High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices

We report a unique non-radiative p-n-p junction structure to provide high current conduction with high mobility in organic semiconductor devices. The current conduction was improved by increasing p-n junctions made with intrinsic p-type hole transport layer and n-type electron transport layer. The excellent hole mobility of 5.3 × 10^?1 cm²/V s in this p-n-p device configuration is measured by the space charge limited current method with an electric field of 0.3 MV/cm. Enhanced current conduction of 248% at 4.0 V was observed in fluorescent blue organic light-emitting diodes with introduction of non-radiative p-n-p-n-p junction interfaces. Thereupon, the power efficiency at 1000 cd/m² was improved by 22% and the driving voltage also was reduced by 17%, compared to that of no interface device. Such high current conduction with high mobility is attributed to the carrier recombination at p-n-p interfaces through coulombic interaction. This non-radiative p-n-p junction structure suggested in this report can be very useful for many practical organic semiconductor device applications.     

Watt-level Ka- and Q-band MMIC power amplifiers operating at lowvoltages

Ka- and Q-band watt-level monolithic power amplifiers (PAs) operating at a low drain bias of 3.6 V are presented in this paper. Design considerations for low-voltage operation have been carefully studied, with an emphasis on the effect of device models. The deficiency of conventional table-based models for low-voltage operation is identified. A new nonlinear device model, which combines the advantages of conventional analytical models and table-based models, has been developed to circumvent the numerical problems and, thus, to predict optimum load impedance accurately. The model was verified with load-pull measurements at 39 GHz. To implement a low-voltage 1-W monolithic-microwave integrated-circuit amplifier, careful circuit design has been performed using this model. A Q-band two-stage amplifier showed 1-W output power with a high power gain of 15 dB at 3.6-V drain bias. The peak power-added efficiency (PAE) was 28.5% and 1-dB compression power (P_{1 dB}) was 29.7 dBm. A Ka-band two-stage amplifier showed a P_{1 dB} of 30 dBm with 24.5-dB associated gain and 32.5% PAE. Under very low dc power conditions (P_dc<2 W, V_ds=3.4 V), the amplifiers showed 29-dBm output power and PAE close to 36%, demonstrating ultimate low-power operation capability. To the best of our knowledge, this is the first demonstration of watt-level PA's under 3.6-V operation at 26 and 40 GHz. Compared with the published data, this work also represents state-of-the-art performance in terms of power gain, efficiency, and chip size     

Base station location in a cellular CDMA system

We consider a cellular CDMA system in which blocking is enforced when the relative interference exceeds a certain threshold level. This paper addresses a radio network design problem in such a CDMA system. Given the data of call‐traffic distributed over the service area and potential sites of base stations, the objective of the problem is to locate base stations so as to minimize the associated cost for establishing base stations while keeping the probability of blocking under control. We develop an efficient algorithm for solving the design problem. Computational experiments with real‐world data are conducted to show both the efficiency and the practicality of the proposed design method. This revised version was published online in August 2006 with corrections to the Cover Date.     

Fabrication of polymeric large-core waveguides for opticalinterconnects using a rubber molding process

Polymeric large-core (47 μm×41 μm) optical waveguides for optical interconnects have been fabricated by using a rubber molding process. For low-cost low-loss large-core waveguides, our newly developed thick-photoresist patterning process is used for a master fabrication. Also a low-loss thermocurable polymer, perfluorocyclobutane (PFCB), is used in fabricating optical waveguides by rubber molding for the first time. The propagation loss is measured to be 0.4 dB/cm at the wavelength of 1.3 μm, and 0.7 dB/cm at the wavelength of 1.55 μm     

A new on-chip interconnect crosstalk model and experimentalverification for CMOS VLSI circuit design

A new, simple closed-form crosstalk model is proposed. The model is based on a lumped configuration but effectively includes the distributed properties of interconnect capacitance and resistance. CMOS device nonlinearity is simply approximated as a linear device. That is, the CMOS gate is modeled as a resistance at the driving port and a capacitance at a driven port. Interconnects are modeled as effective resistances and capacitances to match the distributed transmission behavior. The new model shows excellent agreement with SPICE simulations. Further, while existing models do not support the multiple line crosstalk behaviors, our model can be generalized to multiple lines. That is, unlike previously published work, even if the geometrical structures are not identical, it can accurately predict crosstalk. The model is experimentally verified with 0.35-μm CMOS process-based interconnect test structures. The new model can be readily implemented in CAD analysis tools. This model can be used to predict the signal integrity for high-speed and high-density VLSI circuit design     

A 16-Bit by 16-Bit MAC Design Using Fast 5:3 Compressor Cells

3:2 counters and 4:2 compressors have been widely used for multiplier implementations. In this paper, a fast 5:3 compressor is derived for high-speed multiplier implementations. The fast 5:3 compression is obtained by applying two rows of fast 2-bit adder cells to five rows in a partial product matrix. As a design example, a 16-bit by 16-bit MAC (Multiply and Accumulate) design is investigated both in a purely logical gate implementation and in a highly customized design. For the partial product reduction, the use of the new 5:3 compression leads to 14.3% speed improvement in terms of XOR gate delay. In a dynamic CMOS circuit implementation using 0.225 m bulk CMOS technology, 11.7% speed improvement is observed with 8.1% less power consumption for the reduction tree.     

Bandwidth Adaptation Algorithms for Adaptive Multimedia Services in Mobile Cellular Networks

The fluctuation of available link bandwidth in mobilecellular networks motivates the study of adaptive multimediaservices, where the bandwidth of an ongoing multimedia call can bedynamically adjusted. We analyze the diverse objectives of theadaptive multimedia framework and propose two bandwidth adaptationalgorithms (BAAs) that can satisfy these objectives. The firstalgorithm, BAA-RA, takes into consideration revenue and``anti-adaptation' where anti-adaptation means that a user feelsuncomfortable whenever the bandwidth of the user's call ischanged. This algorithm achieves near-optimal total revenue withmuch less complexity compared to an optimal BAA. The secondalgorithm, BAA-RF, considers revenue and fairness, and aims at themaximum revenue generation while satisfying the fairnessconstraint defined herein. Comprehensive simulation experimentsshow that the difference of the total revenue of BAA-RA and thatof an optimal BAA is negligible. Also, numerical results revealthat there is a conflicting relationship between anti-adaptationand fairness.     

A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential method

A new physics-based noise model of a GaAs PHEMT is developed using the characteristic potential method (CPM). The model calculates the intrinsic noise current sources using CPM. Combined with the extrinsic noise parameters extracted from the measured S-parameters, the model reproduces four noise parameters of the device accurately under low drain bias voltages without using any fitting parameters. The model is verified with a 0.2-/spl mu/m GaAs PHEMT and shows excellent agreement with the measurements for all the noise parameters up to a drain voltage of 1 V Also, the proposed method allows the simulation of the microscopic noise distribution and thus allows one to obtain a physical understanding of noise mechanisms inside the device.     

CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-/spl mu/m VCSELs grown by MOCVD

We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-/spl mu/m vertical-cavity surface-emitting laser operating continuous wave up to 35/spl deg/C. The structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In/sub 0.4/Al/sub 0.6/As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.