首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   27773篇
  免费   2582篇
  国内免费   1237篇
电工技术   1673篇
技术理论   4篇
综合类   1914篇
化学工业   4403篇
金属工艺   1727篇
机械仪表   1930篇
建筑科学   2208篇
矿业工程   850篇
能源动力   812篇
轻工业   2124篇
水利工程   519篇
石油天然气   1920篇
武器工业   218篇
无线电   3062篇
一般工业技术   3164篇
冶金工业   1219篇
原子能技术   305篇
自动化技术   3540篇
  2024年   111篇
  2023年   541篇
  2022年   908篇
  2021年   1299篇
  2020年   1086篇
  2019年   794篇
  2018年   900篇
  2017年   978篇
  2016年   841篇
  2015年   1235篇
  2014年   1424篇
  2013年   1661篇
  2012年   1758篇
  2011年   1941篇
  2010年   1649篇
  2009年   1505篇
  2008年   1585篇
  2007年   1480篇
  2006年   1487篇
  2005年   1280篇
  2004年   823篇
  2003年   794篇
  2002年   859篇
  2001年   746篇
  2000年   633篇
  1999年   701篇
  1998年   502篇
  1997年   414篇
  1996年   369篇
  1995年   319篇
  1994年   258篇
  1993年   175篇
  1992年   141篇
  1991年   88篇
  1990年   83篇
  1989年   60篇
  1988年   40篇
  1987年   37篇
  1986年   23篇
  1985年   18篇
  1984年   8篇
  1983年   8篇
  1982年   4篇
  1981年   8篇
  1980年   8篇
  1979年   3篇
  1978年   2篇
  1959年   1篇
  1953年   1篇
  1951年   2篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
61.
激光晶体Nd:YVO4的形貌及生长缺陷   总被引:1,自引:0,他引:1  
本文报道了应用环境扫描电镜(ESEM)和同步辐射X射线白光形貌术对采用提拉法生长出的Nd:YVO4晶体进行的形貌及生长缺陷的分析,获得了该晶体的开裂表面的ESEM形貌像以及取自晶体肩部和中间部位的(001)面的同步辐射白光形貌像,观察到了位错、包裹物等缺陷,可为生长高质量的Nd:YVO4晶体提供重要的启示.  相似文献   
62.
吴铠  田忠和 《宽厚板》2002,8(3):30-32
介绍了柳钢2800mm中板轧机液压自动厚度控制(HAGC0系统工艺参数与系统的结构、特点和功能。系统还包括平面形状控制、动态规程自动和控制轧制技术,构成一个较完善的控制系统。  相似文献   
63.
基于数字信号处理器的直流电机控制系统   总被引:4,自引:0,他引:4  
介绍了定点数字信号处理器(DSP)TMS320F240的一般性能及其在永磁无刷直流电机控制上的应用,给出了硬件设计方案、软件策略及输出结果。  相似文献   
64.
TP130TT高抗挤套管研究与应用   总被引:6,自引:5,他引:1  
为了提高盐层段固井质量 ,中原油田研究开发了 TP130 TT高抗挤套管 ,性能试验评价表明 ,其抗挤强度超过 16 0 MPa,并给出了其固井质量评价标准。在中原油 346口井中的应用表明 ,该套管有效地解决了盐层段套管损坏问题 ,延长了油气水井寿命 ,经济效益和社会效益显著。  相似文献   
65.
田芳 《玻璃与搪瓷》2005,33(4):34-37,63
采用微软公司Microsoft Excel的规划求解功能,可以快速准确地进行玻璃料方的计算,从而大大提高工作效率.本文以平板玻璃料方为例,对玻璃料方的电子计算机计算原理作介绍,并对利用Excel电子表格的规划求解功能进行玻璃料方计算的过程进行介绍.  相似文献   
66.
in-situ transmission electron microscopy (TEM) tensile tests on as-cast and aged 63Sn37Pb solder alloys were conducted, and the fracture behavior in nanometer scale ahead of the crack tip was inspected and discussed. Results show that the fracture was completed by connecting the discontinuous cracks or voids. Dislocation behavior was concentrated along the grain boundaries for as-cast samples, and displayed mainly as dislocation climb. The crack was intergranular dominated under the lower strain rate. While remarkable mutual dislocation emission was detected in the aged solder. Transgranular cracks were dominant in the fractured area, and they propagated by linking up with the nanometer scale cracks ahead of the crack tips under the effective promotion of the inverse dislocation emission. At the same time, the partial interphase or intergranular cracks in the thinned area were also found. Under this condition, a new critical stress intensity factor K c to define the mutual dislocation emission was proposed.  相似文献   
67.
压密注浆及其在地基加固中的应用   总被引:1,自引:0,他引:1  
在简单介绍了压密注浆工法的加固机理、影响被加固土体强度的因素的基础上,结合工程实例介绍了压缩注浆工法的工程应用情况。  相似文献   
68.
We report on the demonstration of optically pumped photonic crystal lasers with InAs quantum dot active regions operating at room temperature near 1310 nm. Absorbed threshold pump powers as low as 25 /spl mu/W are observed. We also extract a characteristic temperature of 17 K, which is attributed to limitations caused by surface recombination.  相似文献   
69.
Enhancing echo cancellation via estimation of delay   总被引:2,自引:0,他引:2  
The advent of packetized audio transmission, such as voice over IP (VoIP), has resulted in challenging requirements for echo cancellation technology. One key aspect of this technology is the need to characterize, quickly and accurately, the echo paths in the transmission media. Echo paths consist of a constant time delay with no echo signal and active regions in which the echo signal is present. When an adaptive filter echo cancellation algorithm is used, its performance can be greatly increased, and its complexity can be reduced if it is only applied to the active regions. This requires an algorithm to estimate the constant delay and locate the active regions. Traditionally, delay estimation has been based on direct application of cross-correlation. This method has poor performance because the input signals are highly correlated and has a high implementation cost because many cross-correlation lags have to be computed for longer time delays. The delay estimation addressed in this paper has two major advantages over the traditional methods. The first is that it has improved performance because the input signals are processed to have less correlation. The second is that the implementation cost is significantly reduced because fewer cross-correlation lags are computed, and an efficient method to estimate lags is created.  相似文献   
70.
Transition-metal compound TiC60 thin films were grown by co-deposition from two separated sources of fullerene C60 powder and titanium. Study of structural properties of the films, by Raman spectroscopy, atomic force microscopy, and scanning tunneling spectroscopy reveals that the films have a deformed C60 structure with certain amount of sp3 bonds and a rough surface with a large number of nanoclusters. zV tunnelling spectroscopic measurements suggest that several charge transport mechanisms are involved in as the tip penetrates into the thin film. Conventional field electron emission (FEE) measurements show a high emission current density of 10 mA/cm2 and a low turn-on field less than 8 V/μm, with the field enhancement factors being 659 and 1947 for low-field region and high-field region, respectively. By exploiting STM tunneling spectroscopy, local FEE on nanometer scale has also been characterized in comparison with the conventional FEE. The respective field enhancement factors are estimated to be 99–355 for a gap varying from 36 to 6 nm. The enhanced FEE of TiC60 thin films can be ascribed to structural variation of C60 in the films and the electrical conducting paths formed by titanium nanocrystallites embedded in C60 matrix.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号