多功能教堂音视频系统设计与实现

依据智能建筑弱电工程的系统组成原理,结合某基督教堂的具体结构及业主对弱电工程的具体要求,对教堂的综合布线、视频音频的广播、录音录像、闭路电视监控等系统进行了设计与实施,结果表明,各个系统性能指标基本达到设计要求。     

一种基于面阵CCD的单波长辐射测温方法

介绍了一种基于面阵CCD的单波长辐射测量三维温度场的方法.通过引入一种新型的多路面阵CCD数据实时采集系统采集待测温度场多个方向投影数据,利用计算机层析技术重建温度场内部空间物理量的分布,然后根据维恩近似公式获得空间温度场的分布.对多路CCD数据实时采集系统的内部构造以及工作原理进行了较为详细的阐述.并对蜡烛的火焰温度场进行了测量,最后用热电偶验证此方法的正确性.利用此系统可以做到数据实时采集,为三维流场的实时测量奠定了良好的基础.     

手机车机互动的应用模式及关键技术分析

基于对车载信息服务现状的思考以及业界手机车机融合创新相关应用案例的分析,提出手机车机互动将是未来车载信息服务发展的重要方向,阐述了手机车机互动的主要应用模式及几种主流的技术方向,并对其技术特点进行了分析比较,为促进该应用模式及技术的推广提供参考。     

基于以太网技术的音视频信号切换器的设计

提出一种带以太网接口的智能音视频切换器。该系统以Mega64单片机为核心,实现了4×1的音频、视频信号监测和自动切换输出。通过以太网接口连接监控中心,实现远程参数配置和监控功能。同时,该系统在无上位机时,可独立工作,灵活性较好。     

含B闪锌矿三元系半导体BxIn1-xP和BxGa1-xP带隙理论预测

利用第一性原理计算方法,用广义梯度近似 (GGA) 处理电子之间的交换关联能,计算了BxIn1-xP,BxGa1-xP的带隙结构.BxIn1-xP的带隙弯曲参数b _Eg (Γ)=4.32eV,b_Eg(X) =1.8eV,它从直接带隙转变为间接带隙时B的含量为0.47;在小量B的掺入下,可使BxIn1-xP的带隙变小,在x=0.15时带隙达到最小值1.33eV.BxGa1-xP的带隙弯曲参数b_Eg(Γ)=1.37eV,b _Eg(X)=2.46eV,在整个组分内是间接带隙.BxIn1-x-P,BxGa1-xP有较大的带隙弯曲参数,是由于组成它们的二元系之间存在较大的晶格失配.     

子脉冲序列模式Er∶YAG激光消融牙本质的实验观察

研制了一台子脉冲序列模式Er∶YAG激光器,获得了每秒80个和100个子脉冲高能量激光输出,开展了不同脉冲宽度的子脉冲对离体牙本质的激光消融实验。实验中使用的是子脉冲序列模式激光器,其重复频率为20 Hz,脉冲包络能量为45 mJ,子脉冲宽度分别为20,30,40,50μs,在无冷却水雾条件下分别对比了子脉冲宽度对牙本质消融量、牙髓腔温升和坑洞组织形貌的影响。结果表明:在相同的激光脉冲能量下,较窄的子脉冲宽度不仅能够增加消融量,降低牙髓腔温升,从而延长操作时间,而且可以获得更好的消融坑洞组织形貌,牙小管的开放程度较高,有利于黏接修复治疗。     

微流路生物芯片的研制

运用光刻、刻蚀技术在载玻片上刻蚀出条宽 70 μm、深 30 μm、长 7cm的沟槽 ,与另一载玻片键合 ,形成一微流路沟道 ,研制出了用于生物电泳技术的微流路生物芯片。在该芯片的研制中 ,克服了湿法腐蚀、断线、键合等技术难题。该芯片已经交付合作单位使用 ,能够满足应用中的基本性能要求     

Unusual Formation of ZnCo2O4 3D Hierarchical Twin Microspheres as a High‐Rate and Ultralong‐Life Lithium‐Ion Battery Anode Material

