Molecular dynamics study on nanotube-resonators with mass migration applicable to both frequency-tuner and data-storage-media

We investigated the cantilevered carbon-nanotube-resonator including electromigratively movable nanoparticle via classical molecular dynamics simulations and continuum model. The change of the effective mass value, which was closely correlated with the position change of the encapsulated nanoparticle, could be regressed by a power function, the resonance frequency of the carbon-nanotube-resonator could be tuned by controlling the nanoparticle’s position, and the possible frequency-shift-ranges then reached 18–85%. The suggested device could be served as a data-storage-media for electromechanical nonvolatile-memory as well as a frequency-tuner.     

Optimisation of location and dimension of SMC precharge in compression moulding process

The main goal of the present study is to optimise the precharge conditions such as the precharge location and dimensions that give significant effects on the mechanical performance of composite structures manufactured by the compression moulding process. As preliminary step of optimisation, we developed a manufacturing simulation program to predict the fibre volume fraction and fibre orientation. And coupled with this simulation program and a structural analysis program, a genetic algorithm (GA) is implemented to optimise the precharge conditions. The penalty function method and the repair algorithm are modified for handling constraints. The repair algorithm is applied to a symmetric structure and an arbitrary shape structure to find optimal precharge conditions.     

Fabrication of Al matrix composite reinforced with submicrometer-sized Al<Subscript>2</Subscript>O<Subscript>3</Subscript> particles formed by combustion reaction between HEMM Al and V<Subscript>2</Subscript>O<Subscript>5</Subscript> composite particles during sintering

To fabricate an Al-V matrix composite reinforced with submicron-sized Al₂O₃ and Al_xV_y (Al₃V, Al₁₀V) phases, high energy mechanical milling (HEMM) and sintering were employed. By increasing the milling time, the size of mechanically milled powder was significantly reduced. In this study, the average powder size of 59 μm for Al, and 178 μm for V₂O₅ decreased with the formation of a new product, Al-Al₂O₃-Al_xV_y, with a size range from 1.3 μm to 2.6 μm formed by the in-situ combustion reaction during sintering of HEM milled Al and V₂O₅ composite powders. The in-situ reaction between Al and V₂O₅ during the HEMM and sintering transformed the Al₂O₃ and Al_xV_y (Al₃V, Al₁₀V) phases. Most of the reduced V reacted with excess the Al to form Al_xV_y (Al₃V, Al₁₀V) with very little V dissolved into Al matrix. By increasing the milling time and weight percentage of V₂O₅, the hardness of the Al-Al₂O₃-Al_xV_y composite sintered at 1173 K increased. The composite fabricated with the HEMM Al-20wt.%V₂O₅ composite powder and sintering at 1173 K for 2 h had the highest hardness.     

Delay-Dependent Robust Stability of Stochastic Uncertain Systems with Time Delay and Markovian Jump Parameters

This paper is concerned with the delay-dependent stability for a class of stochastic uncertain systems with time delay and Markovian jump parameters. The uncertainties considered in this paper are norm-bounded and governed by the Markov process. Un like the topics in the existing literature, the stability criterion is expressed in terms of linear matrix inequalities, which can be efficiently solved by using a convex-optimization algorithm. Finally, a numerical example is given to illustrate the effectiveness of the proposed method.     

Finite element modeling of electrode-skin contact impedance inelectrical impedance tomography

In electrical impedance tomography (EIT), the measured voltages are sensitive to electrode-skin contact impedance because the contact impedance and the current density through it are both high. Large electrodes were used to provide a more uniform current distribution and reduce the contact impedance. A large electrode differs from a point electrode in that it has shunting and edge effects that cannot be modeled by a single resistor. The finite-element method (FEM) was used to study the electric field distributions underneath an electrode, and three models were developed: a FEM model, a simplified FEM model, and a weighted load model. The FEM models considered both shunting and edge effects and closely matched the experimental measurements. It is concluded that FEM models of electrodes can be used to improve the performance of an electrical impedance tomography reconstruction algorithm     

Tunneling source-body contact for partially-depleted SOI MOSFET

In this paper, a novel self-aligned asymmetric source-body contact is proposed based on the tunneling effect. The fabrication is relatively simple with only one extra angle implant step. Test structures have been fabricated and good electrical results were obtained. The improvements of this new approach in both device performance and manufacturing compared to fully-depleted SOI MOSFETs are discussed     

Fixed Point Implementation of the QCELP Speech Coder

The Qualcomm code excited linear prediction (QCELP) speech coder was adopted to increase the capacity of the CDMA Mobile System (CMS). In this paper, we implemented the QCELP speech coding algorithm by using TMS320C50 fixed point DSP chip. Also the fixed point simulation was done with C language. The computation complexity of QCELP on TMS320C50 was about 33 MIPS and program size was 10k words and data memory was 4k words. In the normal call test on the CMS, where mobile to mobile call test was done in the bypass mode without double vocoding, mean opinion score for the speech quality was 3.11.     

Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

We fabricated a nonvolatile Flash memory device using Ge nanocrystals (NCs) floating-gate (FG)-embedded in HfAlO high-/spl kappa/ tunneling/control oxides. Process compatibility and memory operation of the device were investigated. Results show that Ge-NC have good thermal stability in the HfAlO matrix as indicated by the negative Gibbs free energy changes for both reactions of GeO/sub 2/+Hf/spl rarr/HfO/sub 2/+Ge and 3GeO/sub 2/+4Al/spl rarr/2Al/sub 2/O/sub 3/+3Ge. This stability implies that the fabricated structure can be compatible with the standard CMOS process with the ability to sustain source-drain activation anneal temperatures. Compared with Si-NC embedded in HfO/sub 2/, Ge-NC embedded in HfAlO can provide more electron traps, thereby enlarging the memory window. It is also shown that this structure can achieve a low programming voltage of 6-7 V for fast programming, a long charge retention time of ten years maintaining a 0.7-V memory window, and good endurance characteristics of up to 10/sup 6/ rewrite cycles. This paper shows that the Ge-NC embedded in HfAlO is a promising candidate for further scaling of FG Flash memory devices.     

The implementation of TS MAC (transmitter station monitor, alarmand control) system for digital DBS system

The implementation of TS MAC system for KOREASAT DBS (direct broadcast satellite) system is presented. This TS MAC controls and monitors the status of the TS equipment and gathers the alarm for them. The advantage of this system is the center-concentrated, real time processing, remote control, and object oriented module decomposing