Intermetallic reactions in a Sn-20In-2.8Ag solder ball-grid-array package with Au/Ni/Cu pads

The intermetallic compounds formed during the reflow and aging of Sn-20In-2.8Ag ball-grid-array (BGA) packages are investigated. After reflow, a large number of cubic-shaped AuIn₂ intermetallics accompanied by Ag₂In precipitates appear in the solder matrix, while a Ni(Sn_0.72Ni_0.28)₂ intermetallic layer is formed at the solder/pad interface. With further aging at 100°C, many voids can be observed in the solder matrix and at the solder/pad interface. The continuous distribution of voids at the interface of specimens after prolonged aging at 100°C causes their bonding strength to decrease from 5.03 N (as reflowed) to about 3.50 N. Aging at 150°C induces many column-shaped (Cu_0.74Ni_0.26)₆(Sn_0.92In_0.08)₅ intermetallic compounds to grow rapidly and expand from the solder/pad interface into the solder matrix. The high microhardness of these intermetallic columns causes the bonding strength of the Sn-20In-2.8Ag BGA solder joints to increase to 5.68 N after aging at 150°C for 500 h.     

基于Monte Carlo方法的任意概率密度随机数字信号发生器设计

在信号处理和计算机微观模拟的过程中,经常要构造具有特定概率密度的随机数发生器.采用常规方法实现难度较大且不具普遍性,本文根据Monte Carlo方法基本原理和随机信号的数字特征给出一种任意概率密度随机数发生器的设计方法及核心源代码.实验证明该方法简单高效、通用性好.     

基于互信息的MIMO雷达通信一体化系统的性能分析

该文讨论共存式多输入多输出(Multiple-input multiple-output,MIMO)雷达通信一体化系统的性能.雷达端和通信端采用合作的方式共享信息,使得一体化系统的通信端可以利用雷达信号来辅助完成通信任务,而雷达端则可利用被动的通信信号来完成雷达任务.该文推导合作情况下共存一体化MIMO系统的雷达互信息...     

Structural and optical properties of AIN sputtering deposited on sapphire substrates with various orientations

AIN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing (HTTA) on the structural,optical properties as well as surface stoichiometry were comprehensively investigated.The significant narrowing of the (0002) diffraction peak to as low as 68 arcsec of AIN after HTTA implies a reduction of tilt component inside the AIN thin films,and consequently much-reduced dislocation densities.This is also supported by the appearance of E2(high) Raman peak and better Al-N stoichiometry after HTTA.Furthermore,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers.It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AIN regardless of sapphire orienta-tion.     

Self‐Assembled In‐Plane Growth of Mg2SiO4 Nanowires on Si Substrates Catalyzed by Au Nanoparticles

In‐plane growth of Mg₂SiO₄ nanowires on Si substrates is achieved by using a vapor transport method with Au nanoparticles as catalyst. The self‐assembly of the as‐grown nanowires shows dependence on the substrate orientation, i.e., they are along one, two, and three particular directions on Si (110), (100), and (111) substrates, respectively. Detailed electron microscopy studies suggest that the Si substrates participate in the formation of Mg₂SiO₄, and the epitaxial growth of the nanowires is confined along the Si <110> directions. This synthesis route is quite reliable, and the dimensions of the Mg₂SiO₄ nanowires can be well controlled by the experiment parameters. Furthermore, using these nanowires, a lithography‐free method is demonstrated to fabricate nanowalls on Si substrates by controlled chemical etching. The Au nanoparticle catalyzed in‐plane epitaxial growth of the Mg₂SiO₄ nanowires hinges on the intimate interactions between substrates, nanoparticles, and nanowires, and our study may help to advance the developments of novel nanomaterials and functional nanodevices.     

