Isolation and characterization of the ATF2 gene encoding alcohol acetyltransferase II in the bottom fermenting yeast Saccharomyces pastorianus

The ATF2 gene encodes alcohol acetyltransferase II, which catalyses the synthesis of isoamyl acetate from acetyl coenzyme A and isoamyl alcohol. To characterize the ATF2 gene from the bottom fermenting yeast Saccharomyces pastorianus, the S. pastorianus ATF2 gene was cloned by colony hybridization using the S. cerevisiae ATF2 gene as a probe. When an atf1 null mutant strain was transformed with a multi-copy plasmid carrying the S. pastorianus ATF2 gene, the AATase activity of this strain was increased by 2.5-fold compared to the control. The S. pastorianus ATF2 gene has 99% nucleic acid homology in the coding region and 100% amino acid homology with the S. cerevisiae ATF2 gene. Southern blot analysis of chromosomes separated by pulse-field gel electrophoresis indicated that the ATF2 gene probe hybridized to chromosome VII in S. cerevisiae and to the 1100 kb chromosome in S. pastorianus. As S. pastorianus is thought to be a hybrid of S. cerevisiae and S. bayanus, the S. bayanus-type gene, which has a relatively low level of homology with the S. cerevisiae-type gene, is also usually detected. Interestingly, an S. bayanus-type ATF2 gene could not be detected. These results suggested that the cloned ATF2 gene was derived from S. cerevisiae. Analysis using an ATF2-lacZ fusion gene in S. pastorianus showed that expression of the ATF2 gene was relatively lower than that of the ATF1 gene and that it is repressed by aeration but activated by the addition of unsaturated fatty acids. The S. pastorianus ATF1, Lg-ATF1 and ATF2 Accession Numbers in the DDBJ Nucleotide Sequence Database are D63449, D63450 and D86480, respectively.     

An 8.1-ns Column-Access 1.6-Gb/s/pin DDR3 SDRAM With an 8:4 Multiplexed Data-Transfer Scheme

Three circuit techniques for an 8.1-ns column-access 1.6-Gb/s/pin 512-Mb DDR3 SDRAM using 90-nm dual-gate CMOS technology were developed. First, an 8:4 multiplexed data-transfer scheme, which operates in a quasi-4-bit prefetch mode, achieves a 3.17-ns reduction in column-access time, i.e., from 11.3 to 8.13 ns. Second, a dual-clock latency counter reduces standby power by 22% and cycle time from 1.7 to 1.2 ns. Third, a multiple-ODT-merged output buffer enables selection of five effective-resistance values Rtt (20, 30, 40, 60, and 120 Omega) without increasing I/O capacitance. Based on these techniques, 1.6-Gb/s/pin operation with a 1.36-V power supply and a column latency of 7 was accomplished     

Thiamine pyrophosphatase activity in the Golgi apparatus of calcitonin-treated osteoclasts.

The thiamine pyrophosphatase (TPPase) activity described by Novikoff and Goldfisher was examined in osteoclasts affected by calcitonin in order to elucidate whether the morphological and functional changes of the osteoclasts have an influence over the secretion function of their Golgi apparatus. The Golgi apparatus of osteoclasts of which the ruffled border had disappeared and bone resorption discontinued as the result of treatment with calcitonin showed a slight TPPase activity. The reaction products of the enzyme in these inactive osteoclasts were distinctly fewer than that of control osteoclasts, which were not affected by calcitonin. From these results, it is suggested that there may be a connection between the morphological and functional changes of osteoclasts and the secretion function of the Golgi apparatus.     

Practical model for gas temperature effects on CO2lasers

An analytical and experimental investigation on the effect of gas temperature on convection flow CO₂ lasers is presented. A simple and practical model neglecting the population of lower laser levels is proposed and examined by experiments. The model indicates simply that the gas temperature affects the `inherent threshold discharge power'. Appropriateness of the model has been proven regardless of the schemes of cross flow or axial flow     

A 62-ns 16-Mb CMOS EPROM with voltage stress relaxation technique

To meet the increasing demand for higher-density and faster EPROMs, a 16-Mb CMOS EPROM has been developed based on 0.6-μm N-well CMOS technology. In scaled EPROMs, it is important to guarantee device reliability under high-voltage operation during programming. By employing internal programming-voltage reduction and new stress relaxation circuits, it is possible to keep an external programming voltage V_pp of 12.5 V. The device achieves a 62-ns access time with a 12-mA operating current. A sense-line equalization and data-out latching scheme, made possible by address transition detection (ATD), and a bit-line bias circuit with two types of depletion load led to the fast access time with high noise immunity. This 16-Mb EPROM has pin compatibility with a standard 16-Mb mask-programmable ROM (MROM) and is operative in either word-wide or byte-wide READ mode. Cell size and chip size are 2.2 μm×1.75 μm and 7.18 mm×17.39 mm, respectively     

