Treatment capability of an up-flow anammox column reactor using polyethylene sponge strips as biomass carrier

The feasibility of applying a polyethylene (PE) sponge as a biomass carrier in an anaerobic ammonium oxidation (anammox) reactor and its nitrogen removal performance were also investigated. Experiments were carried out in an up-flow column reactor with synthetic inorganic wastewater. Experimental results indicate that reactor containing PE sponge biomass carriers showed a high nitrogen removal capability and exhibited stable performance. In addition, the reactor with 8 strips PE sponge as biomass carrier exhibited greater adaptation capacity compared to that with 6 strips and could achieve a high TN removal rate within a very short period. The ratio of NO₂-N removal and NO₃-N production to NH₄-N removal for the reactor was 1.26:0.21. Furthermore, to investigate the bacterial composition of the mature community, 16S rRNA sequences were amplified by PCR and analyses were conducted using DNA databases. Results showed that a new kind of anammox microorganism (Kumadai-1) was the dominant species in the reactor when using PE sponge as a biomass carrier.     

Optical properties of end-sealed hollow fibers

We propose sealing techniques for medical hollow fibers to protect the inner surface of fibers from debris or water that scatters from targets. First, hollow fibers are sealed with a film of polymer that is easily formed by use of a dipping technique. The transmission loss of 20-microm-thick sealing film was 0.2 dB for Er:YAG laser light, and the maximum energy that is available for the film was 180 mJ. Second, a sealed glass cap was applied to the output end of hollow fiber. The silica-glass cap with a wall thickness of 400 microm shows a transmission loss of 0.5 dB and was not damaged by radiation of 400-mJ energy pulses.     

Characterization of the microbial community in an anaerobic ammonium-oxidizing biofilm cultured on a nonwoven biomass carrier

The enrichment and characterization of anaerobic ammonium-oxidizing biofilm cultures are ongoing in our laboratories. Biomass, with a predominately red color, demonstrating simultaneous removal of ammonium and nitrite under autotrophic and anoxic conditions, which is characteristic of anaerobic ammonium-oxidizing planctomycetes, was enriched and maintained for an extended period on a polyester nonwoven carrier. To investigate the bacterial composition of the mature biofilm community, 16S rDNA sequences were amplified by PCR and comparative analyses using DNA databases were conducted. Only one sequence had a notable similarity (92.2%) to that of the first discovered anaerobic ammonium-oxidizing planctomycete and lesser, yet significant, similarities to the 16S rDNA sequences of other recently reported anaerobic ammonium-oxidizing strains. The newly discovered strain (designated KSU-1) reported here was dominant among detectable members of the biofilm community. By fluorescence imaging, KSU-1 was shown to form spherical clusters wrapped in a thin layer of Zoogloea sp. Possible interactions and interdependencies of these two species are discussed with regard to the putative unculturability of the anaerobic ammonium-oxidizing planctomycetes.     

Flexible microelectronics: New application for thin‐film transistors in fingerprint sensors

Abstract— Thin‐film transistors (TFTs) are field‐effect transistors that can be used to create large‐scale‐integrated (LSI) circuits. The combination of high‐performance TFTs and transfer technology of the TFTs has the potential to foster the rise of a new flexible microelectronics industry. This paper discusses the current status of flexible microelectronics, using a TFT fingerprint sensor (FPS) as an example. Technology used in active‐matrix displays can easily be applied to the TFT FPS. TFT technology should not be confined to the display industry; its use should be expanded into the semiconductor industry. With the result presented in this paper, we declare a new era of flexible microelectronics open.     

Highly reliable copper dual-damascene interconnects with self-formed MnSi/sub x/O/sub y/ barrier Layer

Copper (Cu) dual-damascene interconnects with a self-formed MnSi/sub x/O/sub y/ barrier layer were successfully fabricated. Transmission electron microscopy shows that approximately 2-nm thick and continuous MnSi/sub x/O/sub y/ layer was formed at the interface of Cu and dielectric SiO/sub 2/, and that no barrier was formed at the via bottom because no oxygen was at the via bottom during annealing. No leakage-current increase was observed, and electron energy loss analysis shows that no Cu was in SiO/sub 2/, suggesting that MnSi/sub x/O/sub y/ layer has sufficient barrier properties for Cu, and that the concept of self-forming barrier process works in Cu dual-damascene interconnects. Via chain yield of more than 90% and 50% reduction in via resistance were obtained as compared with physical vapor deposited tantalum barrier, because there is no barrier at the via bottom. In addition, no failure in the stress-induced voiding measurement was found even after a 1600-h testing. No failure in electromigration (EM) testing was found, as the electron flow is from the lower level interconnects through via up to upper level interconnects even after 1000-h testing. At least, four times EM lifetime improvement was obtained in the case of electron flow from upper level interconnect through via down to lower level interconnects. Significant EM lifetime improvement is due to no flux divergence site at the via bottom, resulting from there being no bottom barrier at the via.     

