广播发射集散控制系统

本文介绍了广播发射台利用计算机技术、网络技术、遥控遥测技术、现代测试手段，对设备进行自动化控制与管理；实现设备技术指标自动测试，发射台无人值班、有人留守，建立机器的计算机档案制度，确保安全优质播出的方法和经验。     

前轮毂旋转弯曲疲劳断裂分析

采用化学分析，金相检验，力学性能测试及扫描电镜分析方法对轿车前轮毂早期断裂原因进行了分析。结果表明，冷却不足使组织中出现网状及小块状铁素体，导致硬度偏低，加之磨削加工痕迹较粗是引起前轮毂早期断裂的原因。     

Viterbi译码器的硬件实现

介绍了一种Vkerbi译码器的硬件实现方法。设计的基于硬判决的Viterbi译码器具有约束长度长（9)、译码深度深（64)的特点。为了兼顾硬件资源与电路性能两个方面，在设计中使用了4个ACS单元，并根据Xilinx Virtex系列FPGA的结构特点．利用FPGA内部的BlockRAM保存汉明距离和幸存路径，提高了译码速度。     

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

蒙特卡罗方法在空间辐射制冷器理论分析及热设计计算中的应用

介绍了二级抛物面型辐射制冷器的热物理模型及用蒙特卡罗方法数值模拟解决其热流理论和辐射热耦合表面（漫发射、镜反射）辐射热交换的处理方法。     

The crystal structure of an Fe-superoxide dismutase from the hyperthermophile Aquifex pyrophilus at 1.9 A resolution: structural basis for thermostability

The incidence of stress fractures is increasing among competitive and recreational athletes as well as among children and the elderly. By understanding the continuum of bone's response to stress and maintaining an appropriate index of suspicion, the health care provider can diagnose these injuries appropriately. An accurate history and examination is essential and will differentiate stress fractures from other stress reactions. The more common stress fractures are discussed.     

PC／PET共混物的非等温结晶动力学

采用等速变温ＤＳＣ法对ＰＣ／ＰＥＴ共混体系的非等温结晶动力学进行了研究，结果表明，从玻璃态结晶时，随着ＰＣ含量的增加，ＰＥＴ组分的结晶速率先增加后降低。耐从熔体结晶时，体系的结晶速率随着ＰＣ含量的增加而增加，讨论了ＰＣ对ＰＥＴ组分结晶过程的影响。     

广播电视中心发展新趋势——多媒体化初探

本文讨论了多媒体技术所需的软硬件基础和网络传输技术，及其在数字化广播电视中心节目制作中的应用，展望了无磁带广播电视中心有美好前景，在此基础上提出了完整的广播电视中心多媒体系统结构图。     

Pathway engineering for the production of aromatic compounds in Escherichia coli

The standard enzymatic assay for quantification of D-sorbitol in plasma was adapted to the automatic analyzer Cobas Mira S. In the assay, NAD (reagent) in the presence of sorbitoldehydrogenase (SDH; start reagent) converts D-sorbitol to fructose with formation of NADH, which was detected automatically as the difference between the first and last readings at 340 nm. The sample blank values for each specimen were subtracted to exclude both endogenous D-sorbitol and sugars, which also react as substrates for SDH. The method is simple, rapid (40 samples/h), precise down to endogenous concentrations (coefficient of variation < 5%; limit of determination: 0.38 mg/L) and linear up to 100 mg/L. Samples with higher D-sorbitol concentrations were estimated after dilution. The method was used to measure disposition curves of sorbitol in volunteers after a single intravenous dose of 0.8 g sorbitol.     

Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained