Fractoemission from Lead Zirconate-Titanate

We present measurements of the electron, positive ion, and photon emission accompanying the fracture in vacuum of poly-crystalline 95/5 lead zirconate-titanate. The intensities of the charged-particle components of this fractoemission are shown to depend strongly on the direction (relative to the direction of fracture) and magnitude of polarization. The most intense emission is observed when the fracture surfaces are perpendicular to the polarization direction. The emission intensity increases monotonically with polarization. These results are interpreted in terms of a model involving charge separation on the fracture surfaces leading to a microdischarge during fracture. Implications to the interpretation of triboluminesence effects are discussed.     

Effect of grain boundaries on isothermal solidification during transient liquid phase brazing

The influence of liquid penetration at grain boundary regions on the rate of advance of the solid-liquid interface during isothermal solidification of transient liquid phase (TLP) brazed nickel joints has been examined. The test samples used in this study were Ohno-cast nickel with a grain size of >4 mm and a fine-grained nickel with a grain size of around 40 μm. Both Ni-base materials had the same chemical composition. The rate of isothermal solidification was greater when fine-grained nickel was employed during TLP brazing using Ni-11 wt pct P filler metal at 1200 °C. Liquid penetration at grain boundaries accelerates the isothermal solidification process by increasing the effective solid-liquid interfacial area and increasing the rate of solute diffusion into the base material. An analysis of electron channeling patterns has confirmed that random high-angle boundaries have a greater influence on the rate of isothermal solidification than ordered boundaries including small-angle or twin boundaries. Formerly Visiting Scientist, Department of Metallurgy and Materials Science, University of Toronto. Formerly Postdoctoral Fellow, Department of Metallurgy and Materials Science, University of Toronto     

Integration of prior knowledge of measurement noise in kernel density classification

Samples can be measured with different precisions and reliabilities in different experiments, or even within the same experiment. These varying levels of measurement noise may deteriorate the performance of a pattern recognition system, if not treated with care. Here we seek to investigate the benefit of incorporating prior knowledge about measurement noise into system construction. We propose a kernel density classifier which integrates such prior knowledge. Instead of using an identical kernel for each sample, we transform the prior knowledge into a distinct kernel for each sample. The integration procedure is straightforward and easy to interpret. In addition, we show how to estimate the diverse measurement noise levels in a real world dataset. Compared to the basic methods, the new kernel density classifier can give a significantly better classification performance. As expected, this improvement is more obvious for small sample size datasets and large number of features.     

Perfect Blind-Channel Shortening for Multicarrier Systems

In multicarrier systems, when the order of a channel impulse response is larger than the length of the cyclic prefix (CP), there is a significant performance degradation due to interblock interference (IBI). This paper proposes a blind-channel shortening method in which the equalizer parameter vector is formed by the noise subspace of the received signal correlation matrix so that the output power is maximized. The proposed method can not only shorten the effective channel impulse response to within the CP length but also maximize the output signal-to-interference-and-noise ratio while eliminating the IBI. We point out that the performance depends on the choice of a decision delay and propose a simple method for determining the appropriate delay. We propose both a batch algorithm and an adaptive algorithm and show by simulation that they are superior to the conventional algorithms.     

Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.     

A Low-Supply-Voltage CMOS Sub-Bandgap Reference

A low-power (21 $muhbox{W}$ ) bandgap reference source that is operable from a nominal supply voltage of 1.4 V is described. The circuit provides an output voltage equal to the bandgap voltage having a low output resistance and allows resistive loading. It does not use resistors or operational amplifiers. Thus, the design is suitable for fabrication in any digital CMOS technology. The circuit uses a current conveyor and current mirrors to convert the proportional to absolute temperature voltage into a current using a MOSFET. The current is converted back to a voltage by using the functional inverse of the FET $v-i$ characteristics. This makes the voltage gain linear and temperature independent. The absence of back-gate bias is the reason for achieving the low supply voltage of operation. Simulation results using the transistor models for the 0.18-$mu$m TSMC process show that the voltage-variation over the temperature range 0 to 100 $^{circ} {hbox {C}}$ is $≪$1 mV.