The E3 architecture: enabling future cellular networks with cognitive and self‐x capabilities

Future mobile networks are expected to be complex heterogeneous systems. On the one hand this will enable users to take advantage of a number of different access technologies. On the other hand it will seriously affect network management procedures since more extensive operations and decisions will have to be dealt with. To tackle these challenges a number of new dynamic mechanisms need to be designed. It is imperative that certain network management tasks have to be performed without human intervention to reduce the OPEX costs and achieve faster responses in different events. To achieve this goal, the introduction of self‐x functionalities, combined with cognitive mechanisms and the ability to reconfigure network entities and terminals, is required. Moreover, the introduction of a new pilot channel needs to be considered to assist the terminals in selecting the most suitable radio access technology according to their requirements. We present the functional architecture of an evolved network that was designed in the context of the EU‐funded IP project ‘E³: End‐to‐End Efficiency’. This architecture aims to enhance existing procedures usually performed in traditional operation and maintenance systems (e.g. spectrum management, network planning, configuration actions). We explain the rationale of our design and provide specific examples to illustrate the role of the different functional entities and their interfaces. A considerable part of this architecture has recently been approved as a feasibility study by the ETSI Committee Reconfigurable Radio System. Copyright © 2010 John Wiley & Sons, Ltd.     

Hydrogen‐Bonded Organic Semiconductors as Stable Photoelectrocatalysts for Efficient Hydrogen Peroxide Photosynthesis

Research on semiconductor photocatalysts for the conversion of solar energy into chemical fuels has been at the forefront of renewable energy technologies. Water splitting to produce H₂ and CO₂ reduction to hydrocarbons are the two prominent approaches. A lesser‐known process, the conversion of solar energy into the versatile high‐energy product H₂O₂ via reduction of O₂ has been proposed as an alternative concept. Semiconductor photoelectrodes for the direct photosynthesis of H₂O₂ from O₂ have not been applied up to now. Photoelectrocatalytic oxygen reduction to peroxides in aqueous electrolytes by hydrogen‐bonded organic semiconductor is observed photoelectrodes. These materials have been found to be remarkably stable operating in a photoelectrochemical cell converting light into H₂O₂ under constant illumination for at least several days, functioning in a pH range from 1 to 12. This is the first report of a semiconductor photoelectrode for H₂O₂ production, with catalytic performance exceeding prior reports on photocatalysts by one to two orders of magnitude in terms of peroxide yield/catalyst amount/time. The combination of a strongly reducing conduction band energy level with stability in aqueous electrolytes opens new avenues for this widely available materials class in the field of photo(electro) catalysis.     

Free radical fast photo-cured gate dielectric for top-gate polymer field effect transistors

We demonstrated top-gate organic field effect transistors (OFETs) made with free radical photo-cured polymer gate dielectrics and poly(3-hexylthiophene). We introduced a new approach of cross linking dielectric polymers in OFETs by using acrylate monomers cured with UV irradiation directly on the semiconductor. Three different blends were formulated: one self-initiating acrylate oligomer and two epoxy acrylate monomers mixed with 4-phenylbenzophenone as photo initiator and N-methyldiethanolamine as amine synergist. Thin films of these blends were cured in air within one minute. The curing process was monitored with FT-IR spectroscopy and the effect of a wetting agent was studied by measuring the CV characteristics of metal–insulator-semiconductor (MIS) structures made with these formulations. OFETs made with the demonstrated formulations showed high on/off ratios (10⁵–10⁶) and low sub-threshold slopes (0.44–1.42 V/dec).     

Synthesis of scanning electron microscopy images by high performance computing for the metrology of advanced CMOS processes

Scanning electron microscopy is still the technique of choice for imaging and for in-line measurement of critical dimensions and overlay accuracy in most of the core technology processes. In particular, critical dimension microscopy provides information about design template matching and edge placement errors through links with design having proven beneficial effects on process yield and product reliability. In this paper, the use of high performance computing is demonstrated to simulate linescans and 2D secondary electron images to be used in optical proximity error correction strategies for nanometer scale technologies.     

Untersuchung des Passivierungsmechanismus von Eisen in Phosphatelektrolyten an erosiv beanspruchten Oberflächen

Investigation into the passivation mechanism of iron in phosphate electrolytes on surfaces exposed to erosive attack On iron electrodes in neutral phosphate electrolytes by continuous solid particle impingement a reaction layer is formed within the transition potential region under anodic polarization. XPS and AES investigations show that the reaction layer formed under impingement will be replaced by an oxide layer during the transition into the passive state under simultaneous decrease of the layer thickness. The active/passive transition in phosphate electrolytes may be attached to the equilibrium potential of the reaction . According to this thermodynamic interpretation of both the active/passive transition and the passive/active transition, respectively on iron in presence of phosphate ions may be described as the Fe(II)/Fe(III)-redox reaction with two solid phases, the iron(II)-phosphate phase and the iron(III)-oxide phase. The increase of the interfacial dynamic processes at the solid/liquid interface causes in consequence of the solid particle impingement that thermodynamic laws govern the course of reactions.     

Graphene Oxide‐Cyclic R10 Peptide Nuclear Translocation Nanoplatforms for the Surmounting of Multiple‐Drug Resistance

Multidrug resistance resulting from a variety of defensive pathways in cancer has become a global concern with a considerable impact on the mortality associated with the failure of traditional chemotherapy. Therefore, further research and new therapies are required to overcome this challenge. In this work, a cyclic R10 peptide (cR₁₀) is conjugated to polyglycerol‐covered nanographene oxide to engineer a nanoplatform for the surmounting of multidrug resistance. The nuclear translocation of the nanoplatform, facilitated by cR₁₀ peptide, and subsequently, a laser‐triggered release of the loaded doxorubicin result in efficient anticancer activity confirmed by both in vitro and in vivo experiments. The synthesized nanoplatform with a combination of different features, including active nucleus‐targeting, high‐loading capacity, controlled release of cargo, and photothermal property, provides a new strategy for circumventing multidrug resistant cancers.     

Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique

Highly dispersive Cu₂ZnSnS₄ (CZTS) nanoparticles were successfully synthesized by a simple solvothermal route. A low cost, non-vacuum method was used to deposit CZTS nanoparticle ink on glass substrates by a doctor blade process followed by selenization in a tube furnace to form Cu₂ZnSn (S,Se)₄ (CZTSSe) layers. Different selenization conditions and particle concentrations were considered in order to improve the crystallinity and surface morphology; the annealing temperature was varied between 400°C and 550°C and the annealing time was varied between 5 min and 20 min in a selenium-nitrogen atmosphere. The influence of annealing conditions on structural, compositional, optical and electrical properties of CZTSSe thin films was studied. An improvement in the structural and surface morphology was observed with increasing of annealing temperature (up to 500°C). An enhancement in the crystallinity and surface morphology were observed for thin films annealed for 10–15 min. Absorption study revealed that the band gap energy of as-deposited CZTS thin film was approximately 1.43 eV, while for CZTSSe thin films it ranged from 1.15 eV to 1.34 eV at different annealing temperatures, and from 1.33 eV to 1.38 eV for different annealing times.