Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Effect of precyclic loading on stress-corrosion-cracking initiation in an X-65 pipeline steel exposed to near-neutral pH soil environment

A study was carried out to understand the effect of precyclic loading on stress-corrosion-crack initiation in an X-65 pipeline steel exposed to a near-neutral-pH soil environment. The test specimens were precyclically loaded before corrosion exposure to represent a service history of up to about 20 years, depending on the severity of pressure fluctuation. Microcracks had initiated on the polished surface of the X-65 pipeline steel after long-time exposure at open-circuit potential (OCP) in a near-neutral-pH synthetic soil solution. These microcracks were mostly initiated from pits at metallurgical discontinuities such as grain boundaries, pearlitic colonies, and banded phases in the steel. Strong preferential dissolution was observed along planes of the banded structures in the steel. The selective corrosion attack at these metallurgical discontinuities is attributed to the galvanic nature of those areas to their neighbors. Cyclic loading prior to corrosion exposure had significant effects on microcrack initiation and propagation during subsequent corrosion exposure. Cyclic loading prior to corrosion exposure either reduced or increased the probability of crack initiation and the rate of crack propagation, depending upon the magnitude of the stress cycles. The largest reduction was seen at a peak cyclic stress of about 0.8 of the yield strength. This cyclic-loading-dependent cracking behavior might be related to the alteration of the substructures and the residual stress in the steel as a result of precyclic loading.     

Primer-induced labeling of pea and field bean chromosomes in situ and in suspension

A protocol for primed in situ DNA labeling (PRINS) was optimized for pea (Pisum sativum L.) and field bean (Vicia faba L.) chromosomes attached to coverslips. Cloned DNA or synthetic oligonucleotides were used as probes for repetitive DNA sequences (rDNA, Fok-element) and different reaction conditions were tested to achieve the highest specific signal-to-background ratio. A procedure based on direct labeling by fluorescein-dUTP was compared with an indirect one using digoxigenin detected by fluorescently labeled antibody. Under optimal conditions, strong and specific signals were obtained exclusively on chromosome regions known to contain respective DNA sequences. Compared to the direct labeling, significantly stronger signals were obtained when the indirect procedure was used. Both types of labeling were successfully applied to chromosomes in suspension and were shown to produce signals comparable to that obtained with chromosomes attached to coverslips. It is expected that primed in situ DNA labeling en suspension (PRINSES) will provide a basis for flow-cytometric discrimination and sorting of otherwise indistinguishable chromosomes according to their specific fluorescent labeling.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Mesa and planar SiGe-HBTs on MBE-wafers

SiGe-HBTs have the potential for outstanding analog and digital or mixed-signal high frequency circuits widely based on standard Si technology. Here we review on MBE grown transistors and circuits. Processes and results of a research-like SiGe HBT and two possible production relevant HBT versions are presented. The high frequency results with f_max and f_T up to 120 GHz and a minimum noise figure of 0.9 dB at 10 GHz demonstrate the advantage of using MBE samples with steep and high base doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base layers, realized by UHV-CVD, is given. In addition, some circuit demonstrators of SiGe-ICs will be presented.     

Dynamic Bending Strains in Planar Trusses with Pinned or Rigid Joints

The method of reverberation ray matrix is applied to analyze the dynamic behavior of structural members in trusses with pinned joints subjected to suddenly applied force. The results are compared with those in planar trusses with rigid joints. Detailed calculations are made with two types of trusses, a small laboratory model made of slender aluminum bars, and a hypothetical real size Pratt truss made of structural steel. It is found that the maximum dynamic bending strains in the members of both types of trusses are very large, comparable with the dynamic axial strains in the same member. The magnitudes of bending strains in the pinned truss differs little from those in the truss with rigid joints for both types of trusses. Such a large dynamic bending strain in a structure member, which is contradictory to the static behavior of the same truss, could be caused by the inertial force of the mass in structural members of the truss.     

An improved covariance assignment theory for discrete systems

For discrete systems, the set of all state covariances X which can be assigned to the closed-loop system via a dynamic controller is characterized explicitly. For any assignable state covariance X , the set of all controllers that assign this X to the closed-loop system is parameterized with an arbitrary orthonormal matrix U of proper dimension     

Radiale Wärmeleitung in durchströmten Schüttungsrohren

Heat Transport to the Wall of Packed Tubes. Radial conduction of heat in packed tubes has a crucial influence on yield and selectivity of many heterogeneously catalyzed reactions. In spite of many years of intensive research in the field, there are still tremendous discrepancies between correlations of different origin. Even the standard model using two constant heat transport parameters, which was introduced in the fifties and has since become most widely accepted, has been controversially discussed and called into question. The unsatisfactory state of the art has been an incentive for several groups of researchers to take up this old topic once again. Three parallel experimental investigations on heat transport with air flowing in packed tubes of similar dimensions, electrically heated, steam-heated, or water-cooled, were completed in 1991. Comparative evaluation of the results of these three investigations, together with other data from the relevant literature, now provides the first clear answers to some of the questions so controversially discussed in the past.