非互易波导光栅的滤波特性与应用

根据磁光材料的非互易特性和波导光栅的滤波特性,介绍了一种磁光波导光栅的非互易滤波特性及其应用.该磁光波导光栅采用法拉第旋转系数为4800°/cm的掺铈钇铁石榴石(Ce:YIG)材料、单模的脊型补偿墙截面结构和cosine型变迹光栅结构的设计.利用有限差分法和等效折射率法模拟该磁光波导光栅非互易效应的大小,同时结合耦合模理论和转移矩阵法对该磁光波导光栅的非互易滤波特性进行分析.结果表明,对于TE模和1550 nm波段,该磁光波导光栅正反向传输的中心波长偏移0.8 nm,带宽0.4 nm(-20 dB).这种非互易滤波特性可以用来实现波长选择光隔离器和光分插复用器(OADM)等集成光学器件.     

光分组交换中光标记技术研究

光标记交换是一种光交换新技术,能有效克服光交换中的电子瓶颈,其技术关键是光标记的产生和提取.本文对新型副载波复用、载波抑制和分离、正交调制这3种光标记新技术进行了描述与讨论,并比较分析了各自的优缺点及实用化前景.     

多芯电缆屏蔽效能测试方法研究

首先介绍了屏蔽效能的定义,然后根据多芯电缆和同轴电缆的区别与联系,提出了适用于测量多芯屏蔽电缆效能的注入线测试方法,并且比较了测试结果和仿真结果,为测试人员合理选择有效的测试方法提供了依据。     

FDTD方法分析金属机箱的屏蔽特性

文中采用时域有限差分法对带孔缝机箱的屏蔽特性进行了仿真分析。比较了入射场极化方式不同的情况下机箱的屏蔽特征,得出的分析结论可用于指导机箱的电磁屏蔽设计和防护。     

CMP承载器的初步研究

在CMP中,由于抛光垫在与其接触的晶圆边缘产生异常压力点,以及转台和承载器旋转的线速度之差在边缘处较其他点大得多,从而导致了晶圆边缘效应的产生。阐述了承载器在CMP中的作用,详细分析了边缘效应产生的原因和克服的方法。在承载器上采用与晶圆保持适当间隙的保持环结构,对保持环施加适当的压力,使保持环和晶圆位于同一抛光平面上;针对旋转式CMP设备固有的线速度之差导致片内非均匀性增大的问题,对200mm晶圆划分两区域进行微压力补偿,同时详细说明了压力补偿气路的设计和实现的功能,指出今后多区域微压力补偿将采用矩阵控制技术。     

Blind identification of a class of nonlinear systems with cyclostationary input

This letter deals with blind identification of nonlinear discrete Hammerstein system under the input signal that is cyclostationary. The first-order moment of the specific input as well as the inverse nonlinear mapping of the Hammerstein model are combined to establish a relationship between the system output and the system parameters, which implies an approach to identifying the system blindly. Simulation results demonstrate the effectiveness of this approach to blind identification of a class of nonlinear systems.     

Effect of Ionization Characteristics on Electrochemical Migration Lifetimes of Sn-3.0Ag-0.5Cu Solder in NaCl and Na<Subscript>2</Subscript>SO<Subscript>4</Subscript> Solutions

Anodic dissolution characteristics and electrochemical migration (ECM) behavior of Sn-3.0Ag-0.5Cu solder in NaCl and Na₂SO₄ solutions were investigated using anodic polarization tests and water drop tests (WDT). The ECM lifetime of Sn-3.0Ag-0.5Cu solder in NaCl solution (42.4 s) was longer than that in Na₂SO₄ solution (34.8 s). The pitting potential of Sn-3.0Ag-0.5Cu solder in NaCl solution (135 mV, SCE) was higher than that in Na₂SO₄ solution (−367 mV, SCE). The passivity film (SnO₂) formed on Sn-3.0Ag-0.5Cu solder during WDTs in NaCl solution was thicker than that formed in Na₂SO₄ solution. Therefore, the longer ECM lifetime of Sn-3.0Ag-0.5Cu solder in NaCl solution than in Na₂SO₄ solution can be attributed to the higher pitting potential in the NaCl solution, which is ascribed to the formation of a thicker passivity film (SnO₂) in the former. It was confirmed that microelements such as Ag and Cu do not take part in ECM because they form chemically stable intermetallic compounds with Sn. We believe that Sn is the only element that contributes to ECM, and dissolution of Sn at the anode is possibly the rate-determining step of ECM of Sn-3.0Ag-0.5Cu solder.     

As Doping in (Hg,Cd)Te: An Alternative Point of View

Acceptor doping of many II–VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg_1−x Cd _x Te) with arsenic is no exception. High-temperature (>400°C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II–VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.     

A review:Photonics devices,architectures,and algorithms for optical neural computing

The explosive growth of data and information has motivated various emerging non-von Neumann computational approaches in the More-than-Moore era.Photonics neuromorphic computing has attracted lots of attention due to the fascinating advantages such as high speed,wide bandwidth,and massive parallelism.Here,we offer a review on the optical neural computing in our research groups at the device and system levels.The photonics neuron and photonics synapse plasticity are presented.In addition,we introduce several optical neural computing architectures and algorithms including photonic spiking neural network,photonic convolutional neural network,photonic matrix computation,photonic reservoir computing,and photonic reinforcement learning.Finally,we summarize the major challenges faced by photonic neuromorphic computing,and propose promising solutions and perspectives.     

组织光透明技术在骨透明化中的生物医学成像应用与展望

近年来组织光透明技术的飞速发展,为现代骨科临床基础研究带来了新的契机.组织光透明技术主要通过多种物理、化学手段,降低组织的光散射和光吸收,使光能在组织中更好地传播,从而增加光学成像的深度和对比度.结合多种荧光标记策略,实现更深层、更高分辨的骨组织及三维空间微结构信息,为突破骨这种高散射组织及骨疾病的分子影像学研究带来新...