排序方式: 共有30条查询结果,搜索用时 31 毫秒
11.
A. A. Usikova N. D. Il’inskaya B. A. Matveev T. V. Shubina P. S. Kop’ev 《Semiconductors》2013,47(12):1570-1573
A method for the fabrication of 2D periodic structures by contact optical photolithography with image inversion is reported. The optical properties of photonic crystals and Bragg gratings for mid-IR and terahertz emitters are considered. The possibility of raising the integral emission intensity of light-emitting diodes for the mid-IR spectral range is demonstrated. The requirements to gratings for the output of terahertz emission generated by surface plasmons excited in layers of narrow-gap degenerate semiconductors with an accumulation layer are determined. 相似文献
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V. V. Mamutin A. P. Vasil’ev A. V. Lyutetskii N. D. Il’inskaya A. A. Usikova Yu. M. Zadiranov N. A. Maleev A. N. Sofronov D. A. Firsov L. E. Vorob’ev V. M. Ustinov 《Technical Physics Letters》2018,44(9):814-816
We report on room-temperature generation at the 4.8-μm wavelength in a lattice-matched structure of a quantum cascade laser (QCL) grown on indium phosphide (InP) substrate. Laser heterostructures grown by molecular beam epitaxy (MBE) comprised 30 cascades and were designed to generate at the 4.80 μm wavelength corresponding to an atmospheric transparency window. Experiments demonstrated effective lasing at temperatures from 80 to 300 K on a wavelength coinciding with the calculated value, which confirmed the high quality of interfaces, high precision of layer thicknesses, and high accuracy of active region doping. 相似文献
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M. S. Kagan I. V. Altukhov A. N. Baranov N. D. Il’inskaya S. K. Paprotskiy R. Teissier A. A. Usikova 《Semiconductors》2013,47(11):1478-1480
Vertical transport in short-period InAs/AlSb superlattices with type-II heterojunctions is studied at room temperature. It is found that negative differential conductivity appears in the miniband-conduction mode upon the overlapping of quantum-confined states in a periodic system of quantum wells. In the nonresonant-tunneling mode, equidistant peaks appear on the current-voltage characteristic of these superlattices. These peaks are attributed to the influence of the optical cavity on optical electron transitions in quantum wells (Purcell effect). 相似文献
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Ya. V. Terent’ev A. A. Toropov B. Ya. Meltser A. N. Semenov V. A. Solov’ev I. V. Sedova A. A. Usikova S. V. Ivanov 《Semiconductors》2010,44(2):194-197
GaAs/GaSb type-II quantum-dot heterostructures were grown by molecular-beam epitaxy. The circularly polarized photoluminescence
of these samples in a magnetic field up to 4.7 T in the Faraday configuration was investigated. It was found that the emission
from quantum dots in a magnetic field is σ−-polarized, which corresponds to the electron-spin component along the magnetic-field vector of +1/2. The degree of polarization
increases with increasing excitation intensity. The observed effect is explained in terms of spin injection from the GaSb
matrix, where spin orientation appears owing to the Zeeman splitting of the conduction band. An increase in the degree of
polarization occurs due to a reduction in the charge-carrier radiative lifetime in type-II quantum dots with increasing excitation
level. 相似文献
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Vasilyeva G. Yu. Greshnov A. A. Vasilyev Yu. B. Mikhailov N. N. Usikova A. A. Haug R. J. 《Semiconductors》2019,53(7):930-935
Semiconductors - The longitudinal and Hall components of the resistivity tensor are measured in structures with multiple HgTe layers 16 nm thick in magnetic fields to 12 T at temperatures from 1.5... 相似文献
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Soldatenkov F. Y. Sorokina S. V. Timoshina N. Kh. Khvostikov V. P. Zadiranov Y. M. Rastegaeva M. G. Usikova A. A. 《Semiconductors》2011,45(9):1219-1226
The transmission-line model with radial and rectangular geometry of contact pads has been used to study the contact systems
Cr-Au, Cr-Au-Ag-Au, Ti-Pt-Au, Pt-Ti-Pt-Au, Pt-Au, Ti-Au, Ti-Pt-Ag, Ti-Pt-Ag-Au, and Pt-Ag deposited on the p-GaSb surface by the methods of magnetron sputtering and resistive evaporation. It is established that the contact systems
Ti-Pt-Ag-Au and Ti-Pt-Ag exhibit the smallest values of the specific contact resistance (ρ
c
≤ 10−6 Ω cm2), which makes it possible to use these systems in fabrication of photovoltaic converters generating photocurrents with densities
as high as 15 A/cm2. 相似文献
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Yu. M. Zadiranov N. V. Zotova N. D. Il’inskaya S. A. Karandashev B. A. Matveev M. A. Remennyĭ N. M. Stus’ A. A. Usikova 《Technical Physics Letters》2008,34(5):405-407
It is established that a periodic relief (photonic crystal) created on the surface of an indium arsenide crystal influences the reflection coefficient and the intensity of mid-IR radiation with λ = 3.3–3.6 μm emitted from the active region of an optically pumped InAs-based light-emitting diode. 相似文献
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