Pd-Ru/C催化剂的制备及其甲酸氧化活性研究

利用微波辅助有机溶胶法成功制备了Pd3Ru/C纳米电催化剂。相比传统的高压有机溶胶法,该法大大降低了有机溶剂的使用量并缩减了反应时间,是一种环境友好和资源节约的新型方法。采用XRD,TEM,XPS和电化学测试等手段对其结构和电化学性能进行了表征和评价。XRD和TEM结果表明微波辅助制备的Pd3Ru/C催化剂其粒径只有约3.0 nm,分散性也较Pd/C得到显著改善;XPS谱图证实催化剂活性组分Pd和Ru的原子比约为3.13∶1,Pd和Ru两种元素间发生了相互作用。与同条件制备的Pd/C催化剂相比,Pd3Ru/C催化剂在电极上发生甲酸氧化反应的主要峰电位负移了约100 mV,峰电流密度增大了2/3左右,其甲酸电氧化活性得到明显提高。     

功率控制器结温无损伤测量技术研究与实现

固态功率控制器或固体继电器逐步向大功率方向发展,其结温测量与监控成为工程应用中的难题,针对这类具有输入输出隔离功能的器件,采用等功率结温测试法研究了基于MOSFET的功率控制器结温无损伤测量技术。利用MOSFET自身结构,通过研究寄生pn结电压随温度变化规律、器件正向功率和反向功率关系、等功率结温测试与实际结温测试结果对比,提出了适用于工程应用的结温无损伤测量方法。结果表明,采用本方法测试结温准确度在1%以内,并可有效避免器件时间差、测试时间差等问题,可实现多层结构、非气密结构等传统方法难以实现的结温测量,具有良好的工程应用价值。     

垂直腔面发射激光器的TO封装工艺操作误差分析

采用FRESNEL光学软件和MATLAB编程,详细分析了垂直腔面发射激光器的TO封装工艺操作误差对耦合效率的影响.发现在芯片横向偏移、芯片倾斜和管帽倾斜这三种操作误差中,管帽倾斜对封装组件的耦合效率影响最大.     

Optimal Block Design for Asynchronous Wake-Up Schedules and Its Applications in Multihop Wireless Networks

In this paper, we consider the problem of designing optimal asynchronous wake-up schedules to facilitate distributed power management and neighbor discovery in multihop wireless networks. We first formulate it as a block design problem and derive the fundamental trade-offs between wake-up latency and the average duty cycle of a node. After the theoretical foundation is laid, we then devise a neighbor discovery and schedule bookkeeping protocol that can operate on the optimal wake-up schedule derived. To demonstrate the usefulness of asynchronous wake-up, we investigate the efficiency of neighbor discovery and the application of on-demand power management, which overlays a desirable communication schedule over the wake-up schedule mandated by the asynchronous wake-up mechanism. Simulation studies demonstrate that the proposed asynchronous wake-up protocol has short discovery time which scales with the density of the network; it can accommodate various traffic characteristics and loads to achieve an energy savings that can be as high as 70 percent, while the packet delivery ratio is comparable to that without power management.     

Authentic delay bounded event detection in heterogeneous wireless sensor networks

When using wireless sensor networks for real-time event alarming, it is critical to ensure event notification in a timely manner. Additionally, it is extremely important to ensure the alarms generated by the sensors propagate securely through the network to the sink. Another important factor to consider is energy, as it is a limited resource in wireless sensor networks. Accordingly, maximizing network lifetime is always an optimization goal. To address the aforementioned concerns, in this paper we present the Authentic Delay Bounded Event Detection System (ADBEDS). ADBEDS works in rounds, and in each round an event detection tree is responsible for simultaneously detecting events, routing packets to a gateway node, and detecting injection of false packets. The ADBEDS can support k-watching composite events to allow event detection in a redundant manner. Additionally, the corresponding event alarm can be delivered within a user-specified bounded delay. The use of energy-based keying allows smaller, more efficient keys as input to security mechanisms, allowing further reduction in energy consumption of the ADBEDS. We evaluate the energy efficiency and reliability of ADBEDS using theoretical analysis and simulation.     

子波高分辨谱估计方法及其在毫米波雷达目标一维距离成像中的应用

文中研究了一种子波谱估计方法。将该方法用于实际的毫米波雷达目标一维距离成像背景之下,在信号采样频率、采样数据长度相同时,可以获得像分辨率高于相同条件下FFT方法的一维距离像,从而可以对一维距离像进行高分辨地分析,在实际应用中具有一定的意义。     

一种简单的衰减相移掩模

:本文介绍了一种与传统Cr掩模制作工艺相兼容的单层衰减相移掩模的结构、原理和制作方法 ,提供了部分实验结果。     

钢铁冶金企业门禁一卡通系统的应用研究

作为"一卡通"的一个子系统,门禁系统早已超越了单纯的门道及钥匙管理,它已经逐渐发展成为一套完整的出入管理系统.本文对钢铁冶金企业中应用较为广泛的门禁一卡通系统的功能进行了需求分析,给出了系统的网络结构设计,并详细介绍该系统的各项功能以及可靠性及安全防护措施,对系统特点进行了详细描述.     

基于Protues的单片机教学改革探索

本文对单片机课程建设中利用Protues仿真软件辅助实践课程教学的教学方法进行了进一步探索.深入分析当前单片机教学过程中实践教学手段及环节设计的不足之处.结合新时代下市场变化及新版本Protues的新特性,提出更为合理的教学方案和教学环节设计.实践效果显示,利用软件新特性对单片机的实践教学进行改革,不仅有利于学生学习思考,掌握知识,同时也帮助了教师更好地进行知识的整理、积累和传递.     

Field‐Induced n‐Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Black phosphorus (BP) has been considered as a promising two‐dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole‐transport‐dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field‐induced effect from the K⁺ center of the silicon nitride (Si_xN_y). An obvious change from pristine p‐type BP to n type is observed after the deposit of the Si_xN_y on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as ~176 cm² V^–1 s^–1. Moreover, high‐performance in‐plane BP p‐n diode and further logic inverter were realized by utilizing the n‐doping approach. The BP p‐n diode exhibits a high rectifying ratio of ~10⁴. And, a successful transfer of the output voltage from “High” to “Low” with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP‐based nanoelectronics.