全文获取类型
收费全文 | 1159篇 |
免费 | 27篇 |
国内免费 | 4篇 |
专业分类
电工技术 | 32篇 |
化学工业 | 271篇 |
金属工艺 | 20篇 |
机械仪表 | 24篇 |
建筑科学 | 24篇 |
能源动力 | 21篇 |
轻工业 | 60篇 |
水利工程 | 3篇 |
无线电 | 148篇 |
一般工业技术 | 213篇 |
冶金工业 | 272篇 |
原子能技术 | 30篇 |
自动化技术 | 72篇 |
出版年
2023年 | 6篇 |
2022年 | 12篇 |
2021年 | 8篇 |
2020年 | 8篇 |
2019年 | 3篇 |
2018年 | 13篇 |
2017年 | 8篇 |
2016年 | 15篇 |
2015年 | 20篇 |
2014年 | 13篇 |
2013年 | 40篇 |
2012年 | 28篇 |
2011年 | 31篇 |
2010年 | 35篇 |
2009年 | 46篇 |
2008年 | 50篇 |
2007年 | 45篇 |
2006年 | 33篇 |
2005年 | 43篇 |
2004年 | 31篇 |
2003年 | 38篇 |
2002年 | 34篇 |
2001年 | 33篇 |
2000年 | 37篇 |
1999年 | 32篇 |
1998年 | 97篇 |
1997年 | 64篇 |
1996年 | 42篇 |
1995年 | 30篇 |
1994年 | 31篇 |
1993年 | 31篇 |
1992年 | 25篇 |
1991年 | 15篇 |
1990年 | 13篇 |
1989年 | 21篇 |
1988年 | 16篇 |
1987年 | 11篇 |
1986年 | 9篇 |
1985年 | 20篇 |
1984年 | 16篇 |
1983年 | 11篇 |
1982年 | 10篇 |
1981年 | 16篇 |
1980年 | 12篇 |
1979年 | 5篇 |
1978年 | 5篇 |
1977年 | 9篇 |
1976年 | 8篇 |
1974年 | 5篇 |
1973年 | 2篇 |
排序方式: 共有1190条查询结果,搜索用时 15 毫秒
991.
Shinya Ito Hiroaki Namba Tsuyoshi Hirata Koichi Ando Shin Koyama Nobuyuki Ikezawa Tatsuya Suzuki Takehiro Saitoh Tadahiko Horiuchi 《Microelectronics Reliability》2002,42(2):201-209
This paper reports that process-induced mechanical stress affects the performance of short-channel MOSFETs, and focuses on the effect of a plasma-enhanced CVD nitride contact-etch-stop layer. The stress in the channel region induced by the nitride layer changes transconductance (Gm), thereby changing the device performance. When the nitride stress varies from +300 MPa (tensile) to −1.4 GPa (compressive), NMOSFET performance degrades by up to 8% and PMOSFET performance improves up to 7%. These changes are caused by the modulation of the electron/hole mobilities, so controlling process-induced stress and considering this mobility change in a precise transistor model are necessary for deep-submicron transistor design. 相似文献
992.
993.
