Security issues for downloaded code in mobile phones

'Software defined radio' (SDR) is a technology that will appear in future generations of mobile phones, i.e. following the third-generation mobile phone technology that is currently being defined and developed. Early versions of 'pragmatic' SDR will allow the terminal to be reconfigured at any level of its protocol stack. Ultimately, the 'pure' SDR technology will allow a mobile phone or terminal to have its air interface software configured or reconfigured by other software (or software parameters) that have been downloaded to the terminal, e.g. over the air, or from a remote server via the Internet and one's personal computer (PC). A number of security issues arise with downloaded code that implements the air interface functions, and these may not be obvious simply from looking at the way PC software is updated on-line today. This paper starts with an outline of the code that allows a mobile phone to operate over a particular air interface. This sets the baseline for a discussion of the security issues surrounding the change of this code from one that is fixed and downloaded once only, to code that is reconfigurable during the life of a product.     

A distribution function for double-bit upsets

It is suggested that the chord length distribution method could be useful for predicting double-bit upset rates in certain circumstances. A chord length distribution function for simultaneous path lengths in two parallelepipeds, applicable to a unidirectional flux, is derived. A proof of the system is outlined for the case under consideration     

Power system analysis using space-vector transformation

In this paper, the space-vector transformation used in machine vector control is applied to power system analysis. The proposed method is used to model electric machines, power electronic converters, transformers, and transmission lines and to analyze power sources and loads with different connections (delta and wye). This method can also be applied to analyze steady-state (or transient phenomena) and unbalanced sources, including harmonics. Models obtained with this method are as simple as those of the per-phase approach. With the space-vector transformation, instantaneous active and reactive power concepts can be generalized, and new power system control strategies can be developed when power electronic converters are used. Steady-state, transient behavior, and harmonic analyses examples and applications are presented to illustrate the performance and advantages of the proposed method. This method can be extended to unbalanced systems (e.g., unsymmetric faults) using instantaneous symmetrical components in polyphase balanced circuits.     

Symmetry-breaking transitions in equilibrium shapes of coherent precipitates: Effect of elastic anisotropy and inhomogeneity

We examine the symmetry-breaking transitions in equilibrium shapes of coherent precipitates in two-dimensional (2-D) systems under a plane-strain condition with the principal misfit strain components ε* _xx and ε* _yy . For systems with cubic elastic moduli, we first show all the shape transitions associated with different values of t=ε* _yy /ε* _xx . We also characterize each of these transitions, by studying its dependence on elastic anisotropy and inhomogeneity. For systems with dilatational misfit (t=1) and those with pure shear misfit (t=−1), the transition is from an equiaxed shape to an elongated shape, resulting in a break in rotational symmetry. For systems with nondilatational misfit (−1<t<1; t ≠ 0), the transition involves a break in mirror symmetries normal to the x- and y-axes. The transition is continuous in all cases, except when 0<t<1. For systems which allow an invariant line (−1≤t<0), the critical size increases with an increase in the particle stiffness. However, for systems which do not allow an invariant line (0<t≤1), the critical size first decreases, reaches a minimum, and then starts increasing with increasing particle stiffness; moreover, the transition is also forbidden when the particle stiffness is greater than a critical value.     

Continuous phase quadrature phase shift keyed signaling techniquewith coding

A continuous phase quadrature phase shift keyed (CPQPSK) modulation technique is presented. This method utilizes a conventional QPSK modulator and a phase trajectory converter to approximate M=4, h=1/4 continuous phase signal and allows low cost, low complexity, and high rate (>1 Gbit/s) CPM modem implementation for bandwidth efficient transmission through nonlinear satellite channels. Using a communications analysis computer program it has been found that CPQPSK has 99 percent out-of-band power of 0.8R (MSK has 99 percent out-of-band power of 1.2 R where R is defined as bit rate), continuous phase trajectories, and nearly constant envelope amplitude. Simulation of realistic hardware designs indicate that the CPQPSK will require an Eb/No of 14 dB to achieve a bit error rate (BER) of 10^-6. Forward error correcting techniques using block codes with an overhead of 10 percent indicate that the Eb/No requirements can be reduced to 11.2 dB for 10^-6 BER     

Synthesis and characterisation of copolyesters from poly(ethylene terephthalate) and poly(hexamethylene terephthalate)

Copolyesters containing poly(ethylene terephthalate) and poly(hexamethylene terephthalate) (PHT) were prepared by a melt condensation reaction. The copolymers were characterised by infrared spectroscopy and intrinsic viscosity measurements. The density of the copolyesters decreased with increasing percentage of PHT segments in the backbone. Glass transition temperatures (T_g). melting points (T_m) and crystallisation temperatures (T_c) were determined by differential scanning calorimetry. An increase in the percentage of PHT resulted in decrease in T_g, T_m and T_c. The as-prepared copolyesters were crystalline in nature and no exotherm indicative of cold crystallisation was observed. The relative thermal stability of the polymers was evaluated by dynamic thermogravimetry in a nitrogen atmosphere. An increase in percentage of PHT resulted in a decrease in initial decomposition temperature. The rate of crystallisation of the copolymers was studied by small angle light scattering. An increase in percentage of PHT resulted in an increase in the rate of crystallisation.     

Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices     

Interactions of electron beams with surfaces of MgO crystals

The strong interaction of electrons with the flat surfaces of small crystals has been investigated by high resolution CTEM and STEM instruments. When cubic crystals of MgO smoke with edges 20–300 nm are oriented so that the ?001? or ?011? zone axis is parallel to the optical axis, then two kinds of external fringes are observed at (100) surfaces. One kind is parallel to the surface, having spacings up to 0.4 nm. These are caused by interference among the electron channelled along the surface. Fresnel-diffracted ones and the remnant of the incident beam. Fringes of the other kind, which appear as fine structure in the first kind of fringes, are perpendicular to the crystal edge. When an electron beam is parallel to the ?011? axis, the second kind of fringe, whose spacing is 0.3 nm corresponding to d₀₁₁, shows the difference of the surface potential between magnesium atoms and oxygen atoms. Selected area diffraction patterns and microdiffraction patterns also show the same periodicities as in the two kinds of fringes. Simulated images, using the scattering amplitudes for ions, are compared with observations.     

Effect of facet coatings on far fields of semiconductor lasers

A theoretical expression is derived for the far fields of semiconductor lasers with coated facets. It is shown that the far fields are different for uncoated, antireflection-coated and high-reflection-coated lasers. The correction factor for the far fields is shown to depend on the transmission coefficient of the facets.