Photoinduced Magnetization with a High Curie Temperature and a Large Coercive Field in a Co‐W Bimetallic Assembly

The crystal structure, magnetic properties, and temperature‐ and photoinduced phase transition of [{Co^II(4‐methylpyridine)(pyrimidine)}₂{Co^II(H₂O)₂}{W^V(CN)₈}₂]·4H₂O are described. In this compound, a temperature‐induced phase transition from the Co^II (S = 3/2)‐NC‐W^V(S = 1/2) [high‐temperature (HT)] phase to the Co^III(S = 0)‐NC‐W^IV(S = 0) [low temperature (LT)] phase is observed due to a charge‐transfer‐induced spin transition. When the LT phase is irradiated with 785 nm light, ferromagnetism with a high Curie temperature (T_C) of 48 K and a gigantic magnetic coercive field (H_c) of 27 000 Oe are observed. These T_C and H_c values are the highest in photoinduced magnetization systems. The LT phase is optically converted to the photoinduced phase, which has a similar valence state as the HT phase due to the optically induced charge‐transfer‐induced spin transition.     

Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye

We report on the fabrication and the characterization of p-type organic field-effect transistors based on vapor-deposited J-aggregate bisazomethine dye thin films. The absorption spectra of this non-ionic organic semiconductor in the solid state show a strong influence of the film thickness on the J-aggregate formation. However, the electrical characteristics of the devices demonstrate that the hole transport properties do not vary significantly in films thicker than 100 nm. This is due to the fact that the J-aggregates are formed in this material at the surface of the crystalline grains and do not influence the semiconductor/gate dielectric interface and the charge transport properties of the devices. Hole field-effect mobilities as high as 2.4 × 10^?4 cm² V^?1 s^?1 were obtained and could be slightly improved by a solvent vapor treatment due to changes in the film crystallinity. Overall, this study demonstrates that J-aggregate bisazomethine dye thin films are good candidates for the realization of organic electronic devices.     

Rainfall propagation impairments for medium elevation angle satellite‐to‐earth 12 GHz in the tropics

Rain attenuation is the dominant propagation impairment for satellite communication systems operating at frequencies above about 10 GHz. The rainfall path attenuation at 12.255 GHz measured at Universiti Sains Malaysia (USM) for 4 years (2 January to 5 December) is presented. This paper presents an empirical analysis of rain rate and rain attenuation cumulative distribution functions obtained using 1‐min integrated rainfall data and comparison of the measured data with data obtained from well‐established rain model attenuation predictions. Copyright © 2008 John Wiley & Sons, Ltd.     

Optical 40-gb/s 3R regenerator with a combination of the SPM and XAM effects for all-optical networks

An all-optical 3R regenerator with a combination of self-phase modulation (SPM) and cross-absorption modulation (XAM) effects is proposed and investigated. Principle performances of the proposed all-optical 3R regenerator were experimentally investigated at a signal bit rate of 40 Gb/s. The all-optical 3R regenerator, which is located at the midpoint of a 1080-km transmission line, successfully provided an approximately 3-dB improvement of the Q-factor both just after regeneration and after totally 1080-km transmission. The chromatic dispersion tolerance of the proposed 3R regenerator was also investigated and successfully enhanced to about twice as wide by introducing a predistortion block configuration including a highly nonlinear fiber (HNLF). It was confirmed that the proposed all-optical 3R regenerator can become one of the strong candidates for the actual deployment of the all-optical network.     

Uncooled 25 Gbit/s direct modulation of semi-insulating buried-heterostructure 1.3 μm AlGaInAs quantum-well DFB lasers

Uncooled 25 Gbit/s direct modulation of 1.3 mum DFB lasers is demonstrated. The 150 mum-long semi-insulating buried-heterostructure AIGalnAs quantum-well DFB lasers show clear eye-openings with dynamic extinction ratio of 5 dB up to 70degC. 13 km singlemode-fibre transmission experiments using the devices show low power penalty within 1.3 dB between 25 and 70degC. These characteristics are the first achievement by 1.3 mum directly modulated lasers.