N Hanioka H Jinno T Tanaka-Kagawa T Nishimura M Ando 《Canadian Metallurgical Quarterly》1998,28(7):683-698
1. We examined the effect of two chloro-s-triazines (atrazine and simazine) on hepatic microsomal cytochrome P450 enzymes in rat. Rats were treated intraperitoneally with atrazine or simazine daily for 3 days with 100, 200 and 400 mumol/kg. 2. Among the P450-dependent monooxygenase activities, testosterone 2 alpha-hydroxylase (T2AH) activity in rat, which is associated with CYP2C11, was significantly decreased at all doses of atrazine and simazine. The levels relative to control activities were 59-46 and 60-32% respectively. Similarly, oestradiol 2-hydroxylase (ED2H) activity was also significantly decreased by 28-51% by atrazine and simazine at all doses. However, no change in CYP2C11 protein level by either chloro-s-triazine was observed. K(m) for T2AH was significantly increased only by simazine (200 mumol/kg), whereas the Vmax and Cl(int) for T2AH were significantly decreased by atrazine and simazine at all doses. 3. 7-Ethoxyresorufin O-deethylase (EROD), 7-methoxyresorufin O-demethylase (MROD) and 7-pentoxyresorufin O-depentylase (PROD) activities were significantly increased by 1.4-1.6-, 1.7-3.2- and 1.5-2.2-fold respectively, by both chloro-s-triazines at 200 or 400 mumol/kg. Lauric acid omega-hydroxylase (LAOH) was also increased by 1.4-fold by simazine at 200 and 400 mumol/kg. Immunoblotting showed that only simazine induces CYP1A2 and CYP4A1/2 protein expression. 4. The activities of 7-ethoxycoumarin O-deethylase (ECOD), bufuralol 1'-hydroxylase (BF1'H), chlorzoxazone 6-hydroxylase (CZ6H), testosterone 6 beta-hydroxylase (T6BH) and testosterone 7 alpha-hydroxylase (T7AH) were not affected by either chloro-s-triazine. 5. These results suggest that the pattern of changes in P450 isoforms by chloro-s-triazines differs between atrazine and simazine, that these herbicides change the constitutive and/or male specific P450 isoform(s) in rat liver, and that these changes closely relate to the toxicity of chloro-s-triazines. 相似文献
994.
Yamagata Shinji; Suzuki Atsunobu; Ando Juko; Ono Yutaka; Kijima Nobuhiko; Yoshimura Kimio; Ostendorf Fritz; Angleitner Alois; Riemann Rainer; Spinath Frank M.; Livesley W. John; Jang Kerry L. 《Canadian Metallurgical Quarterly》2006,90(6):987
This study examined whether universality of the 5-factor model (FFM) of personality operationalized by the Revised NEO Personality Inventory is due to genetic influences that are invariant across diverse nations. Factor analyses were conducted on matrices of phenotypic, genetic, and environmental correlations estimated in a sample of 1,209 monozygotic and 701 dizygotic twin pairs from Canada, Germany, and Japan. Five genetic and environmental factors were extracted for each sample. High congruence coefficients were observed when phenotypic, genetic, and environmental factors were compared in each sample as well as when each factor was compared across samples. These results suggest that the FFM has a solid biological basis and may represent a common heritage of the human species. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
995.
996.
K Mitsumori M Shibutani S Sato H Onodera J Nakagawa Y Hayashi M Ando 《Canadian Metallurgical Quarterly》1998,72(9):545-552
We wished to clarify the relationship between the sensitivity to induce hepato-renal toxicity and the level of cadmium (Cd) in the organs of rats exposed to minimum to large amounts of cadmium chloride (CdCl2). For this purpose, groups of female Sprague-Dawley (SD) rats, each consisting of 24 animals, were fed diet containing CdCl2 at concentrations of 0, 8, 40, 200, and 600 ppm for 2, 4, and 8 months from 5 weeks of age. All surviving rats given 600 ppm Cd were killed at 4 months because of deterioration of their general condition. Animals of this group showed anemia and decreased hematopoiesis in the bone marrow, in addition to reduction of cancellous bone in their femurs. Hepatotoxicity was observed after 2 months in the groups treated with > or = 200 ppm. By 4 months, the rats in the 600 ppm group had developed periportal liver cell necrosis. Renal toxicity characterized by degeneration of proximal tubular epithelia was apparent in the groups treated with > or = 200 ppm from 2 months, becoming more prominent in the high-dose rats at 4 months. Hepatic accumulation of Cd increased linearly with the duration of treatment. In contrast, the concentration of Cd in the renal cortex of rats treated with 600 ppm reached a plateau level of approximately 250 microg/g within the first 2 months. The renal concentration of Cd in the 200 ppm group when renal toxic lesions were first detected at 2 months ranged from 104 to 244 microg/g. No renal lesions were observed in the 40 ppm group after 8 months, despite the presence of 91-183 microg/g of Cd in the kidneys. The results thus suggest that renal toxicity would not be induced by treatment with minimum amounts of CdCl2 for periods longer than 8 months, although accumulation of Cd might gradually progress. A further 2-year feeding study of CdCl2 and Cd-polluted rice is now in progress. 相似文献
997.
