波形刃铣刀片铣削温度试验分析

进行了铣削温度试验 ,采用改进的人工热电偶法 ,利用动态数据采集系统 ,对波形刃铣刀片的铣削温度进行了采集。利用C语言和MATLAB软件对试验数据进行了分析 ,拟合出温度—时间 (T t)曲线 ,初步得到了受热密度函数 ,为温度场的可视化打下有力的基础     

保证跌落试件姿态的方法

进行包装件的自由跌落试验时,必须保证试件姿态符合标准规定。笔者在实践中总结出一种保证试件姿态和检验试件姿态误差的具体方法。     

跨世纪的测井找油找气高技术

人类社会即将跨入21世纪,各行各业都在预测未来技术的发展,测井行业也不例外。预测成象测井技术将是跨世纪的测井找油找气高技术。     

EXPERIMENTAL RESEARCH ON EFFECT OF MAIN-FLOW SWING ON FLOW TURBULENCE STRUCTURE

It is mentioned in this paper that the adjustment of flow structure occurs when themain-flow swings.The changes of turbulence structure and flow energy loss in the indoor rivermodel are measured.The experimental data are presented for the first time for the further studyof complicated river flow structure.     

震源延迟叠加技术及应用效果

延迟叠加爆炸是针对高分辨率和深层地震勘探而提出来的一种激发方式。这种激发方式能在保证地震分辨率的前提下有效提高地震波能量 ,在地震波的入射角范围内 ,有效克服非球形炸药激发引起的地震波传播的方向性。应用弹性波动力学对多级延迟爆炸进行理论研究 ,结合实际试验资料 ,研究了延迟爆炸情况下激发参数对地震波能量、主频、频宽等的影响。从几何地震学出发 ,分析了不同时间激发的地震波在地下空间中的干涉情况 ,对其能量传播的方向性进行了研究。理论分析和试验效果表明 ,延迟叠加震源与相同药量的普通震源相比 ,激发地震波的主频高 ,频带宽 ,增强了下传能量 ,降低了次生干扰 ,在高分辨率和深层地震勘探中具有明显的优势。     

Study of miscibility enhancement in poly(styrene‐co‐4‐vinylphenol)/poly(ethylene oxide) blends by the spin labelling method

The electron spin resonance (ESR) spectra of end‐group spin labelled poly(ethylene oxide) (SLPEO) using 2,2,6,6‐tetramethyl‐piperdine‐1‐oxyl nitroxide and its blends with poly(styrene‐co‐4‐vinylphenol) (STVPhs) of different hydroxyl contents were recorded over a wide temperature range. For a blend of SLPEO and pure polystyrene (PS), the ESR spectrum was composed of a single motion component, indicating that PS was immiscible with PEO. For blends composed of SLPEO and different‐hydroxyl‐content STVPhs, two spectral components with different motion rates were observed over a certain temperature range. The difference between the motion rates should be attributed to micro‐heterogeneity in the blends, with the faster rate corresponding to a nitroxide radical motion trapped in the PEO‐rich domain and the slower rate corresponding to a nitroxide radical motion trapped in the STVPh‐rich domain. Variations in the values of a number of the ESR parameters (T_a, T_d and T_50G) and the apparent activation energy (E_a) with hydroxyl content in the blends indicated that the miscibility of the blends increased with increasing hydrogen‐bonding density due to specific interactions between the hydroxyl groups in STVPh and the ether oxygens in PEO. Copyright © 2004 Society of Chemical Industry     

媒体服务中流式拷贝性能分析

随着网络带宽的进一步提高,视频点播的瓶颈基本卡在视频服务器端。文章提供的服务器端的流式拷贝,能进一步提高整个系统的服务能力。文章对流式拷贝的过程进行描述,对其中的数学模型进行分析,并与没有流式拷贝的系统进行比较分析。     

Single-photon avalanche diode detectors for quantum key distribution

The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 mum wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.     

Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-Gan

The effects of boiling Aqua Regia (AQ), N₂/Cl₂ plasma followed by AQ and O₂ plasma followed by AQ surface treatments prior to Ni/Au (20 nm/20 nm) metallization to p-GaN:Mg (∼ 3 × 10¹⁷ cm^− 3) have been investigated. N₂/Cl₂ plasma was employed in a bid to lower the Ga/N and O/Ga ratios of the GaN surface to improve the contact properties to p-GaN, while O₂ plasma was employed as an alternative to incorporate O into the Ni/Au system. Results show that a low Ga/N ratio does not necessarily correspond to a better contact. The positive effect of O₂ over N₂ anneal is observed only for the AQ-treated sample, although the mechanisms responsible for its positive effect: NiO formation and Ni/Au layer-reversal were observed for all O₂-annealed contacts. We conclude that the effect of O₂ anneal on the Ni/Au contact is dependant on the p-GaN surface prior to metallization.