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61.
Summary Starting with Z-2, 3-diamino-2-butenedinitrile as diamine component the synthesis of the low molecular N,N,O,O-chelate 3.Co and its ligand 3 is optimized. An easy synthesis of the chelate 8.Co covalently bound on macroreticular resins is presented. The chelates 8.Co are the most active heterogenous catalysts for the valence isomerization of quadricyclane to norbornadiene today. 相似文献
62.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
63.
64.
The dynamic linewidth of 1.5 ?m ridge waveguide DFB lasers is shown to be reduced by shaping the pulse of the laser modulating waveform. Pulse shaping is performed by a second-order network designed to cancel the small-signal laser resonance. Results demonstrate a dynamic linewidth reduction from 1.4 ? to 0.55 ? FWHM for a 500 ps pulse. 相似文献
65.
Ahn Jaeshin Stromsmoe Keith A. Lawson Ronald P. W. 《Industrial Electronics, IEEE Transactions on》1985,(4):405-409
A microprocessor-based system with 32 A/D, 24 D/A, and 16 ac load controllers, has been designed and built to monitor and control an ion beam thin-film deposition system. The A/D and D/A channels have electrical isolation of 7.5 kV between channels and between input and output. The microprocessor system keeps the ion beam deposition parameters stable for extended periods of operation and it is proposed as a means to greatly simplify switching from one deposition species to another to grow thin multilayer or alloy films. 相似文献
66.
Poly(vinyl alcohol) is crosslinked in dilute solution (c=0.1 wt%) with glutaraldehyde. The reaction product is characterized by viscometry and gel permeation chromatography (g.p.c.). The intrinsic viscosity decreases with increasing degree of crosslinking and does not depend on temperature. G.p.c. reveals that the reaction product is not homogeneous, but consists of a mixture of particles with different sizes, possibly both intra- and intermolecularly crosslinked molecules. The intramolecularly crosslinked molecules are smaller in size than the initial polymer molecules and their size depends on the degree of crosslinking. They possess a narrow particle size distribution even if the initial polymer sample had a broad molecular weight distribution. 相似文献
67.
It is suggested that the chord length distribution method could be useful for predicting double-bit upset rates in certain circumstances. A chord length distribution function for simultaneous path lengths in two parallelepipeds, applicable to a unidirectional flux, is derived. A proof of the system is outlined for the case under consideration 相似文献
68.
69.
M. Polák M. Majoro F. Hanic J. Pitel M. Kedrová P. Kottman J. Talapa L. Vencel 《Journal of Superconductivity》1989,2(2):219-233
A method for contactless measurement of the shielding critical current density and its dependence on the external magnetic field is described and analyzed. The obtained values are compared with those measured resistively on two different samples. It is shown that the shielding critical current densityJ
cs
and the intergranular transport current densityJ
cr
are identical if the measurement conditions are similar. A degradation ofJ
cs
measured in the external field with AC ripple has been observed. 相似文献
70.
Containment structures have several regions in which the continuity of the cylindrical pressure boundary is interrupted, e.g., shell penetrations, discontinuous stiffeners, and changes in the shell thickness. Significant strain concentrations can occur in these areas of discontinuity. The Sandia National Laboratories 1:8-scale steel containment equipment hatch was analyzed as an example of an eccentricity at a stiffener intersection.A portion of the as-built 1:8-scale model was modeled with the ANSYS general purpose finite element program using triangular, thin shell finite elements. The overall size of the model was determined from Saint-Venant type considerations of the stress field around the hatch. Shell elements were used to model the ring and formed stiffeners. Geometric and material nonlinear behavior were included. The model was loaded using discrete load steps up to a pressure of 165 psig. At this pressure, the maximum strain was 19.7 percent in the formed stiffener near its intersection with the ring stiffener. The finite element solution demonstrated the very localized nature of the strain field near the ring/formed stiffener intersection.In an attempt to reduce analysis costs, a small portion of the 1:8-scale model immediately surrounding the ring/formed stiffener intersection was selected for further analysis. Two smaller models, a ring/formed stiffener intersection and a ring/circular stiffener intersection, were studied. The models were significantly smaller than the regions used previously. A comparison of the two intersection models showed that the circular stiffener is a more efficient configuration. 相似文献