A new optical interface called OptoBump has been developed to couple optoelectronic packages to an optoelectronic printed circuit board, thus enabling economical chip-to-chip optical interconnections. The optoelectronic packages have vertical-cavity surface-emitting laser (VCSEL) and PD-array chips in their cavity and an large scale integrated (LSI) mounted on top. A package converts high-speed electrical signals from the LSI into an array of optical signals, which are emitted from the bottom. The PCB contains integrated polymer optical waveguides to optically connect packages, and the use of surface-mount technology (SMT) to mount packages on the printed circuit board (PCB) keeps assembly costs low. The key to making the OptoBump interface fully compatible with SMT is the integration of microlens arrays directly into both packages and the PCB. A wide, collimated optical beam couples a package to the board across a narrow air gap and provides a large tolerance to misalignment during the SMT process. This paper explains the concept of the OptoBump interface, the optical coupling design by ray-trace simulation, and the fabrication of polymer microlenses and polymer waveguides. Experimental results revealed that the OptoBump interface provides a large tolerance of /spl plusmn/50 /spl mu/m, which is large enough for use with SMT. The OptoBump interface can replace high-speed electrical wiring at the chip level and also offers the benefit of not having any optical fibers or connectors on the board. Thus, it has the potential to bring about a revolutionary change in optoelectronic packaging. 相似文献
998.
Koji Takahashi Akihiko Kato Kotoji Ando Masakazu Hisatsune Kunio Hasegawa 《Nuclear Engineering and Design》2007,237(2):137-142
Monotonic four-point bending tests were conducted using tee pipe specimens having local wall thinning. The effects of local wall thinning on the fracture behaviors of tee pipes were investigated. Local wall thinning was machined on the inside of pipes in order to simulate metal loss due to erosion corrosion. The configurations of the eroded area were l = 100 mm in eroded axial length, d/t = 0.5 and 0.8 in eroded ratio, and 2θ = 90° in eroded angle. The area undergoing local wall thinning was subjected to either tensile or compressive stress. It was found that the type of fracture could be classified into ovalization, local buckling, and crack initiation, depending on pipe shape, eroded ratio, and stress at the eroded area. Fracture behaviors of the tee pipes were compared with those of straight pipes. Three-dimensional elasto-plastic analyses were also carried out using the finite element method, which was able to accurately simulate fracture behaviors. 相似文献
999.
Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate 总被引:5,自引:0,他引:5
Okamoto Y. Ando Y. Hataya K. Nakayama T. Miyamoto H. Inoue T. Senda M. Hirata K. Kosaki M. Shibata N. Kuzuhara M. 《Microwave Theory and Techniques》2004,52(11):2536-2540
A recessed-gate AlGaN-GaN field-modulating plate (FP) field-effect transistor (FET) was successfully fabricated on an SiC substrate. By employing a recessed-gate structure on an FP FET, the transconductance was increased from 150 to 270 mS/mm, leading to an improvement in gain characteristics, and current collapse was minimized. At 2 GHz, a 48-mm-wide recessed FP FET exhibited a record output power of 230 W (4.8 W/mm) with 67% power-added efficiency and 9.5-dB linear gain with a drain bias of 53 V. 相似文献
1000.
Uchida H. Kamino H. Totani K. Yoneda N. Miyazaki M. Konishi Y. Makino S. Hirokawa J. Ando M. 《Microwave Theory and Techniques》2004,52(11):2550-2556
A novel concept of dual-band-rejection filter (DBRF) is proposed with its circuit synthesis procedure and examples of its realization with dielectric resonators and microstrip resonators. A DBRF can make two closely spaced rejection bands and a passband between them, with lower loss than a bandpass filter having the same number of resonators and the same frequency selectivity just around the passband. The DBRF can be synthesized by applying novel frequency-variable transformations to a prototype LPF, and its physical size can be smaller than a simple cascade of two conventional band-rejection filters with different rejection bands. The DBRF can be especially applicable to distortion reduction filter in RF transmitters. 相似文献