Selective emitter using porous silicon for crystalline silicon solar cells

This study is devoted to the formation of high–low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125×125 cm. Porous and non-porous areas each share half of the whole silicon surface. H₃PO₄:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H₃PO₄ does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured emitter sheet resistances at the high- and low-level-doped regions were 30–35 and 97–474 Ω/□ respectively. A simple process for low- and high-level doping has been achieved by forming porous and porous-free silicon surface, in this study, which could be applied for solar cells selective emitter doping.     

Properties of excited xenon atoms in a plasma display panel

The luminance efficiency of a plasma display panel is directly related to the vacuum ultraviolet (VUV) light that is emitted from excited xenon (Xe) atoms and molecules. It is therefore necessary to investigate the properties of excited xenon atoms. This study presents experimental data associated with the behavior of excited xenon atoms in a PDP discharge cell and compares the data with the theoretical results obtained using an analytical model. The properties of excited xenon atoms in the discharge cells of a plasma display panel are investigated by measuring the excited atom density through the use of laser absorption spectroscopy. The density of the excited xenon atoms increases from zero, reaches its peak, and decreases with time in the discharge cells. The profile of the excited xenon atoms is also studied in terms of the xenon mole fraction. The typical density of the excited xenon atoms in the metastable state is on the order of 10¹³ atoms per cubic cm.     

Measurement of valence band structure in arbitrary dielectric films

A new way of measuring the band structure of various dielectric materials using the secondary electron emission from Auger neutralization of ions is introduced. The first example of this measurement scheme is the magnesium oxide (MgO) films with respect to the application of the films in the display industries. The density of state in the valence bands of MgO film and MgO film with a functional layer (FL) deposited over a dielectric surface reveals that the density peak of film with a FL is considerably less than that of film, thereby indicating a better performance of MgO film with functional layer in display devices. The second example of the measurement is the boron-zinc oxide (BZO) films with respect to the application of the films to the development of solar cells. The measurement of density of state in BZO film suggests that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film. Secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials.     

Finite element method simulation of the molding process for thermal nano-imprint lithography

We made a numerical study on the deformation of a viscoelastic polymethyl methacrylene (PMMA) resist when a rigid SiO2 stamp with a rectangular line pattern is imprinted into the PMMA resist for thermal nano-imprint lithography (NIL). The stress distribution in the polymer resist during the molding process is calculated by a finite element method (FEM). Our simulation results reveal that the asymmetric von Mises stress is distributed over the polymer around the external line, which seems to be due to the squeezing flow under the flat space. The stress seems to be concentrated at the sidewall close to the centerline of the whole structure. Our simulation also reveals that a micro gap is formed between the replicated structure and the outer wall of the mold.     

Highly stable barium zirconate supported nickel oxide catalyst for dry reforming of methane: From powders toward shaped catalysts

We report the barium zirconate supported NiO_x catalysts (NiO_x/BZO) for dry reforming of methane and feasibility test for their industrial application by using temperature-regulated chemical vapor deposition together with extrusion. Nickel oxide nanoparticles are well deposited and dispersed on BZO powders as well as structures in a gear form, showing high catalytic activity and extraordinary stability even at relatively lower temperature and higher space velocity. The NiO_x/BZO catalyst are highly coke resistant for 50 h operation with almost negligible agglomeration of NiO_x nanoparticles. Judging from XPS and high ion conducting properties of BZO supports, the –OH or –O species are expected to play an important role in promoting the self-decoking of surface carbon species to form CO and CO_2.     

Intergranular corrosion of Ti-stabilized 11 wt% Cr ferritic stainless steel for automotive exhaust systems

Intergranular corrosion (IGC) of type 409L ferritic stainless steel (FSS) was investigated. A free-exposure corrosion and a double loop electrochemical potentiokinetic reactivation (DL-EPR) tests were conducted to examine IGC of the FSS. IGC occurred in the specimens aged at the temperature range of 400–600 °C that has the sensitization nose located around 600 °C. The critical I_r/I_a value was determined to be about 0.03 above which IGC occurred. Based on the analysis of the intergranular precipitates by an energy dispersive spectroscopy (EDS) and a transmission electron microscopy (TEM), IGC was induced by the Cr depletion zone formation due to Cr segregation around intergranular TiC.     

