Effect of Nozzle Angle on Flow Field and Temperature Distribution in a Billet Mould when using Swirl Flow

Recently, interesting effects have been noted in studies of swirl flow, particularly regarding billet moulds when considering a specific divergent angle of the immersion nozzle. Therefore, in the present work a numerical analysis and water model study of the mould region of a continuous casting apparatus are performed with changing the outlet divergent angles of the immersion nozzle using swirling flow in the pouring tube, to control the heat and mass transfer in the continuous casting mould. To make our studies consistent with the previous research, which was done based on a square billet, this time we investigate round billets. The results show that the distance from the meniscus of the centres of both the lower and upper circulation loops decreases systematically with increasing the divergent angle. This, in turn, leads to: (i) a more active heat and mass transport near the meniscus (particularly over 100°); (ii) a gradual change from a concentric circulation to a more clearly logarithmic spiral from the mould wall to the nozzle on the meniscus, which leads to more active heat and mass transfer; (iii) a decreased penetration depth of nozzle outlet flow (even at a comparatively small divergent angle such as 20°) and a superheat dissipation in the melt.     

Sellmeier dispersion for phase-matched terahertz generation in ZnGeP2

A Sellmeier dispersion of zinc germanium diphosphide (ZnGeP2) crystal has been formulated to determine the phase-matching characteristics of the crystal for the generation of coherent tunable terahertz radiation by difference-frequency mixing techniques. The results computed with the formulated Sellmeier dispersion provide an excellent fit to the experimental data.     

Syntheses and properties of B-C-N and BN nanostructures

The current status of research on boron-carbon-nitrogen (B-C-N) and boron nitride (BN) nanotubes is presented. The latest achievements in syntheses, analyses and property measurements of these nanoscale tubular architectures are reviewed. The characteristic features of B-C-N and BN nanotubes, compared with conventional C nanotubes, are paid special attention. In particular, the latest breakthroughs in the chemical vapour deposition synthesis of BN nanotubes and an insight into their unique structures are highlighted. A wide range of potential applications is also envisaged, based on the recent progress, which includes pioneering results in BN nanocable fabrication, gas adsorption, electron transport and field emission measurements.     

Chemical (Sr,Co)-doping effect on critical current density for Dy123 melt-solidified bulks

The dilute impurity doping for CuO-chain site was found to largely improve the critical current properties of both Y123 single crystals and Y123 melt-solidified bulks in our previous study. In addition, dilute Sr-doping to Ba site is also effective for enhancement of J_c without serious decrease in T_c as in the case of dilute Zn doping for CuO₂-plane site. In the present study, we have attempted further enhancement of flux pinning force of the Dy123 melt-solidified bulk, which is essentially more promising materials than Y123, by impurity doping for Cu site in the CuO-chain and for Ba site. Although the (Sr,Co)-co-doped Dy123 melt-solidified bulks showed systematically suppressed T_c with their doping levels, high T_c's well exceeding 90 K were maintained. All the Sr-doped or Co-doped Dy123 bulks exhibited higher J_c than the undoped one. More improved J_c properties were achieved by (Sr,Co)-co-doping, suggesting that pinning potential at local regions around doped impurities become deeper by Co-doping, resulting in stronger point-defect-like pinning sites. In addition, more detailed studies on the dilute Sr-doping and the dilute (Sr,Co)-Co-doping were carried out for Y123 single crystals in order to clarify the difference between their doping effects on the J_c properties. The vortex transition field, H^*, to the disordered state in the M–H loops for the Co-doped Y123 single crystal was located at the lower field than that of the Sr-doped one, meaning that the Co ions strongly affect the vortex system compared with the Sr ions.     

Initial stages of high-temperature CaF2/Si(001) epitaxial growth studied by surface X-ray diffraction

Surface X-ray diffraction was applied to study structure of the fluorite-silicon interface forming upon epitaxial growth of CaF2 on Si(001) surface kept at 750 degrees C. Samples with CaF2 coverage of 1.5-4 (110)-monolayers were grown and in-situ characterized using synchrotron radiation. The 3 x 1-like surface reconstruction was observed in agreement with the previous studies by electron diffraction. Interestingly, a well pronounced splitting of the fractional x 1/3 reflections was revealed. This splitting was ascribed to the effect of antiphase domain boundaries in the row-like structure of the interface layer. The in-plane integrated intensities were used to reconstruct two-dimensional atomic structure of the high-temperature CaF2/Si(001) interface.     

