller (RM) expansions is proposed which can save as many as a factor of 2^n-1 memory elements compared with previous matrix algorithms     

Numerical investigation of nitriding of refractory metals (with account of the phase constitution diagrams for metal-gas systems)

A mathematical model of dissolution of gas in a metal is suggested with account of phase formation in accordance with the phase constitution diagram (PCD). The stage-by-stage saturation process to the final product formation is shown for an individual particle, through which a reaction wave passes, depending on the diffusion permeability of the metal and solubility conditions that obey Sieverts's law. The effect of the filtration supply of the oxidant to the reaction zone and the process exothermicity on the course of the process is shown.Institute of Structural Macrokinetics, Russian Academy of Sciences, Chernogolovka, Russia. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 65, No. 4, pp. 447–450, October, 1993.     

A Collection of Papers and Memoirs Celebrating the Contribution of Rod Burstall to Advances in Computer Science

Formal Aspects of Computing are dedicated to Professor Rod Burstall, and, as a collection of papers, memoirs and incidental pieces, form a Festschrift for Rod. The contributions are made by some of the many who know Rod and have been in uenced by him. The research papers included here represent some of the areas in which Rod has been active, and the editors thank their colleagues for agreeing to contribute to this Festschrift.     

Far-infrared pump-probe measurement of the lifetime of the 2p−1 shallow donor level in n-GaAs

The low temperature lifetime of electrons excited in the 2p^?1 donor level of n-GaAs has been studied in a far-infrared pump-probe experiment. The measurement has been carried out using a pulsed far-infrared molecular gas laser working at a wavelength of 292µm, with the sample in a magnetic field of 5.1 T, resonant with the 1s_o?2p^?1 transition. Two FIR pulses are sliced from one FIR-laser pulse by means of optical switching techniques using two Q-switched Nd:YAG lasers. The first pulse is used to saturate the transition, while the second pulse probes the return of the population in the excited state towards thermal equilibrium as a function of the time delay after the excitation pulse. The value of 350±50 ns found for the lifetime falls in line with CW saturation results on materials with other doping concentrations.     

Measurements of distribution of self-bias potential on an RF-plane electrode in plasma etching devices

The self-bias potential (V_dc) induced on an RF-powdered electrode (153 mm Ø) in a plasma is measured using electrical probes which are buried in, de-insulated from, and RF-connected to the electrode. The configuration of the probes allows to study the distribution of V_dc discretely on the electrode. The potential is homogeneous in the absence of external magnetic field. In the presence of a homogeneous magnetic field parallel to the electrode, it is reduced and a monotonous gradient takes place in its distribution due to the plasma shift induced by E × B drift. When the magnetic field is rotated along the axis of the RF-electrode at a frequency less than 50 Hz, the distribution, which is almost identical to the one in a static field, rotates with the magnetic field. On the coordinate system rotating with the magnetic field, the probes are regarded to be rotating. The potential distribution is obtained as a continuous function of the azimuthal angle. Thus the rotation of the field provides information for the experimental interpolation.     

The detection of the onset of electrode-electrolyte interfaceimpedance nonlinearity: a theoretical study

The equivalent series resistance and reactance of the electrode-electrolyte interface impedance have both been used to detect the onset of signal amplitude induced nonlinearity. Using a theoretical model, it is shown that the choice of the most sensitive indicator depends on the phase angle of the “polarization” impedance and on the applied frequency     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors