DefibViz: A Visualization Tool for the Assessment of Electrode Parameters on Transthoracic Defibrillation Thresholds

DefibViz is a software application developed for defibrillation simulation and visualization. It exploits both surface techniques and methods for the interactive exploration of volumetric datasets for the analysis of transthoracic defibrillation simulation results. DefibViz has a graphical user interface for the specification of the shape, size, position, and applied voltage of a defibrillator's electrodes. An option is provided for using 3D slice plane widgets, which operate on the volumetric datasets, such that the distribution of the voltage gradient induced by an electric shock can be visually inspected in various tissues throughout the myocardium and torso. One goal of DefibViz is to enhance understanding of how electrode parameters relate to the change of the voltage gradient distribution throughout the heart, which may help lead to optimal defibrillator design. DefibViz is significant, in that, it is built by using an open-source graphics and visualization framework providing a platform for subsequent modifiability and extensibility. Moreover, it integrates simulation and visualization techniques, which previously required the running of several independent software executables, into an enhanced, seamless, and comprehensive software application.     

Development and evaluation of antimicrobial natamycin‐incorporated film in gorgonzola cheese conservation

Conservation of food products depends on product quality and packaging suitability. The objective of this work was to develop and evaluate the antimicrobial efficiency of natamycin‐incorporated film in the production process of Gorgonzola cheese. It aims to optimize the production process and increase shelf‐life and food safety for the consumer. Films with different concentrations of natamycin were produced and tested in Gorgonzola cheeses to evaluate its efficiency against Penicillium roqueforti on the cheese surface. Films with 2 and 4% natamycin presented satisfactory results for fungus inhibition and the amount of natamycin released to the cheese was below that allowed by the legislation. Copyright © 2006 John Wiley & Sons, Ltd.     

Compensation of the Piezo-Hall Effect in Integrated Hall Sensors on (100)-Si

Silicon Hall sensors are known to suffer from a long-term drift in the magnetic sensitivity between 1% and 4%, depending on the degree of moisture in the mold compound of the package. This drift is mainly caused by changes of mechanical stress exerted by the plastic package onto the die. We present a system, which continuously measures the relevant stress components, estimates the sensitivity drift, and corrects for it digitally. An individual precalibration versus temperature is necessary to achieve the required level of accuracy. Results from laboratory characterization with pressure cells and lifetime drift during qualification runs show that this system can keep the drift of magnetic sensitivity well below 1%.     

Online monitoring by dynamically refining imprecise models

Model-based monitoring determines faults in a supervised system by comparing the available system's measurements with a priori information represented by the system's mathematical model. Especially in technical environments, a monitoring system must be able to reason with incomplete knowledge about the supervised system, to process noisy and erroneous observations and to react within a limited time. We present MOSES, a model-based monitoring system which is based on imprecise models where the structure is known and the parameters may be imprecisely specified by numerical intervals. As a consequence, only bounds on the trajectories can be derived with imprecise models. These bounds are computed using traditional numerical integration techniques starting from individual points on the external surface of the model's uncertainty space. When new measurements from the supervised system become available, MOSES checks the consistency of this new information with the model's prediction and refutes inconsistent parts from the uncertainty space of the model. A fault in the supervised system is detected when the complete model's uncertainty space has been refuted. MOSES bridges and extends methodologies from the FDI and DX communities by refining the model's uncertainty space conservatively through refutation, by applying standard numerical techniques for deriving the trajectories of imprecise models and by exploiting the measurements as soon as possible for online monitoring. The performance of MOSES is evaluated based on examples and by online monitoring a complex heating system.     

Spannungsintensitätsfaktoren für vollständig umlaufende Oberflächenumfangsrisse in Rohren bei Thermoschockbelastung

Stress Intensity Factors for Complete Circumferential Surface Cracks in Thermally Shocked Pipes In the case of an emergency cooling of a reactor thermal stresses are generated in the pipes of the primary loop, which may be described conservatively as a thermal shock problem. In this paper complete interior circumferential surface cracks loaded by these thermal stresses are considered. By means of the weight function method stress intensity factors were calculated for this loading case.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Structure determination of CaMgGeO4

The crystal structure of CaMgGeO₄ is described. CaMgGeO₄, M_r = 200.9, orthorhombic, Pnam, A = 11.285(5) Å, B = 5.016(2) Å, C = 6.435(2) Å, V = 364.36 ų, Dx = 3.664 Mg/m³.λ(MoK_a = 0.71069 Å, F(000) = 384, room temperature, final R = 0.045 for 1752 observed reflections. The structure is isomorphous with CaMgSiO₄ (monticellite).     

Energy efficiency, carbon emissions and economic development in Venezuela

Venezuela's vast natural resource base has largely shaped the nation's economic and energy-use patterns. Major opportunities exist for improving the efficiency of energy use in Venezuela and, consequently, restraining the growth of energy-related carbon emissions. This paper presents a detailed report of one potential development path for Venezuela and estimates the ensuing levels of energy demand and CO₂ emissions associated with pursuing this path through the year 2025. The results indicate that by adopting a development strategy that incorporates structural changes in the economy, fuel-switching measures and improved end-use efficiencies, Venezuela can introduce energy efficiency and carbon restraints as part of its economic development process.