Dynamic oxide voltage relaxation spectroscopy

A new method for trap characterization of oxidized silicon is described. The Dynamic Oxide Voltage Relaxation Spectroscopy (DOVRS) is an improved version of the formerly proposed Oxide Voltage Relaxation Spectroscopy (OVRS) technique which applies a periodic long duration constant current for tunneling injection. It has been demonstrated that the new technique can be used not only to separate and identify the oxide trap from interface trap, but also to separate and determine the centroid from the oxide trap density generated in the MOS system by the tunneling current stress. In the pulse constant current mode, the OVRS measurement can be completed instead of using the double current-voltage technique. Thus the new method results in more accurate and quicker measurements of the oxide trap centroid. Analytical expressions for computing the paramaters of the interface and oxide traps are derived. The effect of the channel carrier mobility on the spectroscopy is also considered. Two types of oxide and two types of interface traps were observed at a pulse constant Fowler-Nordheim current stress by the new method of DOVRS     

Expert system application for the loading capability assessment oftransmission lines

This paper describes the application of an expert system for the evaluation of the short-term thermal rating and temperature rise of overhead conductors. The expert system has been developed using a database and Leonardo expert system shell which is gaining popularity among commercial tools for developing expert system applications. The expert system has been found to compare well when evaluated against site tests. A practical application is given to demonstrate the usefulness of the expert system developed     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source     

An automatic method for controlling the centre of gravity of a model

In many applications the location of the centre of gravity of a mechanical part is an important factor that a designer must consider. If it is not in a desired location, a part might not work properly, e.g. unbalanced force might be generated in a rotational part. After a part is modeled, its centre of gravity cannot be altered unless its external shape or internal mass distribution is changed. However, the external shape is usually constrained by other design considerations. In this paper, an algorithm is proposed for controlling the centre of gravity of a hollowed part. Using this algorithm, the location of the centre of gravity of a part is controlled by changing its internal mass distribution.     

A transmit/receive IF chip set for WCDMA mobiles in 0.35 /spl mu/m CMOS

An implementation of the IF section of WCDMA mobile transceivers with a set of two chips fabricated in an inexpensive 0.35-/spl mu/m two-poly three-metal CMOS process is presented. The transmit/receive chip set integrates quadrature modulators and demodulators, wide dynamic range automatic gain control (AGC) amplifiers, with linear-in-decibel gain control, and associated circuitry. This paper describes the problems encountered and the solutions envisaged to meet stringent specifications, with process and temperature variations, thus overcoming the limitations of CMOS devices, while operating at frequencies in the range of 100 MHz-1 GHz. Detailed measurement results corroborating successful application of the new techniques are reported. A receive AGC dynamic range of 73 dB with linearity error of less than /spl plusmn/2 dB and spread of less than 5 dB for a temperature range of -30/spl deg/C to +85/spl deg/C in the gain control characteristic has been measured. The modulator measurement shows a carrier suppression of 35 dB and sideband/third harmonic suppression of over 46 dB. The core die area of each chip is 1.5 mm/sup 2/.     

应用管网式水力喷射泵延长垦西油田油井免修期

水力喷射泵采油是 2 0世纪 90年代初研制成功的一种采油新工艺 ,1994年通过ISO90 0 1质量体系认证 ,主要适用于稠油井、出砂严重及偏磨、腐蚀严重的油井。 1998年 3月开始在垦西油田K71断块实施该工艺 ,目前有管网式水力喷射泵井 2 7口 ,与常规机械采油相比 ,垦西油田油井免修期由 110d延长到 35 0d左右。介绍了管网式水利喷射泵采油工艺及其在垦西油田的实施效果。     

机电一体化技术在综合采煤设备中的应用与发展

介绍了机电一体化技术在国内外煤矿井下综采设备中的应用，并论述了机电一体化技术发展与相关技术的研究。     

空间桁架结构拓扑优化设计的线性规划方法

本文以杆件内力为设计变量,构造了多工况作用下空间桁架结构拓扑优化的线性规划模型,考虑了应力和位移约束,能够避免奇异最优拓扑和不稳定结构的产生。