Electrochemically oxidized carbon anode in direct l-ascorbic acid fuel cells

The activity of electrochemically oxidized carbon electrode was investigated in the operation of a direct l-ascorbic acid fuel cell anode. The surface oxygen species placed on electrochemically oxidized carbon electrode were analyzed by X-ray photoelectron spectroscopy and cyclic voltammetry. The electrochemical oxidation process of carbon electrode can facilitate the pore-filling process (i.e., wetting) of the electrolyte into the microstructure of the carbon electrode by increasing the number of more polar functional groups on the electrode surface. The electrochemically oxidized carbon electrode exhibited significantly enhanced electro-catalytic oxidation activity of l-ascorbic acid compared to an unmodified carbon electrode. Moreover, the simplified electrode structure using carbon paper without an additional powder-based precious catalyst layer is very favorable in creating percolation network and generates power density of 18 mW/cm² at 60 °C.     

Kinetic Monte Carlo study on the suppression of boron transient enhanced diffusion with carbon pre-implant

We report our kinetic Monte Carlo (kMC) study of the effect of carbon co-implantation on the pre-amorphization implant (PAI) process. We employed the BCA (binary collision approximation) approach for the acquisition of the initial as-implanted dopant profile and the kMC method for the simulation of the diffusion process during the annealing. The simulation results implied that carbon co-implantation suppress boron diffusion due to recombination with interstitials. Also, we could compare boron diffusion with carbon diffusion by calculating the reaction of carbon atoms with interstitials, and we found that boron diffusion was affected by the carbon co-implantation energy by enhancing the trapping of interstitials between boron atoms and interstitials. Our KMC simulation implies that the probability of boron's encounterance with interstitial is reduced due to the carbon trapping between boron and an interstitial and that the effectiveness of co-implanted carbon as a interstitial trap is maximized at an implantation energy of 3 keV.     

Association of coronary artery calcium score and vascular dysfunction in long‐term hemodialysis patients

Long‐term hemodialysis patients are prone to an exceptionally high burden of cardiovascular disease and mortality. The novel temperature‐based technology of digital thermal monitoring (DTM) of vascular reactivity appears associated with the severity of coronary artery disease in asymptomatic population. We hypothesized that in hemodialysis patients, the DTM and coronary artery calcium (CAC) score have a gradient association that follows that of subjects without kidney disease. We examined the cross‐sectional DTM‐CAC associations in a group of long‐term hemodialysis patients, and their 1:1 matched normal counterpart. Area under the curve for temperature (TMP‐AUC), the surrogate of the DTM index of vascular function, was assessed after a 5‐minute arm‐cuff reactive hyperemia test. Coronary calcium score was measured via electron beam computed tomography or multidetector computed tomography scan. We studied 105 randomly recruited hemodialysis patients (age: 58 ± 13 years, 47% men) and 105 age‐ and gender‐matched controls. In hemodialysis patients vs. controls, TMP‐AUC was significantly worse (114 ± 72 vs. 143 ± 80, P = 0.001) and CAC score was higher (525 ± 425 vs. 240 ± 332, P < 0.001). Hemodialysis patients were 14 times more likely to have CAC score >1000 as compared with controls. After adjustment for known confounders, the relative risk for case vs. control for each standard deviation decrease in TMP‐AUC was 1.46 (95% confidence interval: 1.12–1.93, P = 0.007). Vascular reactivity measured via the novel DTM technology is incrementally worse across CAC scores in hemodialysis patients, in whom both measures are even worse than their age‐ and gender‐matched controls. The DTM technology may offer a convenient and radiation‐free approach to risk‐stratify hemodialysis patients.