The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

A BOUNDARY INTEGRAL EQUATION AND ITS NUMERICAL SOLUTION OF POTENTIAL FLOW AROUND SURFACE-IRREGULA-RITIES

In this paper,using complex functional theory,the authors turn the potentialflow around the surface irregularities in a pressure conduit and semi-infinite platforms intoDirichlet problem.Based on Schwarz formula and by the application of Plemelj's formula,theauthors change the problem into the integration of a Cauchy boundary integral equation in theflow plane through the substitution of variables.Using numerical integration,the authors obtainthe velocity distribution and pressure coefficient along surface irregularities and platforms.Thephysical concept of this method is clear,the convergent speed is rapid and the computative effi-ciency is high.The calculated values agree well with the measured results.It is an effective andsimple method in solving potential flow.     

Optical phase conjugation of multiwavelength signals in adispersion-shifted fiber

Optical phase conjugation (OPC) of multiwavelength signals in a dispersion-shifted fiber (DSF), which can be used for dispersion compensation in the wavelength division multiplexing communication system, is theoretically studied. The multiwavelength phase-conjugate signals are generated by four-wave mixing (FWM) in the dispersion-shifted fiber. There are the pulse-shape distortion and the induced frequency chirping in the phase-conjugate signals owing to pump depletion and the cross-phase modulation among the signals and phase-conjugate signals, respectively. The FWM among the pump wave, signals, and phase-conjugate signals causes unequal conversion efficiencies for the multiwavelength signals and enhances the induced frequency chirping in the phase-conjugate signals. The induced frequency chirping may deteriorate the restoration of the pulse shape. Both the pulse-shape distortion and induced frequency chirping increase with the signal and pump powers. The formula for the induced frequency chirping that is only caused by the signals through cross-phase modulation is derived. The requirement of the signal power in the dispersion-shifted fiber for the restoration of the pulse shape by the optical phase conjugation is estimated and numerically verified     

Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested     

All-optical photonic switches using integrated inverted asymmetricFabry-Perot modulators and heterojunction phototransistors

InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing     

The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.     

The use of doped polyaniline as an electrode in the galvanic anodic protection of ferrous metals in industrial acid solutions

In order to investigate the galvanic anodic protection (GAP) of ferrous metals (such as 410, 304 and 316 stainless steels) in acid solutions by doped polyaniline (PANi), separate doped PANi powder-pressed electrodes with different surface areas (the area ratio of the PANi electrode to stainless steel is between 1:1 and 1:2) have been prepared. These were coupled with ferrous metal in the following solutions: 5 M sulphuric acid, 5 M phosphoric acid and industrial phosphoric acid (containing 5 M phosphoric acid and 0.05% chloride ion) to construct a galvanic cell, in which PANi is cathode while ferrous metal is anode. The results indicate that a PANi electrode with sufficient area can provide corrosion protection to stainless steel in these acidic solutions. A pilot scale coupling experiment was carried out. The results indicate that PANi is a promising material as an electrode for the anodic protection of ferrous metals in acidic solutions in industrial situations.