Optimization of an RFID location identification scheme based on the neural network

An indoor localization technology is increasingly critical as location‐aware applications evolve. Researchers have proposed several indoor localization technologies. Because most of the proposed indoor localization technologies simply involve using the received signal strength indicator value of radio‐frequency identification (RFID) for indoor localization, radio‐frequency interference, and environmental factors often limit the accuracy of localization results. Therefore, this study proposes an accurate RFID localization based on the neural network (ARL‐N²), a passive RFID indoor localization scheme for identifying tag positions in a room, combining a location identification based on dynamic active RFID calibration algorithm with a backpropagation neural network (BPN). The proposed scheme composed of two phases: in the training phase, an appropriate BPN architecture is constructed using the training data derived from the coordinates of reference tags and the coordinates obtained using the localization algorithm. By contrast, the online phase involves calculating the tracking tag coordinates and using these values as BPN inputs, thereby enhancing the estimated location. A performance evaluation of the ARL‐N² schemes confirms its high localization accuracy. The proposed method can be used to locate critical objects in difficult‐to‐find areas by creating minimal errors and applying and economical technique. Copyright © 2013 John Wiley & Sons, Ltd.     

Broadband monolithic passive baluns and monolithic double-balancedmixer

The design and fabrication of four broadband monolithic passive baluns including CPW Marchand, multilayer MS Marchand, planar-transformer and broadside-coupled line baluns are presented. Operational frequencies range from 1.5 GHz to 24 GHz. Maximum relative bandwidths in excess of 3:1 are achieved. Simulated performances using full wave electromagnetic analysis are shown to agree with the measured results. Two accurate equivalent circuit models constructed from either electromagnetic simulated or measured S-parameters are developed for the MS Marchand and transformer baluns making the optimization of baluns and circuit design using the baluns much more efficient. The design of monolithic double-balanced diode mixer using two planar-transformer baluns is also presented. Without DC bias, the mixer shows a minimum conversion loss of 6 dB with the RF at 5 GHz and a LO drive of 15 dBm at 4 GHz. The measured input IP₃ of this mixer is better than 15 dBm over the 4 to 5.75 GHz frequency band     

Numerical Study of Self-Complementary Antenna Characteristics on Substrate Lenses at Terahertz Frequency

This paper presents a numerical study of self-complementary antennas on substrate lenses made of high-permittivity dielectric material. Bowtie, logarithmically periodic, and logarithmic spiral antennas with the same outer and inner dimensions were selected for study, and their overall performances were compared in the terahertz band at frequencies up to 5.0?THz. The resonance and radiation characteristics of the three antennas were investigated in terms of input impedance, directivity, and radiation efficiency, using a full electromagnetic simulator. This study provides useful guidelines and partially solves the difficult problems of choosing the proper feed and optimizing the lens structure for a THz broadband integrated lens antenna.     

Different Directions of Switching of Chromium Oxide Thin Films

We have investigated the switching behavior of as-deposited CrO _x and post-annealed CrO _y films by use of a variety of electrodes (top electrode Ag, Ti; bottom electrode Pt, fluorine tin oxide (FTO)). Resistance switching is highly dependent on electrode material and post-annealing treatment. Among Pt devices, I–V hysteresis was observed for the Ag/CrO _x /Pt device only; no resistance switching was observed for Ag/CrO _y /Pt, Ti/CrO _x /Pt, and Ti/CrO _y /Pt devices. Among FTO devices, I–V hysteresis was observed for the Ag/CrO _x /FTO device whereas I–V hysteresis with the opposite switching direction was observed for Ag/CrO _y /FTO, Ti/CrO _x /FTO, and Ti/CrO _y /FTO devices. The direction of switching depends not only on electrode material but also on post-annealing treatment, which affects the density of grain boundaries. Thus, the density of grain boundaries determines the type of charge carrier involved in the switching process. For as-deposited CrO _x films with a high density of grain boundaries Ag filament paths mediated by electrochemical redox reaction were observed, irrespective of bottom electrode material (Pt or FTO). Post-annealed CrO _y films with a low density of grain boundaries suppressed electrochemical redox reaction in the Ag/CrO _y /Pt device but promoted short-range movement of O^2? ions through the bottom interface, resulting in resistance switching in the Ag/CrO _y /FTO device. Electrochemical redox reaction-controlled resistance switching occurred solely in oxides with a high density of grain boundaries or dislocations.     

