Explanation of impact load curve in ball impact test in relation to thermal aging

Solder joints are required to have high impact strength for use in portable electronic products. To make solder joints with high impact strength, qualitative evaluation methods of impact strength are required. Ball impact tests have been widely adopted in evaluating the impact strength of solder joints because of their easy implementation. Impact load curves obtained from ball impact tests are used as an evaluation indicator of impact strength of solder joint. However, a relation between fracture behavior and impact load curve has not yet been clarified, and an explanation of the impact load curve has not yet been provided in detail. In addition to this, detailed study about the relation between IMC layer thickness and impact strength has not been performed, although the IMC layer thickness formed at the interface would significantly affect the impact strength of the solder joint. This study aimed to explain the impact load curve in the ball impact test and to reveal the effect of the IMC layer thickness on the impact strength of the solder joint. Sn–3.0Ag–0.5Cu solder was reflowed on an electroless Ni–P plated Cu substrate (Ni–P), and a ball impact test was then carried out to evaluate the impact strength. This study found that the ball impact test is effective to evaluate the interfacial strength of solder joints. In the impact load curve, it is estimated that the solder bump keeps deforming until the interfacial crack initiates (maximum load), and the interfacial crack initiates after the maximum load and propagates along the interface between the solder and Ni–P. The suitable evaluation of impact strength became possible by measuring the correspondence relation between the deformation distance of the solder bump after fracture and the energy until maximum load and the relation between the area fraction of the residual solder on the fractured pad and the energy after maximum load. And, it is proved that the impact strength decreased with increasing aging time because the growth of the IMC layer remarkably degraded the interfacial strength of the solder joint.     

Three replacement models with two kinds of damage

This paper proposes three replacement policies for a modified cumulative damage model. An item receives shocks and suffers two kinds of damage: one is produced by shocks and the other increases with time at constant rate a. It fails only when the total damage exceeds a failure level K at some shock and is replaced before failure at time T, at shock N, or at damage k. The expected cost rates of three replacement policies are obtained. When shocks occur in a Poisson process, optimal T^*, N^* and k^* which minimize them are computed numerically. Finally, two extended cases where a is a function of time and K is a random variable are also considered.     

Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.     

Design strategy and development of spherical silicon solar cell with semi-concentration reflector system

Structural and economical merits of a spherical silicon solar cell with semi-concentration reflector system have been discussed. The roles of the reflector system have been clarified; the reflector improves short-circuit current density and also open-circuit voltage by 4–6 times concentration to make a light irradiation area comparable to a p–n junction area. We have theoretically demonstrated that the spherical Si solar cell with semi-concentration reflector system can realize a performance comparable to that of conventional Si solar cells, with less amount of silicon material use.     

An evaluation method of the fluctuation characteristics of photovoltaic systems by using frequency analysis

Short-time fluctuations in solar irradiance will become an important issue with regard to future embedded photovoltaic (PV) systems. However, when PV systems are intensively installed, fluctuation of total output in clustered PV systems is not remarkable because there is the smoothing effect of irradiance in certain areas. In this paper, a new estimation method of irradiance fluctuation, which is based on the combination of the Fourier transform and the wavelet transform methods, is described.     

Photovoltaic characteristics of phosphorus-doped amorphous carbon films grown by r.f. plasma-enhanced CVD

The phosphorus-doped amorphous carbon (n-C:P) films were grown by r.f. power-assisted plasma-enhanced chemical vapor deposition at room temperature using solid phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density (J_sc), open circuit current voltage (V_oc), fill factor (FF) and conversion efficiency (η) along with the spectral response are reported for the fabricated carbon based n-C:P/p-Si heterojunction solar cell were measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum of V_oc and J_sc for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively for the n-C:P/p-Si cell grown at lower r.f. power of 100 W. The highest η and FF were found to be approximately 0.84% and 49%, respectively. We have observed the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

Photoactive Electro-Controlled Visual Perception Memory for Emulating Synaptic Metaplasticity and Hebbian Learning

In bionic technology, it has become an innovative process imitating the functionality and structuralism of human biological systems to exploit advanced artificial intelligent machines. Bionics plays a significant role in environmental protection, especially for its low energy loss. By fusing the concept of receptor-like sensing component and synapse-like memory, the photoactive electro-controlled optical sensory memory (PE-SM) is proposed and realized in a single device, which endows a simple methodology of reducing power consumption by photoactive electro-control. The PE-SM is the system built with the stacked atomically thick materials, in which rhenium diselenide serves as a robust photosensor, hexagonal boron nitride serves as a tunneling dielectric, and graphene serves as a charge-storage layer. With the features of the PE-SM, it performs synaptic metaplasticities under optical spikes. In addition, a simulated spiking neural network composed of 24 × 24 PE-SMs is further presented in an unsupervised machine learning environment, performing image recognition via the Hebbian rule. The PE-SM not only improves the neuromorphic computing efficiency but also simplifies the circuit-size structure. Eventually, the concept of photoactive electro-control can extend to other photosensitive 2D materials and provide a new approach of constructing either visual perception memory or photonic synaptic devices.     

中国充电器标准化带来的变化

中国政府率先开始了手机充电器的标准化,其目的是让用户更换手机终端后可继续使用原来的充电器,从而通过削减废弃物达到保护环境的目的。     

Role of mitochondria in the switch mechanism of the cell death mode from apoptosis to necrosis--studies on rho0 cells

Detailed mechanisms of the switch of the cell death mode from apoptosis to necrosis remain to be solved, although the intracellular level of ATP and that of free radicals have been postulated to be the major factors involved in the mechanisms. In the present study menadione (MEN)-induced cell injury processes were studied using rho0 cells derived from human osteosarcoma 143B cells and parental rho+ cells co-treated with inhibitors of electron transfer chain of mitochondria or oligomycin, an inhibitor of ATP synthesis. Treatment of rho+ cells with 100 microM MEN induced apoptosis, which reached the maximum at 6 h, and was followed by an abrupt decrease thereafter, while necrotic cells (NC) increased continuously when they were judged by Annexin V and PI double staining. On the other hand, MEN induced apoptotic and necrotic changes much faster in rho0 cells compared to rho+ cells. The frequency to find apoptotic cells (AP) in the former cells was distinctly smaller than that to find NC judged by Annexin V and PI double staining. Electron microscopically, a major population of rho0 cells treated with MEN for 6 h consisted of intermediate cells, and a small number of AP co-existed. At 9 h of the treatment intermediate cells were exclusively seen, and AP were hardly detected. When parental rho+ cells were treated with MEN in the presence of oligomycin or oligomycin plus antimycin A both apoptotic and necrotic changes of the cells were distinctly accelerated. The intracellular level of superoxide in rho0 cells continuously increased after the MEN treatment, whereas that of ATP remained distinctly low before and after the MEN treatment compared to that in rho+ cells. These data suggest that the intracellular level of superoxide may be a key factor controlling the switch from apoptosis to necrosis.