Interfacial Reactions of Sn, Sn-3.0Ag-0.5Cu, and Sn-9Zn Lead-Free Solders with Fe-42Ni Substrates

Interfacial reactions between Sn, Sn-3.0 wt.%Ag-0.5 wt.%Cu (SAC), and Sn-9 wt.%Zn (SZ) lead-free solders and Fe-42 wt.%Ni (alloy 42) substrates at 240°C, 255°C, and 270°C were investigated in this study. FeSn₂, (Fe,Ni, Cu)Sn₂, and (Ni,Fe)₅Zn₂₁ phases were formed, respectively, at the interface in the Sn/alloy 42, SAC/alloy 42, and SZ/alloy 42 couples. As the reaction time and temperature were increased, the layered intermetallic compound (IMC) assumed two distinct structures, i.e., a thicker layer and a pillar-shaped IMC, in all couples. The IMC thickness of these couples increased with the increase of reaction time and temperature. The IMC thickness was also proportional to the square root of the reaction time. The interfacial reaction mechanism of these couples was diffusion controlled.     

Study of Millimeter-Wave Radar for Helicopter Assisted-Landing System

Landing helicopters on rough unprepared terrain has always been considered hazardous, since the massive dust cloud generated by wind drafts from the helicopter's rotors completely obstructs the pilot's view of the landing area. This article presents a performance assessment of a proposed millimeter-wave (MMW) three-dimensional imaging radar system, specifically meant for helicopter assisted landing. The assessment includes simulation of radar backscattering from the underlying rough terrain, in addition to the signal attenuation and scattering from dust clouds generated by the helicopter's rotors. Terrain scattering is simulated in two steps: 1) generation of a two-scale random rough surface according to prescribed statistics of a large-scale undulation and a small-scale surface roughness; and 2) simulation of the returned signal, including the effects of the real-aperture radar parameters and the terrain-backscatter response. Details of the three-dimensional imaging algorithm are presented. Single-scattering theory is used to simulate the effects of a dust cloud - including signal attenuation and backscatter clutter generation - on the radar's performance. It is shown that operating in the upper millimeter-wave regime (70 GHz-220 GHz) is the most practical solution for a compact, high-resolution, three-dimensional imaging system for this problem.     

Efficient calculation of the fields of a dipole radiating above an impedance surface

The classic problem of field computation for an infinitesimal dipole radiating above an impedance half-space is revisited. The expressions for the traditional solution consist of integrals of the Sommerfeld type that cannot be evaluated in closed form and due to their highly oscillatory nature are difficult to evaluate numerically. A method known as exact image theory, which has previously been applied to vertical electric and magnetic dipoles, is used to derive explicit expressions for dipoles of arbitrary orientation above impedance surfaces. Starting from the spectral representation of the field, the reflection coefficients are cast in the form of exact Laplace transforms and then by changing the order of integrations field expressions in terms of rapidly converging integrals are obtained. These expressions are exact, and valid for any arbitrary source alignment or observation position. It is shown that the formulation for a horizontal dipole contains an image in the conjugate complex plane resulting in a diverging exponential term not previously addressed in the literature. It is shown through further mathematical manipulations, that the diverging term is a contribution of the mirror image which can be extracted. Comparison of numerical results from exact image theory and the original Sommerfeld-type expressions shows good agreement as well as a speedup in computation time of many orders of magnitude, which depends on the distance between the transmitter and the receiver. This formulation can effectively replace the approximate asymptotic expressions used for predicting wave propagation over a smooth planar ground (having different regions of validity). The exact image formulation is also of practical use in evaluation of the Green's function for various applications in scattering problems where approximate solutions are not sufficient.     

Design of an efficient miniaturized UHF planar antenna

The design aspects and the measured results of a novel miniaturized planar antenna are described. Such architectural antenna design is of great importance in mobile military communications where low visibility and high mobility are required. Slot radiating elements, having a planar geometry and capable of transmitting vertical polarization when placed nearly horizontal, are appropriate for the applications at hand. Slot antennas also have another useful property, so far as impedance matching is concerned. Basically, slot dipoles can easily be excited by a microstrip line and can be matched to arbitrary line impedances simply by moving the feed point along the slot. Antenna miniaturization can be achieved by using a high permittivity or permeability substrate and superstrate materials and/or using an appropriate antenna topology. We demonstrate miniaturization by designing an appropriate geometry for a resonant narrow slot antenna. A very efficient radiating element that occupies an area as small as 0.12/spl lambda//sub 0//spl times/0.12/spl lambda//sub 0/ is designed and tested. Simulation results, as well as the measured input impedance and radiation patterns of this antenna, are presented. This structure shows a measured gain of 0.5 dBi on FR4 substrate, which has a loss-tangent of the order of 0.01. Also, the effect of finite ground plane size on gain and resonant frequency is investigated experimentally.     

