Optical neurochip with learning capability

A dynamic optical neurochip with variable synaptic interconnection capability has been reported. A novel type of photodetector called a variable sensitivity photodetector has been developed for the synaptic interconnection of neural networks. It utilizes a metal-semiconductor-metal structure whose quantum efficiency can be modulated by an applied bias voltage. The fabricated dynamic optical neurochip consists of an 8×8 variable sensitivity photodetector (VSPD) array and an 8 line-shaped LED array. It is shown that this device is suitable for learning in neural networks. The application to pattern classification is demonstrated     

Human body detection in wet snowpack by an FM-CW radar

An FM-CW radar system was applied to detect a human body buried in a very wet snowpack. This radar uses the L-band microwave frequency with a maximum output power of 100 mW, and utilizes digital signal processing techniques. Field experiments were carried out to detect and map a human body embedded at a depth of 125 cm in a natural snowpack. The radar is shown to have a potential ability to detect avalanche victims, indicating that it may become a tool for snow rescuer operations     

A design technique for a high-gain, 10-GHz class-bandwidth GaAsMESFET amplifier IC module

A design procedure is proposed for a high-gain and wideband IC module, using stability analysis and a unified design methodology for ICs and packages. A multichip structure is developed using stability analysis and the requirements for stable operation are determined for each IC chip, package, and interface condition between them. Furthermore, to reduce the parasitic influences, several improvements in the interface and package design are clarified, such as wideband matching and LC resonance damping. IC design using effective feedback techniques for enlarging the bandwidth are also presented. The ICs are fabricated using 0.2-μm GaAs MESFET IC technology. To verify the validity of these techniques, an equalizer IC module for 10-Gb/s optical communication systems was fabricated, achieving a gain of 36 dB and a bandwidth of 9 GHz     

Temperature-compensation circuit techniques for high-density CMOSDRAMs

Temperature-compensation circuit techniques are presented for the CMOS DRAM internal voltage converter, the RC-delay circuit, and the back-bias generator, which do not need any additional process steps. The above-mentioned circuits have been designed and evaluated through a 16-Mb CMOS DRAM process. These circuits have shown an internal voltage converter (IVC) with an internal voltage temperature coefficient of 185 ppm/°C, and an RC-delay circuit with a delay time temperature coefficient of 0.03%/°C. As a result, a 6.5-ns faster RAS access time and improved latchup immunity have been achieved, compared with conventional circuit techniques     

Self-aligned silicide technology for ultra-thin SIMOX MOSFETs

The salicide technology using rapid thermal annealing was applied to MOSFETs on thin-film SOI. Since the SOI film was limited to a thickness of less than 100 nm, the silicidation reaction between Ti and Si atoms on the SOI surface exhibited new features that depended on the initial thickness of the deposited Ti. There was an optimum thickness of as-deposited Ti on silicidation due to the restricted thickness of the Si layer. Beyond the optimum point, the region adjacent to the silicided Si layer works as a Si source to assure stoichiometric TiSi₂. The subthreshold slopes and carrier mobilities were not changed by the salicide process. Junction leakage characteristics were slightly degraded; however, the change was small enough for device application. The influence on AC characteristics was well demonstrated for a high-speed CMOS ring oscillator with a gate length of 0.7 μm. The minimum delay time/stage was 46 ps/stage at 5 V. This gives 1.8 times higher speed operation than the controlled bulk CMOS ring oscillators with the same design rule     

A digital technique to estimate second-order distortion usinghigher order coherence spectra

A digital spectral method for evaluating second-order distortion of a nonlinear system, which can be represented by Volterra kernels up to second order and which is subjected to a random noise input, is discussed. The importance of departures from the commonly assumed Gaussian excitation is investigated. The Hinich test is shown to be an appropriate test for orthogonality in the system identification. Tests for Gaussianity of two important sources, which are commonly used for Gaussian inputs in nonlinear system identification, are presented: (1) commercial software routines for simulation experiments, and (2) noise generators for practical experiments. The deleterious effects of assuming a Gaussian input when it is not are demonstrated. The random input method for evaluating the second-order distortion of a nonlinear system is compared with the sine-wave input method using both simulation and experimental data. The approach is applied to a loudspeaker in the low-frequency band     

10 Gbit/s, 1200 km error-free soliton data transmission using erbium-doped fibre amplifiers

Soliton data signals at 10 Gbit/s have been successfully transmitted for the first time through a 1200 km dispersion-shifted fibre by using 24 erbium-doped fibre amplifiers. A bit error rate below 10/sup -13/ was obtained with 2/sup 20/-1 pseudorandom patterns.<>     

Advanced semiconductor lasers

Recent research activities in the field of advanced semiconductor lasers are reviewed with emphasis on highly stable single-wavelength lasers and surface-emitting (SE) lasers for wideband lightwave communication systems and optical parallel information processing. The operational characteristics of DSM (dynamic single-mode) lasers are summarized and requirements for high-performance operation as light sources for high-speed transmission or coherent communications are described. A type of DSM laser called the distributed-reflector (DR) laser is described as an advanced DSM laser which enables high efficiency, high power, and narrow linewidth operations. Specific features and the potential of SE lasers are summarized. Research activities and remaining problems to be solved for a breakthrough in optical parallel information processing are presented. The potential of multidimensional quantum-well structures, such as QW lasers and quantum-box lasers, is discussed in terms of superior characteristics in both stationary and dynamic operations. The present fabrication technologies for realizing high-performance lasers based on multidimensional QW structures are also presented     

4-phase sequences with near-optimum correlation properties

Two families of four-phase sequences are constructed using irreducible polynomials over Z₄. Family A has period L =2^r-1. size L+2. and maximum nontrivial correlation magnitude C_max⩽1+√(L+1), where r is a positive integer. Family B has period L=2(2^r-1). size (L+2)/4. and C_max for complex-valued sequences. Of particular interest, family A has the same size and period as the family of binary Gold sequences. but its maximum nontrivial correlation is smaller by a factor of √2. Since the Gold family for r odd is optimal with respect to the Welch bound restricted to binary sequences, family A is thus superior to the best possible binary design of the same family size. Unlike the Gold design, families A and B are asymptotically optimal whether r is odd or even. Both families are suitable for achieving code-division multiple-access and are easily, implemented using shift registers. The exact distribution of correlation values is given for both families     

A monolithic three-channel LD-PD array with vertically staggeredfacets for autofocusing reflectivity sensors

A monolithic three-channel LD-PD array with vertically staggered facets is proposed for an autofocusing reflectivity sensor which uses light feedback. The focus-sensing characteristics are investigated using an array with a radiation facet displacement of 12 μm and an interchannel distance of 130 μm, fabricated on an 830-nm AlGaAs/GaAs multiple-quantum-well laser substrate with buried-heterostructure stripe geometry waveguides. High focus-sensing accuracy is achieved. A potential application of the array to optical heads for phase change media is discussed