A bona fide two-dimensional percolation model: an insight into the optimum photoactivator concentration in La2/3-xEuxTa2O7 nanosheets

La–Eu solid solution nanosheets La_2/3−xEu_xTa₂O₇ have been synthesized, and their photoluminescence properties have been investigated. La_2/3−xEu_xTa₂O₇ nanosheets were prepared from layered perovskite compounds Li₂La_2/3−xEu_xTa₂O₇ as the precursors by soft chemical exfoliation reactions. Both the precursors and the exfoliated nanosheets exhibit a decrease in intralayer lattice parameters as the Eu contents increase. However, there is a discontinuity in this trend between the nominal Eu content ranges x≤ 0.3 and x ≥ 0.4. This discontinuity is attributed to the difference in degree of TaO₆ octahedra tilting for the La- and Eu-rich phases. La_2/3−xEu_xTa₂O₇ nanosheets exhibit red emission, characteristic of the f–f transitions in Eu³⁺ photoactivators. The photoluminescence emission can be obtained from both host and direct photoactivator excitation. However, photoluminescence emission through host excitation is much more dominant than that through direct photoactivator excitation, and this behavior is consistent with that of all the other rare-earth photoactivated nanosheets reported previously. The absolute photoluminescence quantum efficiency of the La_2/3−xEu_xTa₂O₇ nanosheets increases as the experimentally determined Eu contents increase up to x=0.45 and decrease above it. This result is in good agreement with the optimum photoactivator concentration expected from the percolation theory. These solid solution La_2/3−xEu_xTa₂O₇ nanosheets are excellent models for validating the theory of optimum photoactivator concentration in the truly two-dimensional photoactivator matrix.     

A short guide to topological terms in the effective theories of condensed matter

This article is meant as a gentle introduction to the topological terms that often play a decisive role in effective theories describing topological quantum effects in condensed matter systems. We first take up several prominent examples, mainly from the area of quantum magnetism and superfluids/superconductors. We then briefly discuss how these ideas are now finding incarnations in the studies of symmetry-protected topological phases, which are in a sense a generalization of the concept of topological insulators to a wider range of materials, including magnets and cold atoms.     

Te concentration dependent photoemission and inverse-photoemission study of FeSe1?xTex

We have characterized the electronic structure of FeSe_1−xTe_x for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E_F): its splitting near E_F and filling of the pseudogap in FeSe. IPES shows two features, near E_F and approximately 6 eV above E_F; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near E_F for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.     

Possibility of Mg- and Ca-based intermetallic compounds as new biodegradable implant materials

Mg- or Ca-based intermetallic compounds of Mg₂Ca, Mg₂Si, Ca₂Si and CaMgSi are investigated as possible new candidates for biodegradable implant materials, attempting to improve the degradation behavior compared to Mg and Ca alloys. The reactivity of Ca can be indeed reduced by the formation of compounds with Mg and Si, but its reactivity is still high for applications as an implant material. In contrast, Mg₂Si shows a higher corrosion resistance than conventional Mg alloys while retaining biodegradability. In cytotoxicity tests under the severe condition conducted in this study, both pure Mg and Mg₂Si showed relatively high cytotoxicity on preosteoblast MC3T3-E1. However, the cell viability cultured in the Mg₂Si extract medium was confirmed to be better than that in a pure Mg extract medium in all the conditions investigated with the exception of the 10% extract medium, because of the lower corrosion rate of Mg₂Si. The cytotoxicity derived from the Si ion was not significantly detected in the Mg₂Si extract medium in the concentration level of ~ 70 mg/l measured in the present study. For aiming the practical application of Mg₂Si as an implant material, however, its brittle nature must be improved.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.