转移法色交换

将图Ｇ的着色由一种变为中一种，通常用Ｋｅｍｐｅ法以交换。但是，对于某些情况，用此法无效。针对这个问题，本文提出了一种转移法色交换，它适用于平面图着色，方法直观，清晰且有效。     

Efficient design/simulation algorithms for simultaneous switching noise in leadframe packages

 Two new modeling and simulation approaches for Simultaneous Switching Noise (SSN) are described and compared to “brute force” simulation by SPICE. Both simulation accuracy and simulation run-time are considered. The two new approaches are: 1) the “effective inductance” method, in which an approximate, very efficient method of extracting an SSN L _eff  is utilized; and 2) the “macromodel” method, in which the complex inductance network responsible for SSN is represented by only a few dominant poles in the frequency domain and the time domain response is obtained by an efficient convolution algorithm. Both approaches are shown to be accurate and fast, but only the effective inductance algorithm is robust in numerical convergence. Received: 19 March 1997 / Accepted: 25 March 1997     

~（60）Co辐照对聚四氟乙烯表面润湿性的影响

研究了具有低表面能的氟聚合物聚四氟乙烯（ＰＴＦＥ），经６０Ｃｏγ射线辐照后表面状态的变化，以及其对液体介质蒸馏水的润湿性。较详细地论述了辐照后表面粗糙度、结晶度以及表面化学基因等不同因素对ＰＴＦＥ表面润湿性的影响。通过对ＰＴＦＥ及其表面的红外、Ｘ光衍射，表面粗糙度的分析，弄清了辐照后ＰＴＦＥ表面化学基团的改变对有机氟聚合物表加的润湿性影响很大，而粗糙度和结晶度的变化对润湿性影响较小。     

Classification and prediction of the critical heat flux using fuzzy theory and artificial neural networks

A new method to predict the critical heat flux (CHF) is proposed, based on the fuzzy clustering and artificial neural network. The fuzzy clustering classifies the experimental CHF data into a few data clusters (data groups) according to the data characteristics. After classification of the experimental data, the characteristics of the resulting clusters are discussed with emphasis on the distribution of the experimental conditions and physical mechanism. The CHF data in each group are trained in an artificial neural network to predict the CHF. The artificial neural network adjusts the weight so as to minimize the prediction error within the corresponding cluster. Application of the proposed method to the KAIST CHF data bank shows good prediction capability of the CHF, better than other existing methods.     

A simple method for extracting average doping concentration in thepolysilicon and silicon surface layer near the oxide in polysilicon-gateMOS structures

The author demonstrates a simple technique that extracts average doping concentration in the polysilicon and silicon near the oxide in a metal/polysilicon/oxide/silicon system. The technique is based on the maximum-minimum capacitance method on two large area structures-one MOSFET and one MOSC (MOS capacitor). The technique is simple and reliable since only three data points in the C-V data are required-two points in MOSC C-V and one point in MOSFET C-V. The technique avoids inaccuracy caused by interface traps at the polysilicon/oxide and the oxide/silicon interface. The technique can be implemented into fab routine electric-test procedures for simultaneously monitoring change of doping concentration in polysilicon and silicon during process development     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Effects of thymectomy and glucocorticoid therapy on peripheral lymphocytes in myasthenia gravis

Clinical manifestations and peripheral blood lymphocyte subset changes were studied in patients with myasthenia gravis (MG) to elucidate the mechanism of clinical improvement following treatment, with thymectomy (Tx) or glucocorticoid (GC) therapy. The changes found were: 1. There was a significant increase in percentages of CD3+, CD29+ CD4+ cells and CD4/CD8 ratio and a significant decrease in percentages of CD8+ and CD16,56+ cells in patients who had never been treated with any immune therapy. 2. After Tx or GC therapy, CD3+ and CD4+, CD29+ cells were decreased, but the number CD19+ and CD16, CD56 cells did not change. 3. Tx had a special effect on CD8+ cells. In most of the patients who showed clinical improvement after Tx, CD8+ cells were increased and CD4/CD8 ratio wad decreased. 4. Anti-acetylcholine receptor (AChRAb) titers were markedly decreased after GC therapy. These results indicate that there were obvious abnormalities in cell-mediated immunity in addition to those in humoral immunity in myasthenia gravis. These abnormalities tended to be normalized after Tx or GC therapy.     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied