Dark-field transmission electron microscopy for a tilt series of ordering alloys: toward electron tomography

Here we show a technique to obtain a tilt series of dark-field (DF) transmission electron microscopy (TEM) images in ordering alloys for tomographic three-dimensional (3D) observations. A tilt series of DF TEM images of D1a-ordered Ni4Mo precipitates in a Ni-Mo alloy was successfully obtained by adjusting a diffraction condition for a superlattice reflection from the Ni4Mo precipitates. Since the superlattice reflection usually has a long extinction distance, dynamic diffraction effects such as thickness fringes can be suppressed to some extent with precise realignment of the diffraction condition. By using the tilt series of the DF TEM images, we attempted a computed TEM tomography to visualize 3D shapes and positions of the precipitates.     

Advances in Digital Front-End and Software RF Processing:Part I

One of the biggest technology trends in wirelessbroadband, radar, sonar, and broadcasting systems issoftware radio frequency processing and digitalfront-end. This trend encompasses a broad range oftopics, from circuit design and signal processing to systemintegration. It includes digital up-conversion (DUC) and     

用电子束曝光方法在优化设计的绝缘体上硅脊状波导上实现布拉格光栅的制作和评价

报道了一种用电子束曝光的方法在绝缘体上硅的脊状光波导上制做布拉格光栅的技术.考虑到实际的光子学集成的应用,讨论了这个带有布拉格光栅的脊状光波导的优化设计,给出了该布拉格光栅的测试和理论模拟结果.通过薄化绝缘体上硅的波导层的厚度和光栅的深腐蚀加工,获得了高达30cm-1的光栅耦合系数.     

Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate,bottom-contact organic thin-film transistors with Schottky contact

Channel length dependence of field-effect mobility and source/drain parasitic resistance in pentacene thin-film transistors with a bottom-gate, bottom-contact configuration was investigated. Schottky barrier effect such as nonlinear behaviors in transistor output characteristics appeared and became more prominent for shorter channel length less than 10 μm, raising some concerns for a simple utilization of conventional parameter extraction methods. Therefore the gate-voltage-dependent hole mobility and the source/drain parasitic resistance in the pentacene transistors were evaluated with the aid of device simulation accounting for Schottky contact with a thermionic field emission model. The hole mobility in the channel region shows smaller values with shorter channel length even after removing the influence of Schottky barrier, suggesting that some disordered semiconductor layers with low carrier mobility exist near the contact electrode. This experimental data analysis with the simulation enables us to discuss and understand in detail the operation mechanism of bottom-gate, bottom-contact transistors by considering properly each process of charge carrier injection, carrier flow near the contact region, and actual channel transport.     

Microstructures of Annealed TiNiSn-Based Alloy Ribbons

The thermoelectric half-Heusler compounds Ti _x NiSn_0.998Sb_0.002 (x = 1.0 to 1.2) and Ti _y Zr_0.25Hf_0.25NiSn_0.998Sb_0.002 (y = 0.5 to 0.65) with nonstoichiometric nominal compositions were prepared by spin-casting and subsequent annealing at 1073 K for 24 h. The dimensionless figure of merit ZT at room temperature was maximized at x = 1.1 and y = 0.6 in Ti-rich compounds through an increase in absolute Seebeck coefficients despite a decrease in electrical conductivities. ZT reached 0.07 at x = 1.1 and 0.14 at y = 0.6. In powder x-ray diffraction analysis, minor phases of β-Sn, TiNi, Ti₂Sn, and Ti₅Sn₃ were observed in addition to a major phase of half-Heusler. The quantity of the minor phases was minimized at x = 1.1 and y = 0.55, where the absolute Seebeck coefficients are maximized. In transmission electron microscopic (TEM) analysis of Ti_0.55Zr_0.25Hf_0.25NiSn_0.998Sb_0.002, crystal grains of the half-Heusler phase, from several hundred nanometers to several micrometers in size, were observed. TEM energy-dispersive spectroscopy measurements indicated that fluctuations of Ti, Zr, and Hf compositions within the Ti-site in the half-Heusler phase may occur. Thermoelectric properties were improved at x = 1.1 and y = 0.6 rather than at the stoichiometric compositions of x = 1.0 and y = 0.5 due to minimization of the precipitate quantities.     

An AlGaAs/GaAs short-cavity laser and its monolithic integration using microcleaved facets (MCF) process

This paper describes the microcleaved facets (MCF) process developed for AlGaAs/GaAs laser fabrication which can avoid the previous substrate cleavage and therefore be applicable to preparing both discrete short-cavity lasers and optoelectronic integrated circuits (OEIC's). An AlGaAs/GaAs double heterostructure ridge-waveguide laser with an extremely short cavity length, namely 20 μm, was first realized by this process. A threshold current as low as 20 mA and a single longitudinal mode lasing were achieved. The usefulness of this process for integrating a laser and a monitoring photodiode on a GaAs substrate is also demonstrated.     

Chemical and Physical Sensing by Organic Field‐Effect Transistors and Related Devices

Organic semiconductor films are susceptible to noncovalent interactions, trapping and doping, photoexcitation, and dimensional deformation. While these effects can be detrimental to the performance of conventional circuits, they can be harnessed, especially in field‐effect architectures, to detect chemical and physical stimuli. This Review summarizes recent advances in the use of organic electronic materials for the detection of environmental chemicals, pressure, and light. The material features that are responsible for the transduction of the input signals to electronic information are discussed in detail.     

Flexible organic transistors and circuits with extreme bending stability

Flexible electronic circuits are an essential prerequisite for the development of rollable displays, conformable sensors, biodegradable electronics and other applications with unconventional form factors. The smallest radius into which a circuit can be bent is typically several millimetres, limited by strain-induced damage to the active circuit elements. Bending-induced damage can be avoided by placing the circuit elements on rigid islands connected by stretchable wires, but the presence of rigid areas within the substrate plane limits the bending radius. Here we demonstrate organic transistors and complementary circuits that continue to operate without degradation while being folded into a radius of 100 μm. This enormous flexibility and bending stability is enabled by a very thin plastic substrate (12.5 μm), an atomically smooth planarization coating and a hybrid encapsulation stack that places the transistors in the neutral strain position. We demonstrate a potential application as a catheter with a sheet of transistors and sensors wrapped around it that enables the spatially resolved measurement of physical or chemical properties inside long, narrow tubes.     

Quantum States of Helium Atoms Confined in Nanocage in Na-Y Zeolite

We have studied the heat capacities of heliums adsorbed in Na-Y zeolite down to 70 mK. The Y-type zeolite has void cages 1.3 nm in diameter connected through narrow apertures 0.8 nm in diameter. In the nanopores at low temperatures, the second-layer He adatoms can be confined in each cage by the first solid layer. In the quantum fluid region above the second-layer promotion, where the heat capacities show qualitative differences between ⁴He and ³He, the heat capacities of ³He adatoms and the thermal relaxation processes show large and non-monotonic changes when one ³He atom is added in each cage. These results strongly suggest that the quantum fluid formed in Na-Y zeolite is not fluid film spread over the entire substrate but quantum clusters confined in each cage.