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171.
Hideaki Yamashita 《IIE Transactions》2001,33(10):889-895
We study automated guided vehicle systems that contain multiple vehicles. Each vehicle transports an item from a certain point to its destination. The inter-arrival time of items to each node is assumed to be independently and geometrically distributed. Each node has an infinite buffer capacity, and thus no item is lost. The deadhead time of the empty vehicle and the transportation time of the loaded vehicle are assumed to be arbitrarily distributed. We propose two empty vehicle dispatching policies, and numerically calculate the waiting time distributions of the items for each policy using a state-space reduction technique for Markov chains. Several examples are given to demonstrate the advantages and disadvantages of each policy. 相似文献
172.
A new AGC amplifier stabilising the output DC level is proposed and monolithically integrated using 1 ?m Si-bipolar IC technology. First, it is proven that the proposed AGC amplifier is about ten times superior to the conventional one in regard of output DC level stability. Next, it is confirmed that the IC, which exhibits a 720 MHz bandwidth, 39 dB maximum gain and 60 dB gain dynamic range, is feasible for 560 Mbit/s optical transmission. 相似文献
173.
Matsukawa T. Yoshida Y. Kanke M. Yamashita K. Shimada R. Nakayama T. 《Energy Conversion, IEEE Transaction on》1987,(2):262-268
A 215 MVA flywheel motor-generator is used for the toroidal field coil power supply system of the energy breakeven plasma testing facility, JT-60, which started operations in April, 1985 at JAPAN ATOMIC ENERGY RESEARCH INSTITUTE. This paper describes an outline of the flywheel motor-generator and discusses the determination of the Xd' value which affects the voltage regulation characteristic of the motor-generator and the twenty-four pulse rectifier circuit, the compensation effect of AVR for the voltage regulation characteristic, the temperature rise and stress of the flywheel which is the largest one in the world and the torsional vibration caused by a thyristor starter, together with the results of field tests. 相似文献
174.
A wide-band high-gain AGC amplifier stabilizing the output dc level against a broad gain variation is proposed and monolithically integrated using high-speed 1-μm Si-bipolar IC technology. The fabricated IC exhibits a maximum gain of 39 dB, gain dynamic range of 44 dB, bandwidth of 800 MHz, and output dc-level fluctuation of 8 mV, and realizes wide dynamic range and direct dc-coupling of the multistage AGC amplifier. Also, in order to examine the feasibility of the fabricated IC, a 1.5-μm-wavelength optical transmission experiment was carried out using DFB-LD and InGaAs-APD. Measured minimum received optical power for an error rate of 10-9is -40 dBm at 560 Mbit/s and -38 dBm at 1.12 Gbit/s. Optical dynamic range of 30 dB is also achieved by using the fabricated IC and APD. 相似文献
175.
The point-matching technique on boundary conditions is applied to the modal analysis by extending the method in a previous paper by the authors (ibid., vol.LT-4, p.991-6, 1986). The coupling-field characteristics of the optical fibers are then analyzed on the basis of the superposition of eigenmode fields thus obtained. Numerical results in the case of four, five, and six cores indicate that coupling strength is not always a periodic function of propagation length unlike the case of dual-core structures 相似文献
176.
Savary Pierre Nakaoka Mutsuo Maruhashi Toru 《Industrial Electronics, IEEE Transactions on》1987,(2):247-256
The authors introduce a new configuration of resonant-type high-frequency inverter having inherent fast control response of the output power and variable-voltage variable-frequency (VVVF) capability. The circuit is composed of a parallel combination of two series-resonant inverters with common input and output terminals. Both inverter units are operated at synchronous frequency and with an adjustable phase difference from 0° to 180°, allowing control of the output power from full to null power, respectively. Operation of this inverter is explained and computer-simulated operating waveforms and characteristic curves are shown in terms of normalized control variables and circuit parameters. A prototype inverter using Power MOSFET modules has been originally tested with a high-frequency induction heating and melting load to demonstrate experimentally the proposed control principle and the steady-state inverter performances under parallel tuned load conditions. 相似文献
177.
Yinxiang Lu Altan Bolag Jun-ichi Nishida Yoshiro Yamashita 《Synthetic Metals》2010,160(17-18):1884-1891
2,2′-(1,4-Phenylene)bis(2,3-dihydro-1H-naphtho[1,8-de]-1,3,2-diazaboroine) [PND] and 2,2′-(4,4′-biphenylene)bis(2,3-dihydro-1H-naphtho[1,8-de]-1,3,2-diazaboroine) [BND] were synthesized and characterized by using differential scanning calorimetry (DSC) measurements, single crystal X-ray structure analysis, UV–vis absorption and electrochemical measurements, thin-film X-ray diffraction (XRD) and AFM studies. Organic field-effect transistors (OFETs) were fabricated by vacuum deposition with a bottom contact geometry using Au electrodes. Annealing treatment optimizes the organic active layer and increases the charge carrier mobility. Field-effect mobilities of 7.2 × 10?3 for PND and 4.1 × 10?4 cm2 V?1 s?1 for BND were found. 相似文献
178.
Masashi Totokawa Syuichi Yamashita Kenji Morikawa Yoshihito Mitsuoka Toshihiko Tani Hiroaki Makino 《International Journal of Applied Ceramic Technology》2009,6(2):195-204
The piezoresistive mechanisms of composite thick films based on RuO2 particles and both calcium-borosilicate and bismuth-borosilicate glass matrices were investigated by chemical and electrical microanalyses. The resistor based on bismuth-borosilicate glass showed higher sensitivity than that based on calcium-borosilicate glass. It was confirmed that the diffusion of ruthenium into glass affects the binding state of RuO2 at the interface of the glass. Furthermore, an intermediate resistive layer is detected around the RuO2 particle. These results suggest that the piezoresistive effect is related to a change in the electrical conductivity of the interfacial reaction layer caused by the diffusion of ruthenium into glass. 相似文献
179.
180.