A facile two‐step strategy involving a polyol method and subsequent thermal annealing treatment is successfully developed for the large‐scale preparation of ZnCo₂O₄ various hierarchical micro/nanostructures (twin mcrospheres and microcubes) without surfactant assistance. To the best of our knowledge, this is the first report on the synthesis of ZnCo₂O₄ mesoporous twin microspheres and microcubes. More significantly, based on the effect of the reaction time on the morphology evolution of the precursor, a brand‐new crystal growth mechanism, multistep splitting then in situ dissolution recrystallization accompanied by morphology and phase change, is first proposed to understand the formation of the 3D twin microshperes, providing new research opportunity for investigating the formation of novel micro/nanostructures. When evaluated as anode materials for lithium‐ion batteries (LIBs), ZnCo₂O₄ hierarchical microstructures exhibit superior capacity retention, excellent cycling stability at the 5 A g^?1 rate for 2000 cycles. Surprisingly, the ZnCo₂O₄ twin microspheres show an exceptionally high rate capability up to the 10 A g^?1 rate. It should be noted that such super‐high rate performance and cycling stability at such high charge/discharge rates are significantly higher than most work previously reported on ZnCo₂O₄ micro/nanostructures and ZnCo₂O₄‐based heterostructures. The ZnCo₂O₄ 3D hierarchical micro/nanostructures demonstrate the great potential as negative electrode materials for high‐performance LIBs.     

AP对HATO热分解影响的机制

为详细了解高氯酸铵(AP)对5,5'-联四唑-1,1'-二氧二羟铵(HATO)热分解影响的机制,采用热重-质谱-傅里叶红外光谱(TG-MS-FTIR)联用技术、差示扫描量热法(DSC)、傅里叶红外光谱(FTIR)方法,对HATO和HATO/AP共混物的热分解特性、气体产物以及凝聚相变化进行了研究。结果表明,HATO具有两个连续热分解阶段,HATO/AP共混物则有3个热分解阶段;HATO、AP共混后,HATO使得AP熔融峰消失,AP可使HATO的热分解初始温度提前,热分解时间延长且不影响分解完全性;HATO热分解气体产物有CO_2、N_2O、HCN、NH_3、NO、N_2、H_2O,而HATO/AP共混物热分解产生气体主要有N_2、CO_2、N_2O、HCN、NH_3、H_2O、HCN、NO、HCl、NOCl;另外,采用等转化率法计算HATO和HATO/AP共混物四唑环基团的活化能分别为53.38 kJ·mol~(-1)和60.69 kJ·mol~(-1);通过对比HATO和HATO/AP共混物热分解特性以及凝聚相特征基团的变化,阐释了AP使HATO热分解温度提前的机理很可能是:AP的铵根离子与HATO之间发生了质子转移;推测AP导致HATO热分解时间延长的原因为:HATO/AP共混物产生的NH_3与热分解中间体1,1'-二羟基-5,5-联四唑(BTO)反应生成5,5'-联四唑-1,1'-二氧铵盐(ABTOX)。     

Particle on Bump (POB) technique for ultra-fine pitch chip on glass (COG) applications by conductive particles and adhesives

Chip on glass (COG) technology is widely used in liquid crystal display (LCD) modules for connecting driver ICs to the displays especially for middle and small size panels. The most common COG technology currently used in display applications is based on anisotropic conductive films (ACF). As the increasing demand in higher resolution and cost reduction, the bump pitch of the driver ICs becomes finer and finer. With the reduction of bump pitch, the current ACF based COG technology is confronted with two issues: one is the increase of the chances of open circuit; the other is the increase of the chances of forming shorts. A new approach for ultra-fine pitch chip on glass (COG) bonding, named ”Particle on Bump (POB)”, is proposed in this paper. In this technique, conductive particles are planted on the top surface of bumps of a driver IC through Au–Sn intermetallic connection. The driver IC is then assembled on the glass substrate of a LCD panel with an insulated adhesive by thermal press. The new method ensures that electrical connections are established only between bumps and corresponding pads. The Au–Sn reflow process for particle planting and corresponding COG bonding process were investigated in detail. The results showed that reliable connections were formed between particles and bumps through an Au–Sn intermetallic layer and final COG interconnections thus formed performed well in reliability tests. It is concluded that the POB technique overcomes the shortcomings of current ACF technique and has good potential to provide a viable ultra-fine pitch flip chip on glass solution for display applications.