Effect of Gold on the Corrosion Behavior of an Electroless Nickel/Immersion Gold Surface Finish

The performance of surface finishes as a function of the pH of the utilized plating solution was evaluated by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization tests in 3.5 wt.% NaCl solution. In addition, the surface finishes were examined by x-ray diffraction (XRD), and the contact angle of the liquid/solid interface was recorded. NiP films on copper substrates with gold coatings exhibited their highest coating performance at pH 5. This was attributed to the films having the highest protective efficiency and charge transfer resistance, lowest porosity value, and highest contact angle among those examined as a result of the strongly preferred Au(111) orientation and the improved surface wettability.     

接触面陷阱密度对a-InSnZnO薄膜晶体管器件电气性能的影响研究

We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powers.The device with the smallest N_t of 5.68×10¹¹ cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage(V_ON) of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio(I_ON/I_OFF) of⁸ x 108.With increasing N_t,the V_ON,S.S and I_ON/I_OFF were suppressed to-9.40 V,0.24 V/dec and 2.59×10⁸,respectively.The V_TH shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices.The result showed that the reduction in N_t contributes to an improvement in the electrical properties and stability.     

Ultrasonication‐Induced Self‐Assembled Fixed Nanogap Arrays of Monomeric Plasmonic Nanoparticles inside Nanopores

Monomeric gold (Au) and silver (Ag) nanoparticle (NP) arrays are self‐assembled uniformly into anodized aluminium oxide (AAO) nanopores with a high homogeneity of greater than 95%, using ultrasonication. The monomeric metal NP array exhibits asymmetric plasmonic absorption due to Fano‐like resonance as interpreted by finite‐difference time‐domain (FDTD) simulation for the numbers up to 127 AuNPs. To examine gap distance‐dependent collective‐plasmonic resonance, the different dimensions of S, M, and L arrays of the AuNP diameters/the gap distances of ≈36 nm/≈66 nm, ≈45 nm/≈56 nm, and ≈77 nm/≈12 nm, respectively, are prepared. Metal NP arrays with an invariable nanogap of ≈50 nm can provide consistent surface‐enhanced Raman scattering (SERS) intensities for Rhodamine 6G (Rh6G) with a relative standard deviation (RSD) of 3.8–5.4%. Monomeric arrays can provide an effective platform for 2D hot‐electron excitation, as evidenced by the SERS peak‐changes of 4‐nitrobenzenethiol (4‐NBT) adsorbed on AgNP arrays with a power density of ≈0.25 mW µm^‐2 at 514 and 633 nm. For practical purposes, the bacteria captured by 4‐mercaptophenylboronic acid are found to be easily destroyed under visible laser excitation at 514 nm with a power density of ≈14 mW µm^‐2 for 60 min using Ag due to efficient plasmonic‐electron transfer.     

Treefrog Toe Pad‐Inspired Micropatterning for High‐Power Triboelectric Nanogenerator

Inspired by treefrog's toe pads that show superior frictional properties, herein, an industrially compatible approach is reported to make an efficient dielectric tribosurface design using customizable nonclose‐packed microbead arrays, mimicking the friction pads of treefrogs, in order to significantly enhance electrification performance and reliability of triboelectric nanogenerator (TENG). The approach involves using an engineering polymer to prepare a highly ordered large‐area concave film, and subsequently the molding of a convex patterned triboreplica in which the concave film is exploited as a reusable master mold. A nature‐inspired TENG based on the patterned polydimethylsiloxane (PDMS) paired with flat aluminum (Al) can generate a relatively high power density of 8.1 W m^?2 even if a very small force of ≈6.5 N is applied. Moreover, the convex patterned PDMS‐based TENG possesses exceptional durability and reliability over 25 000 cycles of contact–separation. Considering the significant improvements in power generation of TENG; particularly at very small force, together with cost‐effectiveness and possibility of mass production, the present methodology may pave the way for large‐scale blue energy harvesting and commercialization of TENGs for many practical applications.