Refractory objects and materials for continuous steel casting

In the OAO Borovich Refractory Combine production has been assimilated for a complete set of refractories for continuous steel casting, i.e. from a pipe for protecting a stream of metal to a submerged nozzle. In technical and life characteristics the products correspond to that of world analogs, they provide accident free steel pouring, make it possible to reduce the specific consumption of refractories per ton of steel, to increase CBCM productivity, to reduce billet scrap, and to reduce steel cost. Translated from Novye Ogneupory, No. 8, pp. 4–9, August 2008.     

Formation of the complex oxide NaNdTiO<Subscript>4</Subscript>

The processes of phase formation in the Na₂CO₃-TiO₂ and Na₂CO₃-TiO₂-Nd₂O₃ systems are investigated in the temperature range 600–900°C. The high-temperature solid-phase reactions underlying the process of formation of complex oxide NaNdTiO4 are studied. It is established that the synthesis of the NaNdTiO₄ compound occurs through the reaction of the intermediate product Na₈Ti₅O₁₄ with neodymium oxide in the temperature range 720–780°C. The optimum method is proposed for synthesizing NaNdTiO₄, which makes it possible to reduce the temperature of the synthesis, to avoid the formation of impurities, and to obtain the product in a finely dispersed state.     

Aggregate stability of ZrO2 aqueous sols in electrolyte solutions

The aggregate stability of submicron and nanosized ZrO₂ aqueous sols of different origins and different dispersities at pH 3–10 in the KCl concentration range 10^?3–10^?1 M is investigated by flow ultramicroscopy and photometry. The results obtained are analyzed in the framework of the extended Derjaguin-Landau-Verwey-Overbeek theory and the Muller-Martynov theory of reversible aggregation. The extension of boundary layers of water near the surface of the ZrO₂ particles is estimated.     

Tellurium clusters in channels of the porous silica ZSM-11

The distribution and structure of tellurium nanoclusters synthesized in crystal channels of the porous silica ZSM-11 are investigated using the maximum-entropy method and the Rietveld analysis. It is shown that the intercalated tellurium atoms are arranged in channels of the ZSM-11 zeolite not randomly but in the form of scraps of infinite chains similar to those observed in massive tellurium. The distances between the nearest neighbor tellurium atoms vary in the range 2.53(4)–2.70(3) ?. The clusters Te₄ are formed at the intersections of channels in the structure. These clusters have the form of distorted tetrahedra in which the tellurium atoms are separated by distances of 2.53(4) and 2.90(4) ?. Original Russian Text ? A.E. Lapshin, Yu.F. Shepelev, Yu.I. Smolin, E.A. Vasil’eva, 2008, published in Fizika i Khimiya Stekla.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Comparative Study of Rubidium and Cesium as Promoters in Carbon-supported Ruthenium Catalysts for Ammonia Synthesis

Sibunit-supported Ru-catalysts promoted with cesium or rubidium compounds have been comparatively studied with XPS. The cesium promoter interacts both with support and with active component. The absence of the promoter–support interaction in the case of rubidium provides a stronger interaction between promoter and active component compared to the cesium-based catalysts. These differences in the promoter–support and promoter–metal interactions are exhibited when a sequence of ruthenium and alkali introduction are changed.     

Some sulfides of gold and silver: Composition,mineral mineral assemblage,and conditions of formation

Characteristic mineral assemblage and special features of the composition of Au and Ag sulfides of gold-silver deposits have been established. The forms of the occurrence of Au and Ag in the minerals of the early and last stages have been analyzed. The conditions for the formation of uytenbogaardtite and petrovskaite in supergene and low-temperature hydrothermal processes have been considered. A thermodynamic model explaining their genesis in the oxidation zones is presented.     

风管摩擦阻力的直接计算方法

提出用高精度的反映密度、黏度和温度关系的经验公式和Colebrook公式计算风管摩擦阻力系数的方法。分析和算例表明，用该方法计算，计算结果比采用常用工程设计方法更为准确，为应用计算机进行风道设计提供了直接、简便的方法。     

Contributions of the interior and surface states of charge carriers to the emission spectra of CdS quantum dots in borosilicate glasses

The photoluminescence spectra of CdS quantum dots grown in a borosilicate glass by sol-gel technology are recorded and analyzed. It is shown that the photoluminescence spectra of the samples are related to annihilation of free (interior) excitons in the ground state and excited state. Emission associated with the surface states of the quantum dots is detected in the region around 2.7 eV for the first time. The emission is due to recombination of electrons localized at the surface with heavy holes in the free states of the quantum dots. Resonance excitation of the structures makes it possible to reveal the specific features of the localized surface states responsible for the photoluminescence band. The properties of the band are, to a large extent, similar to the properties of the emission bands of both three-dimensional media (amorphous semiconductors and substitution alloys) and two-dimensional systems (quantum wells and superlattices).     

An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ～0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ～8.5% are attained for the electron-beam energy of 23 keV.