Pre-annealing induced oxide barrier to suppress the over-selenization of Mo contact

Molybdenum (Mo) is commonly used as the back contact material complying well with the formation of an ohmic contact for chalcogenide thin film solar cells. However, the easy formation of an over-thick MoSe₂ layer between the Cu₂ZnSn(S,Se)₄ absorber and Mo back contact significantly deteriorates the device performance. To overcome the degradation, the effects of thermal treatment on Mo layers have been investigated in this paper. It was found that pre-annealing Mo back contacts is effective to control the growth of interfacial MoSe₂ layer during selenization. Moreover, the thickness of MoSe₂ layer could be conveniently tailored by simply varying the pre-annealing temperature. The work provides direct proof that the appearance of a thin MoO₂ layer on the top of annealed Mo film indeed acts as a temporary barrier to block the over-selenization of Mo back contact.     

Comparison of gas sensing properties based on hollow and porous α-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanotubes

Hollow and porous α-Fe₂O₃ nanotubes were successfully synthesized by single nozzle electrospinning method followed by annealing treatment. The crystal structures and morphologies of the as-prepared materials were characterized by X-ray diffraction and scanning electron microscopy, respectively. The as-prepared materials were applied to construct gas sensor devices which gas sensing properties were further investigated. The obtained results revealed that porous α-Fe₂O₃ nanotube gas sensors exhibit a markedly enhanced gas sensing performance compared with hollow α-Fe₂O₃ nanotube gas sensors, which was about three times higher to 100 ppm acetone at 240 °C. Interestingly, hollow and porous α-Fe₂O₃ nanotube gas sensors both showed fast response–recovery time and good selectivity, but the porous ones possessed the shorter recovery time. The improved properties could be attributed to the unique morphology of porous nanotubes. Thus, further improvement of performance in metal-oxide-semiconductors materials could be realized by preparation the unique porous structures of nanotubes. Moreover, it is expected that porous metal-oxide-semiconductors nanotubes could be further design as promising candidates for gas sensing materials.     

3D成型SiO_2/PVA水凝胶支架的摩擦行为

利用3D成型技术,通过先成型后冷冻交联2步法制备不同孔隙率的SiO_2/聚乙烯醇(PVA)水凝胶支架,研究了SiO_2/PVA水凝胶支架的重复摩擦行为,分析了SiO_2/PVA水凝胶支架的摩擦原理。结果表明:SiO_2/PVA水凝胶支架能够保持三维贯通的立体结构,最大孔隙率可达42.3%。低摩擦速率(10-6~10-3 m/s)下,SiO_2/PVA水凝胶支架摩擦力稍高于块体SiO_2/PVA水凝胶,且随孔隙率的提高而稍有降低;而高摩擦速率(10-2~1m/s)下,SiO_2/PVA水凝胶支架和块体SiO_2/PVA水凝胶的摩擦力相近,孔隙率对支架摩擦力影响不明显。低正压力载荷(0.3kPa)下,SiO_2/PVA水凝胶支架重复摩擦性优于块体SiO_2/PVA水凝胶,这与支架结构能保持稳定的水润滑层相关。     

纳米RDX基PBX混合炸药的热分解特性和感度研究?

采用溶液-水悬浮法,通过控制料液质量比、包覆温度、搅拌速度等工艺参数制备了纳米RDX基PBX。使用TG/DSC同步热分析仪研究其热分解特性,并依据GJB 772A—1997分别对其撞击感度和摩擦感度进行了测试。结果表明:与微米RDX基PBX相比,纳米RDX基PBX的DTG峰温提前约0.6℃,活化能降低约2.5 k J/mol;纳米RDX基PBX撞击感度H_(50)为46.3 cm,微米RDX基PBX H_(50)为29.8 cm,相对降低55.4%;纳米RDX基PBX摩擦感度比微米RDX基PBX相对降低21.1%。     

固态微波功率器件测量夹具及其校准技术研究

固态微波功率器件由于其封装形式的特殊性,测量过程中必须引入测量夹具作为桥梁,才能完成接口形式的转换,进而开展测试工作。针对固态微波功率器件微波电参数在测试中,测量夹具给测量结果带来影响的问题,对固态微波功率器件测量夹具及其校准技术进行了研究。文章介绍了采用TRL校准方法,并利用矢量网络分析仪的误差修正功能来去除测量夹具误差,从而得到被测器件的真实性能参数。通过具体试验数据表明,对测量夹具的校准和误差的去除是可行有效的,从而可以在测量结果中去除测量夹具的影响而得到被测器件的"净"参数。     

Ag纳米颗粒等离激元光散射增强对Si刻蚀形貌的影响机制

通过实验与有限元(FDTD)模拟系统研究了不同粒径尺寸的Ag纳米颗粒在P(100)Si表面刻蚀过程中等离激元光散射增强对刻蚀孔形貌的影响。SEM结果表明,刻蚀孔由与粒径尺寸接近的垂直孔演化为一种上大下小的火炬状形貌特征孔,该孔的直径与纳米颗粒尺寸散射半径相仿。模拟不同粒径的Ag纳米颗粒进入刻蚀孔后的光散射特征,证实了Ag纳米颗粒等离激元散射对刻蚀孔初期形成的重要作用。分析表明,基于光照条件下电子-空穴的激发特征,刻蚀孔的形貌主要依赖Ag纳米颗粒等离激元散射的光增强,即通过改变入射光频率以及Ag纳米颗粒粒径可以有效地调控Si表面形貌特征。Ag纳米颗粒等离激元光散射增强技术在Si基太阳能电池、发光二极管(LED)器件等领域有潜在应用前景。     

墨水直写、喷墨打印和激光直写技术及其在微电子器件中的应用

直写技术是一种新型微加工技术,其加工过程不需模板并可在亚微米至厘米范围实现材料加工成型.墨水直写、喷墨打印和激光直写作为最常用的直写技术,具有强大的二维、三维成型能力和优异的成型精度,可实现金属、陶瓷、聚合物、水凝胶等复杂构型的程序化构筑,被广泛应用于微电子、组织工程、微流控等领域.阐述了这3种直写技术的构型原理和材料选择,重点介绍了其在微电子器件制造中的应用,讨论了当前研究的难点和热点问题,并对其未来发展趋势进行了展望.     

Routes for high-performance thermoelectric materials

Thermoelectric materials can be used in direct conversion of heat to electricity and vice versa. The past decade has witnessed the rapid growth of thermoelectric research, targeting high thermoelectric performance either via reduction in the lattice thermal conductivity or via enhancement of the power factor. In this review, we firstly summarize the recent advances in bulk thermoelectric materials with reduced lattice thermal conductivity by nano-microstructure control and also newly discovered materials with intrinsically low lattice thermal conductivity. We then discuss ways to enhance the electron transport abilities for achieving higher power factor by both novel and traditional methods. Finally, we highlight the recent development in single-crystal thermoelectric materials. These strategies are successful in synergistically manipulating the thermal conductivity and electron transport properties, which have significantly advanced thermoelectric performance on materials. For device applications on these high-performance materials, new opportunities may arise though stability, electrode contacts, mechanical properties, and other problems need to be solved in the near future.