Control of peak sidelobe level in adaptive arrays

Adaptive beamforming techniques are now widely used to reject interference (jammer/clutter) signals in radar, communication, and sonar applications. In adaptive arrays using the sample matrix inversion (SMI) algorithm, inadequate estimation of the covariance matrix results in adaptive antenna patterns with high sidelobes and distorted mainbeams. In this paper, a method is proposed to precisely control the peak (rather than average) sidelobe level of adaptive array patterns. The proposed method is also generalized to adaptive array antennas with moderate bandwidth and large random amplitude and phase errors. Theoretical analysis and simulation results are provided to illustrate the performance of the method proposed     

Structural and chemical analysis of C : H,O /Si : H,O multilayers deposited by reactive RF sputtering

Hydro-oxygenated carbon (C : H,O) and silicon (Si : H,O) layers are deposited by RF sputtering of graphite and silicon targets in a mixture of argon, hydrogen and oxygen gases. C : H,O/Si : H,O/C : H,O/Si : H,O... multilayers are obtained by sequential deposition of C : H,O and Si : H,O layers. Infrared (IR) spectroscopy, Grazing Incidence X-ray Diffraction (GIXD) and X-ray Photoelectron Spectroscopy (XPS) techniques have been used to analyse the formed multilayers. The IR spectra made on as deposited structures show the presence of Si---C, Si---O, C---O, Si---H, C---H and C=C bonds. This result indicates an interfacial reactivity between Si : H,O and C : H,O layers. The latter result is confirmed by the XPS measurements. After an annealing at 850°c for two hours under argon atmosphere (10^-3 mbar), the concentration of the Si---C bonds is increased by a factor two while the Si---H and C---H bonds disappear complet The GIXD measurements show that the multilayers are amorphous when annealed below 750°C, and they are crystallized with the formation of the α-SiC phase if the heat treatment is made at 850°C. The mean size of the microcrystallites is 50 Å about.     

一个可切实服务于运营商的移动无线因特网

本文在简单介绍了移动IP及其路由优化，无线局域网（WLAN）和GPRS的基础上，提出了一个新的利用移动IP来融合WLAN和GPRS的移动无线因特网的网络结构，详细论述了其多连接的路由过程，平滑垂直切换，AAA，并做了简要的性能分析。     

电子束和接触式曝光机的混合曝光技术

Ⅰ线光致抗蚀剂可以同时实用电子束和光学系统曝光，在50kV加速电压下，其曝光剂量为50-100μC/cm^2，曝光后在0.7%NaOH溶液内显影1分钟。其灵敏度比PMMA快5倍，分辩率为0.5μm。采用两方法制备CaAsPHEMT：一种用Ⅰ线光致抗蚀剂，对源、漏及栅全部都采用电子束曝光，制备了0.5μm栅长的GaAs PHEMT；另一种将源、漏及栅分割成两部分，其中精细部分由电子束曝光，其余部分由光学系统曝光，用这种方法制备了0.25μm栅长的GaAs PHEMT。Ⅰ     

基于POSC的测井曲线数据存储管理系统

在基于POSC标准的基础上，分析了POSC EPICENTER数据模型，对油田中普遍使用的LS716测井大块数据在磁盘和远程自动磁带库之间实现了一体化的数据管理，开发了数据加载，数据删除，头信息浏览线回施行能模块。该系统特点是，管理信息加载到POSC数据仓中，而真正的数据体以外部数据文件的形式存放，使得大块数据的加载和提取速度大大提高，同时，在数据仓库和远程带库之间实现了一体化的数据管理。     

CAD/CAM在注射模设计中的应用

以Pro/E、Moldflow软件为例,对CAD/CAM技术在注射模设计中的应用进行了研究和探讨,总结了使用该软件的一些体会,阐述了注射模CAD/CAM技术的发展趋势。     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively