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51.
52.
Neviani A. Meneghesso G. Zanoni E. Hafizi M. Canali C. 《Electron Device Letters, IEEE》1997,18(12):619-621
Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient αn in In0.53Ga0.47As at medium-low electric fields are reported for the first time. The increase of αn with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In0.53Ga 0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In0.53Ga 0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current 相似文献
53.
This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method 相似文献
54.
Fahmy H.I. Develekos G. Douligeris C. 《Selected Areas in Communications, IEEE Journal on》1997,15(2):226-237
Communication network design is becoming increasingly complex, involving making networks more usable, affordable, and reliable. To help with this, we have proposed an expert network designer (END) for configuring, modeling, simulating, and evaluating large structured computer networks, employing artificial intelligence, knowledge representation, and network simulation tools. We present a neural network/knowledge acquisition machine-learning approach to improve the END's efficiency in solving the network design problem and to extend its scope to acquire new networking technologies, learn new network design techniques, and update the specifications of existing technologies 相似文献
55.
Douay M. Xie W.X. Taunay T. Bernage P. Niay P. Cordier P. Poumellec B. Dong L. Bayon J.F. Poignant H. Delevaque E. 《Lightwave Technology, Journal of》1997,15(8):1329-1342
A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models 相似文献
56.
Cresswell M.W. Allen R.A. Guthrie W.F. Sniegowski J.J. Ghoshtagore R.N. Linholm L.W. 《Semiconductor Manufacturing, IEEE Transactions on》1998,11(2):182-193
The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features 相似文献
57.
Approaches to using visual language in a cultural context can be placed on a continuum, with global (universal) on one end and culture-focused on the other. Each approach reveals contrasting assumptions about three central design issues: perception, aesthetics and pragmatics. The global approach is characterized by attempts to invent an objective, universal visual language or to define such a language through perceptual principles and empirical research. The culture-focused perspective is founded on the principle that visual communication is intimately bound to experience and hence can function only within a given cultural context, to which designers must be sensitive. While the modernist, universal approach has been losing ground to the postmodern, culture-focused approach, the two complement each other in a variety of ways and, depending on the rhetorical situation, offer pragmatic benefits and drawbacks 相似文献
58.
Furst C. Leitenstorfer A. Laubereau A. 《IEEE journal of selected topics in quantum electronics》1996,2(3):473-479
An experimental and theoretical analysis of the nonlinear coupling mechanism between the two solitary pulses circulating in a two-color femtosecond laser is presented. Two operation regimes; synchronized; and nonsynchronized; and a hysteresis of the transition between the two regimes are clearly observed; while independent modelocking and tunability of the output pulse trains is found in both regimes. Pulses in the range from 15 to 100 fs are synchronized with a timing jitter below 2 fs. The combined effects of cross-phase modulation and negative group velocity dispersion are shown to be responsible for the strong pulse correlation in the synchronized regime. Our experimental observations are in agreement with numerical simulations, thus confirming the theoretical model 相似文献
59.
60.