A 12-36GHz PHEMT MMIC balanced frequency tripler

A novel configuration of balanced frequency InGaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) tripler is proposed. A resonant LC filter is used to eliminate the fundamental frequency and a phase delay line is employed to suppress the second harmonic. The separation of the independent phase shifters makes the tripler more compact and flexible. The conversion loss of the tripler operating from 12 to 36GHz is less than 9.4dB at 9-dBm input power. As compared to the third-harmonic frequency, the fundamental frequency is suppressed more than 21.4dB while for the second harmonic is more than 22.3dB at 36GHz.     

Microwave Performance of Double δ-Doped High Electron Mobility Transistor With Various Lower/Upper Planar-Doped Ratio Designs

The microwave noise, power, and linearity characteristics of pseudomorphic high electron mobility transistors (pHEMTs) with various lower/upper planar delta-doped ratios were systematically evaluated and studied. By varying the lower/upper delta-doped ratio from 1:1 to 1:4, both Schottky gate turn-on voltage V_ON and breakdown voltage V_BR were reduced. In addition, higher upper delta-doped design is effective in improving the device current density, transconductance, output power, and power-added efficiency; however, this design also scarified the flatness of transconductance distribution and Schottky performance, resulting in a degradation of device linearity. As to the noise performance, after increasing the upper delta-doped concentration by more than 2 times 10¹² cm^-2, the minimum noise figure NF_min can be reduced to a stable range, and higher current density cannot efficiently improve the noise performance. Although the 1:4 design provided the largest power density of pHEMT, its high gate leakage current at high input power swing limited its linearity, and 1:3 design achieved the best linearity performance.     

A Frequency Selective Surface With Miniaturized Elements

We demonstrate a new class of bandpass frequency selective surface (FSS), the building block of which, unlike the traditional FSSs, makes use of resonant dipole and slot structures that have dimensions much smaller than the operating wavelength. This design allows localization of bandpass characteristics to within a small area on the surface which in turn facilitates flexible spatial filtering for an arbitrary wave phasefront. The proposed FSS is made up of periodic array of metallic patches separated by thin air-gaps backed by a wire mesh having the same periodicity (Ltlambda). The array of metallic patches constitute a capacitive surface and the wire mesh a coupled inductive surface, which together act as a resonant structure in the path of an incident plane wave. Like traditional FSSs, the capacitive and inductive surfaces of the proposed FSS can easily be fabricated using printed circuit technology on both sides of microwave substrates. It is shown that by cascading such bandpass surfaces in a proper fashion, any arbitrary multipole filter or non-commensurate multiband response can be obtained. The frequency response of the proposed miniaturized-element frequency selective surface (MEFSS) is demonstrated for various incident angles and it is shown that one-pole designs are less sensitive than two-pole designs to the angle of incidence. Dual band designs are also possible based on two-pole designs, but are more sensitive to incident angle than single band designs because of their larger (in terms of wavelengths) spacing. Prototypes of single-pole and dual-pole MEFSSs are fabricated and tested in a waveguide environment at X-band frequencies and excellent agreements between the measured and simulated results are demonstrated     

An investigation of surface state capture cross-sections for metal–oxide–semiconductor field-effect transistors using HfO2 gate dielectrics

MOSFETs and MOSCs incorporating HfO₂ gate dielectrics were fabricated. The I_DS–V_DS, I_DS–V_GS, gated-diode and C–V characteristics were investigated. The subthreshold swing and the interface trap density were obtained. The surface recombination velocity and the minority carrier lifetime in the field-induced depletion region measured from the gated diodes were about 2.73 × 10³ cm/s and 1.63 × 10⁻⁶ s, respectively. The effective capture cross section of surface state was determined to be 1.6 × 10⁻¹⁵ cm² using the gated-diode technique in comparison with the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO₂ gate oxide was also made.     

Developments and Applications of Data Deidentification Technology under Big Data

In this age characterized by rapid growth in the volume of data, data deidentification technologies have become crucial in facilitating the analysis of sensitive information. For instance, healthcare information must be processed through deidentification procedures before being passed to data analysis agencies in order to prevent any exposure of personal details that would violate privacy. As such, privacy protection issues associated with the release of data and data mining have become a popular field of study in the domain of big data. As a strict and verifiable definition of privacy, differential privacy has attracted noteworthy attention and widespread research in recent years. In this study, we analyze the advantages of differential privacy protection mechanisms in comparison to traditional deidentification data protection methods. Furthermore, we examine and analyze the basic theories of differential privacy and relevant studies regarding data release and data mining.