Plant zero structure and further order reduction of a singular H∞ controller

A new class of reduced‐order controllers is obtained for the H_∞ problem. The reduced‐order controller does not compromise the performance attained by the full‐order controller. Algorithms for deriving reduced‐order H_∞ controllers are presented in both continuous and discrete time. The reduction in order is related to unstable transmission zeros of the subsystem from disturbance inputs to measurement outputs. In the case where the subsystem has no infinite zeros, the resulting order of the H_∞ controller is lower than that of the existing reduced‐order H_∞ controller designs which are based on reduced‐order observer design. Furthermore, the mechanism of the controller order reduction is analysed on the basis of the two‐Riccati equation approach. The structure of the reduced‐order H_∞ controller is investigated. Copyright © 2002 John Wiley & Sons, Ltd.     

A pneumatically actuated full in-channel microvalve with MOSFET-like function in fluid channel networks

A pneumatically actuated silicon microvalve applicable to integrated microfluidic systems is presented. All the ports of this microvalve are in-channel, and connectable to any surface fluid channels in microfluidic systems. This microvalve controls fluid flow by means of the controlled gap between glass and silicon diaphragm actuated by a control pressure. In addition, the diaphragm is also deformed by the outlet pressure of the microvalve. Due to the feature, this microvalve shows saturation of flow rate like MOSFETs operated at saturation region. The fabricated microvalve device was evaluated focusing on analogous relationship between MOSFET and the microvalve. Fluids such as air and DI-water were well controlled by the control pressure. Fluid starts to flow in the microvalve when the control pressure exceeds its "threshold pressure." Hysteresis due to sticking of diaphragm was not observed in the characteristics. Air flow rate of the microvalve was gradually saturated with the increasing of the outlet pressure as expected. Through the evaluation, analogous relationship between this microvalve and MOSFET has been experimentally demonstrated.     

Design of a spotsize-converter-integrated laser diode (SS-LD) witha lateral taper, thin-film core and ridge in the 1.3-μm-wavelengthregion based on the 3-D BPM

In order to develop spotsize-converter-integrated laser diodes (SS-LDs) with high efficiency and large-misalignment tolerances in the 13-μm-wavelength region, spotsize converters (SSCs), which consist of lateral taper, thin-film core and ridge, are investigated employing the three-dimensional (3-D) semivectorial finite-difference beam propagation method (FD-BPM) with nonequidistant discretization. The sum of the spot-conversion loss and coupling loss between the laser diode (LD) eigenmode and the single-mode fiber (SMF) eigenmode are calculated for various structural parameters. Small loss of around 1.5 dB can be achieved by introducing a nonlinear taper. The fabrication tolerances for the SSCs are also clarified. The calculated results agree well with the results for actually fabricated SS-LD's. It is also shown that the radiation loss and coupling characteristics of the SS-LDs with a buried thin-film core structure can be improved using a nonlinear taper     

Influence of Y2O3 distribution on the rate of tetragonal to monoclinic phase transformation of yttria-stabilized zirconia during hydrothermal aging

Tetragonal to monoclinic phase transformation of yttria-stabilized zirconia, namely plasma-sprayed coatings and sintered bodies containing 4–8 mass % Y₂O₃ during hydrothermal aging was investigated with respect to Y₂O₃ distribution using 1 m area from electron probe microanalysis (EPMA) and 20 nm area from transmission electron microscopy (TEM) analysis. Phase transformation at 473 K was prevented only in plasma-sprayed coatings having more than 6.7 mass % Y₂O₃ in 20 nm microscopic area. Furthermore, it was confirmed influence of Y₂O₃ distribution on the rate constants of this phase transformation was observed at 368 K.