Ripplet: A new transform for image processing

Efficient representation of images usually leads to improvements in storage efficiency, computational complexity and performance of image processing algorithms. Efficient representation of images can be achieved by transforms. However, conventional transforms such as Fourier transform and wavelet transform suffer from discontinuities such as edges in images. To address this problem, we propose a new transform called ripplet transform. The ripplet transform is a higher dimensional generalization of the curvelet transform, designed to represent images or two-dimensional signals at different scales and different directions. Specifically, the ripplet transform allows arbitrary support c and degree d while the curvelet transform is just a special case of the ripplet transform (Type I) with c = 1 and d = 2. Our experimental results demonstrate that the ripplet transform can provide efficient representation of edges in images. The ripplet transform holds great potential for image processing such as image restoration, image denoising and image compression.     

A networked mobile sensor test-bed for collaborative multi-target tracking applications

This paper presents the design, architecture, implementation, and experimental results from a networked mobile sensor test-bed developed for collaborative sensor tracking applications. The test-bed comprises a fleet of networked mobile sensors, an indoor localization system, a control, debugging and management infrastructure, and a tiered wireless ad hoc network for seamless integration of the above three components and the existing wireless infrastructure. First, the software and hardware architectural details of a swarm capable autonomous vehicle (SCAV) system for our collaborative applications are presented. Second, the details of an indoor self-localization and Kalman filter based navigation system design for the SCAV platform are presented. Third, as an example multi-sensor application, a collaborative multi-target tracking problem and a heuristics-based networked solution are formulated. Finally, the performance of the collaborative tracking framework is evaluated on the laboratory test-bed for characterizing the impacts of localization and navigation errors on the distributed tracking performance. The experimental study also characterizes the tradeoff between the tracking performance and the consumed wireless bandwidth. The experimental results demonstrate a number of counterintuitive results due to various errors in sensor localization and navigation.     

New wide-bandgap organic donor and its application in UVB sensors with high responsivity

A triarylamine-containing fluorene derivative (FP) with wide bandgap and excellent thermal stability was synthesized and used as electron donor to construct planar heterojunction organic ultraviolet sensor (UVS), while bis(4-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl)diphenylsilane (NSN) was used as electron acceptor. The UVS ITO/PEDOT:PSS/FP/NSN/LiF/Al showed sensitive visible-blind response to UV illumination from both ITO and cathode sides. When no bias applied, the peak responsivity to UV light through ITO and cathode side was 47 and 33 mA/W, respectively. To the irradiation from the semitransparent Al side, the most sensitive response range covers the UVB region. Under a bias of ?4 V, the peak responsivity at 300 nm reaches 473 mA/W.     

Non-doped active layer,benzo[k]fluoranthene-based linear acenes,for deep blue- to green-emissive organic light-emitting diodes

This work studies a series of fluorescent materials, benzo[k]fluoranthene-based linear acenes, and uses these materials directly as the non-doped active layer to fabricate deep blue- to green-emissive organic light emitting diodes (OLEDs). Experimental results indicate that benzo[k]fluoranthene-based linear acenes with different substituents in pristine films have a wide range and strong intensity of the luminescence spectra. The substituents of benzo[k]fluoranthene derivatives modulate the lifetime of the excited state and PL spectra of excitonic, excimer or both emissions in the solid state. Controls of emission spectra are exploited in fabricating high-performance non-doped deep blue to green OLEDs with electroluminescence in the deep blue region (420–460 nm), green region (480–580 nm) or both (430–580 nm).     

A cascade energy band structure enhances the carrier energy in organic vertical-type triodes

Organic vertical-type triodes (OVTs) based on the cascade energy band structure as emitter layer are studied. The electric characteristics were dramatically enhanced while incorporating the cascade energy under current driving and voltage driving modes. The improvement is attributed to that injection carriers can obtain higher energy through a stepwise energy level. When the device has a layered structure of F₁₆CuPC (10 nm)/PTCDI (10 nm)/pentacene (100 nm) in emitter, it exhibits a common-base transport factor of 0.99 and a common-emitter current gain of 225 under current driving mode and exhibits a high current modulation-exceeding ?520 μA for a low collector voltage of ?5 V and a base voltage of ?5 V and the current on/off ratio of 10³ under voltage driving mode. Furthermore, we realized first organic current mirror that exhibited out/in current ratio of 0.75 and output resistance of 10⁵ Ω by using the OVTs.