贵欧泊合成的某些方面

描述了在俄罗斯Dubna应用研究中心合成全硅欧泊的开发研究以及基本步骤. 阐述了这种漂亮的、相对无孔隙的合成欧泊的结构和基本特征以及这种合成欧泊切磨和抛磨的例子.     

Special numbers,still proceedings,other novelties

Modifications of solid water and their transitions are described as they relate to cryo electron microscopy. In particular, the various amorphous states (amorphous polymorphs) as they exist below 100 K are extensively investigated. The “high-density” midification exhibits a lower viscosity than the “low-density” form. Differences are also observed in the mechanism of void formation due to electron irradiation: in the high-density form, voids are formed — not, however, in the low-density form. Together with the reaction to radiation damage, the physical properties of amorphous solid water are discussed with respect to embedding of organic specimens. Finally, the conditions and pitfalls associated with preparation of thin and entirely vitrified ice layers by shock-freezing are described.     

Tube-shaping unit — A way of improving the quality of shaped tubes

Lenin Dnepropetrovsk Pipe Plant. Translated from Metallurg, No. 8, p. 39, August, 1989.     

Analytic approach to the computation of the temperature distribution in multilayer structures under heating by cw scanning laser radiation

By using integral transform methods, an approach is developed to the solution of a problem on the temprature distribution in multilayer structures heated by cw scanning laser radiation, with phase transitions in the layers taken into account.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 53, No. 6, pp. 1000–1010, December, 1987.     

Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices