A 90-nm logic technology featuring strained-silicon

A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach.     

Service level negotiation andcops-sls protocol

The Internet is a set of interconnected domains in which different QoS technologies can be deployed. The dynamic provision of end-to-end QoS over heterogeneousip networks assumes the negotiation of mutually acceptablesla. This paper presents the concept of intra-, inter- and multiple-domain service level negotiation using thecops-sls protocol. The negotiation process gives different parties in the negotiation the ability to agree upon the service level that a data stream can obtain, along with the permissible pricing of the service.     

Efficient miniature fiber-optic tunable filter based on intracoreBragg grating and electrically resistive coating

An electrically tunable reflection filter based on a platinum-coated single-mode optical fiber that contains an intracore Bragg grating has been demonstrated. The device shows a dc tuning range of 2.15 nm with a corresponding electrical power of 0.54 W. Wavelength modulation (WM) has been observed at frequencies lower than 100 Hz. The wavelength shift depends linearly on the electrical input power. A maximum efficiency of 4.1 nm/W is obtained for dc tuning     

Adaptive wavelet packet based image coding with optimalentropy-constrained lattice vector quantizer (ECLVQ)

In this work, wavelet basis and source coding are jointly optimized, while specifying the source coding strategy as entropy-constrained lattice vector quantizer (ECLVQ). The presented approach differs from previous works in which the choice of wavelet basis is quasioptimal, but the quantizer set is optimally chosen     

Stability analysis of thermo-bioconvection in suspensions of gravitactic microorganisms in a fluid layer

In this paper, we investigate the effect of heating or cooling from below on the stability of a suspension of motile gravitactic microorganisms in a shallow fluid layer. The linear perturbation theory is used to obtain the stability diagram and the critical conditions for the onset of convection. It is found that the thermo-effects may either stabilize or destabilize the suspension, and decrease or increase the wavelength of the bioconvective pattern.     

采用高效LDO为亚微米CMOS负载供电

论述数字IC的供电问题.     

A new millimeter-wave step-frequency radar sensor for distancemeasurement

A new compact millimeter-wave distance-measurement sensor prototype has been developed. The sensor is a step-frequency radar implemented using coherent heterodyne technique. It operates in Ka-band (26.5-40 GHz) and is realized using MICs and MMICs. The sensor transmits sinusoidal signals of incremental frequencies and demodulates the received signals into base-band I/Q signals for processing. Experimental results show that the sensor is capable of measuring distance with less than 0.2 inch of absolute error and a low transmitted power of only -20±3 dBm     

A 32-bit PowerPC system-on-a-chip with support for dynamic voltage scaling and dynamic frequency scaling

A PowerPC system-on-a-chip processor which makes use of dynamic voltage scaling and on-the-fly frequency scaling to adapt to the dynamically changing performance demands and power consumption constraints of high-content, battery powered applications is described. The PowerPC core and caches achieve frequencies as high as 380 MHz at a supply of 1.8 V and active power consumption as low as 53 mW at a supply of 1.0 V. The system executes up to 500 MIPS and can achieve standby power as low as 54 /spl mu/W. Logic supply changes as fast as 10 mV//spl mu/s are supported. A low-voltage PLL supplied by an on-chip regulator, which isolates the clock generator from the variable logic supply, allows the SOC to operate continuously while the logic supply voltage is modified. Hardware accelerators for speech recognition, instruction-stream decompression and cryptography are included in the SOC. The SOC occupies 36 mm/sup 2/ in a 0.18 /spl mu/m, 1.8 V nominal supply, bulk CMOS process.     

Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensing

In this study, organic field-effect transistors (OFETs) with extended gate structure were fabricated for selective pH sensing applications. Indium tin oxide (ITO) was used as extended gate electrode as well as an active layer for H⁺ sensing. The threshold voltage of the fabricated ion-selective OFET was varied by the changes in the electrochemical potential at the ITO electrode surface upon its exposure to buffer solutions with variable pH values. The sensor showed excellent linearity and a high sensitivity of 57–59 mV/pH in the pH range of 2–12. The selectivity of the ITO sensing layer to H⁺ ions was also investigated by measuring the interfering effect of Ca²⁺ and K⁺ ions in the buffer pH solutions. The results showed that the Ca²⁺ and K⁺ ions weakly interfere with the selective pH sensing of the ITO-extended gate OFET sensor device.