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141.
新经济增长理论对我国人力资本发展的借鉴 总被引:3,自引:0,他引:3
新经济增长理论为人力资本理论注入了新的内容,为各国如何利用人力资本发展经济提供了理论指导。分析了新经济增长理论中有关人力资本的理论,以此对我国经济和人力资本的发展提出了一些借鉴;收益递增模型。 相似文献
142.
Novel floating-patch micro-electro-mechanical system (MEMS) antennas are proposed for millimetre-wave applications. The floating-patch MEMS antennas are fabricated on a high resistivity silicon (HRS) substrate using surface micromachining technology. Simulation and experimental results for reflection coefficients and radiation patterns are presented. 相似文献
143.
In this paper, we introduce a transmit multiple-input multiple-output (MIMO) scheme with frequency domain pre-equalization for a multipath or frequency selective channel. In this scheme, MIMO processing in the frequency domain is performed at the transmitter or base station so that the receiver or mobile station only requires limited processing. This scheme provides high data rates and also inherits from the frequency domain equalization the property of relatively low complexity in severe multipath environments. The MIMO transmit processing is derived by minimizing the minimum mean square errors (MMSE), and expressions for the signal-to-interference-plus-noise ratio and error probability based on the Gaussian approximation of the interference term are provided. Some important associated issues, such as channel errors and computational complexity, are also investigated. Numerical simulations are also provided and these demonstrate the improved performance of our proposed scheme compared to other transmit MIMO schemes. In particular, they show that the proposed system can attain multipath or frequency diversity of the channel. 相似文献
144.
Onishi K. Rino Choi Chang Seok Kang Hag-Ju Cho Young Hee Kim Nieh R.E. Jeong Han Krishnan S.A. Akbar M.S. Lee J.C. 《Electron Devices, IEEE Transactions on》2003,50(6):1517-1524
Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs. 相似文献
145.
We developed a new type of human-sized biped walking robot (BWR) driven by the closed-chain type of joint actuator. Each leg of the robot is composed of three pitch joints and one roll joint. In all, a 15 degree-of-freedom robot including four arm joints and three joints for the head was developed. The BWR was developed to walk autonomously such that all leg joints are actuated by small 90 W dc motors/drivers and dc batteries and controllers which are boarded. The joint actuator for the BWR is composed of the four-bar-link mechanism driven by the ball screw which has high strength and high gear ratio. A dynamics modeling of the developed BWR for forward walking is presented in which the revolute joint dynamics are transformed into the prismatic joint dynamics of the ball screw. Also, an analysis on the four-bar-link mechanism applied to the joint actuator and on the structure of the BWR is shown. The design specification of the actuating motor for the BWR is analyzed through the torque analysis of the four-bar-link actuator. Through walking experiments of the BWR, the walking performance and trajectory tracking ability is shown. © 2004 Wiley Periodicals, Inc. 相似文献
146.
Thai Binh Wan Rachel Seneviratne Aruna Rakotoarivelo Thierry 《Mobile Networks and Applications》2003,8(1):27-36
The high expectations and demand for users to access the Internet from anywhere at anytime has made user mobility an important part of the design and development of the next generation mobile communications and computing. Traditionally user mobility has been divided into two areas: Terminal Mobility and Personal Mobility. In recent years terminal mobility has focused on the movement of the terminal and developed extensions to IP protocols such as Mobile IP. In contrast, personal mobility has only received limited attention, and is somewhat lagging behind. This research has either focussed on personal mobility in communications or personalisation of operating environments. As a result, to date no framework for providing true personal mobility has emerged. In this paper, we introduce a new personal mobility framework called IPMoA (Integrated Personal Mobility Architecture), which integrates both aspects of personal mobility to provide a complete personal mobility solution, and illustrate the viability of this approach through a proof-of-concept implementation. 相似文献
147.
In this paper, we report on the design, fabrication, and test of a passive pressure transensor. The sensor uses the self-resonant frequency modulation of an integrated coil to detect the pressure variations. This modulation is generated by the relative displacement of a ferrite core attached to a silicone rubber membrane. This scheme simplifies the packaging of the passive transensor by removing the requirement for a separate capacitor to form the resonator. A 30-turn 1.7-/spl mu/H coil having dimensions of 3/spl times/3 mm/sup 2/ is used in a prototype design yielding a sensitivity of 9.6 kHz/kPa with a cylindrical ferrite core of 0.95-mm diameter and 0.5-mm height. We also present a theoretical model of the sensor that shows good agreement with the experimental data. This model can be a useful tool for further optimization of the senors. 相似文献
148.
模块化软件开发的标准化内涵和优势分析 总被引:3,自引:0,他引:3
简述了模块化理论的基本观点,着重从消费者和生产者两个角度分析了实施软件模块化开发的优势,指出了模块化开发的标准化内涵,揭示了软件开发方法上的模块化趋势。 相似文献
149.
Jae-Duk Lee Jeong-Hyuk Choi Donggun Park Kinam Kim 《Electron Device Letters, IEEE》2003,24(12):748-750
In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells. 相似文献
150.