Possibilities and extension of XRD material response analysis in failure research for the advanced evaluation of the damage level of Hertzian loaded components

Due to clearly distinguishable damage symptoms, it is differentiated between the surface and sub‐surface failure mode of rolling bearings. Material states red out by X‐ray diffraction (XRD) residual stress measurements point to a variety of loading conditions especially at raceway surfaces that are associated with several competing failure mechanisms. The corresponding lifetime reduction can range from the lower fatigue strength region to material ratcheting in extreme cases. Relevant position of the microstructural changes and nature of the failure mechanisms are characterized. The time alteration of the XRD material parameters measured at or near the surface and at the depth of the maximum equivalent stress correlates, in a different manner, with the statistical parameter of the 10 % bearing life. Both failure modes are illustrated by concrete examples. Contaminated lubricant and boundary lubrication, which represent practically important surface‐induced failures, are discussed in more detail. Gray staining, i.e. shallow pitting, often occurs without distinct indication of global material aging by means of XRD characteristics. Here, scanning electron microscopy observations and electron microprobe analyses point to corrosion fatigue as acting surface failure mechanism. The interaction between material and lubricant under complex loading regimes particularly of mixed friction and corrosion opens further failure research areas in the field of tribology.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Queueing analyses of traffic access control strategies withpreemptive and nonpreemptive disciplines in wideband integrated networks

A multiserver queueing model of access control strategies for a wideband integrated services digital network (ISDN) is considered. There are two types of service requests (SRs): Type 1 SR requires b servers (basic bandwidth units, BBUs) of the c available servers, while Type 2 SR requires a single server. Both types of SRs are queuable in two separate infinite-size buffers. A Type 1 SR is allowed to seize d(⩽b) servers at first and then acquire additional servers as they become available to meet the original requirement of b servers. The arrival processes of both types of SRs are Poisson and the service times are exponentially distributed with mean b/dμ₁ and 1/μ₂ for Type 1 SR and Type 2 SR, respectively. Preemptive and nonpreemptive priority disciplines with movable boundary are analyzed using the Neuts' matrix-analytic approach. Numerical examples of the queue length distribution and the mean waiting time of the SRs are presented     

Analysis and design-optimization of LCC resonant inverter forhigh-frequency AC distributed power system

The analysis and design of an LCC resonant inverter for a 20 kHz AC distributed power system are presented. Several resonant converter topologies are assessed to determine their suitability for high efficiency power conversion, under resistive and reactive loads. Two LCC-resonant inverter designs were implemented. One with all switches operating with zero voltage switching (ZVS), and another with two switches operating with ZVS and two switches with zero current switching (ZCS). The experimental results are presented along with a performance comparison of the two versions     

Enhancement mode InP MISFET's with sulfide passivation andphoto-CVD grown P3N5 gate insulators

High performance enhancement mode InP MISFET's have been successfully fabricated by using the sulfide passivation for lower interface states and with photo-CVD grown P₃N₅ film used as gate insulator. The MISFET's thus fabricated exhibited exhibited pinch-off behavior with essentially no hysteresis. Furthermore the device showed a superior stability of drain current. Specifically under the gate bias of 2 V for 10⁴ seconds the room temperature drain current was shown to reduce from the initial value merely by 2.9% at the drain voltage of 4 V. The effective electron mobility and extrinsic transconductance are found to be about 2300 cm ²/V·s and 2.7 mS/mm, respectively. The capacitance-voltage characteristics of the sulfide passivated InP MIS diodes show little hysteresis and the minimum density of interface trap states as low as 2.6×10¹⁴/cm² eV has been attained     

A fully distributed power control algorithm for cellular mobilesystems

Several distributed power control algorithms that can achieve carrier-to-interference ratio (CIR) balancing with probability one have been proposed previously for cellular mobile systems. In these algorithms, only local information is used to adjust transmitting power. However, a normalization procedure is required in each iteration to determine transmitting power and, thus, these algorithms are not fully distributed. In this paper, we present a distributed power control algorithm which does not need the normalization procedure. We show that the proposed algorithm can achieve CIR balancing with probability one. Moreover, numerical results reveal our proposed scheme performs better than the algorithm presented in Grandhi et al. [1994]. The excellent performance and the fully distributed property make our proposed algorithm a good choice for cellular mobile systems     

Quantitative NMR spectroscopy by matrix pencil methods

The matrix pencil (MP) method, based on the singular value decomposition (SVD), is applied to quantitative NMR spectroscopy. Its relationship to other SVD-based methods is also presented. Simulations and applications are given to demonstrate the capability of superior performance.©1993 John Wiley & Sons Inc     

Simple approximations of the DC flux influence on the core losspower electronic ferrites and their use in design of magnetic components

The effect of DC flux on the core loss is examined for the practical range of power and frequency. Relevant core loss equations are derived and applied to an optimization algorithm to determine the minimum core loss at a given ratio of s (DC flux density to AC peak flux density). It has been found that the curves of hysteresis loss density versus the ratio of s exhibit a peak at a critical ratio. Below or above this critical ratio, the loss density decreases drastically. On the other hand, the curves of eddy-current loss density versus the ratio of s exhibits a minimum point at a critical ratio. Below or above this critical ratio, the loss density increases gradually