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21.
We consider the switchbox routing problem of two-terminal nets in the case when all thek nets lie on two adjacent sides of the rectangle. Our routing model is the standard two-layer model. We develop an optimal algorithm that routes all the nets whenever a routing exists. The routing obtained uses the fewest possible number of vias. A more general version of this problem (adjacent staircase) is also optimally solved.This research was supported in part by NSA Contract No. MDA-904-85H-0015, NSF Grant No. DCR-86-00378, and by NSF Engineering Research Centers Program NSFD CDR 88003012. 相似文献
22.
利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。 相似文献
23.
The synthesis of thermal-shock-resistant materials from the system Ta2O5WO3 was investigated. Ta2WO8 had a very low unit-cell thermal expansion coefficient (+0.5 X 10–6° C–1). Ta30W2O81 also had a relatively low coefficient (+4.0 X 10–6 ° C–1) and a thermal durability over 1600° C. The thermal expansion curves of these polycrystalline ceramics were lowered because of microcracks caused by the large thermal expansion anisotropy of the crystal axes and were accompanied by hysteresis loops. The densification of Ta2WO8 ceramic was promoted by the addition of some metal oxides, and the strong ceramic of Ta30W2O81 was obtained by controlling grain growth. 相似文献
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Methylated-β-cyclodextrin (Me-β-CD) was used to complex the photoinitiator, 2,2-dimethoxy-2-phenyl acetophenone (DMPA), yielding a water-soluble host/guest complex. The comparative studies demonstrated that the Me-β-CD complexed DMPA exhibited a high photoreactivity identical to the uncomplexed DMPA, while the CD complex obviously influenced the products of primary photolysis of DMPA and the photopolymerization kinetics due to the steric effect of CD on the subsequent initiation reactions. The photopolymerization rate of acrylamide can be described by the equation: Rp=K[2a]0.62[M]1.37[I]0.5[Me-β-CD]0. The mechanism of polymerization was also discussed. 相似文献
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Stress analysis of spontaneous Sn whisker growth 总被引:5,自引:0,他引:5
K. N. Tu Chih Chen Albert T. Wu 《Journal of Materials Science: Materials in Electronics》2007,18(1-3):269-281
Spontaneous Sn whisker growth is a surface relief phenomenon of creep, driven by a compressive stress gradient. No externally
applied stress is required for the growth, and the compressive stress is generated within, from the chemical reaction between
Sn and Cu to form the intermetallic compound Cu6Sn5 at room temperature. To obtain the compressive stress gradient, a break of the protective oxide on the Sn surface is required
because the free surface of the break is stress-free. Thus, spontaneous Sn whisker growth is unique that stress relaxation
accompanies stress generation. One of the whisker challenging issues in understanding and in finding effective methods to
prevent spontaneous Sn whisker growth is to develop accelerated tests of whisker growth. Use of electromigration on short
Sn stripes can facilitate this. The stress distribution around the vicinity and the root of a whisker can be obtained by using
the micro-beam X-ray diffraction utilizing synchrotron radiation. A discussion of how to prevent spontaneous Sn whisker growth
by blocking both stress generation and stress relaxation is given. 相似文献