A new simultaneous noise and input power matching technique formonolithic LNA's using cascode feedback

In this paper, a new simultaneous impedance-matching technique of Γ_opt (optimum noise-match source reflection coefficient) and G_max (maximum available power gain-match (MAPG) source reflection coefficient) using cascode feedback (CF) is proposed. A 1.57-GHz single-stage monolithic-microwave Integrated-circuit (MMIC) low-noise amplifier (LNA) designed with this technique has been fabricated using GaAs MESFET technology in order to verify the feasibility of this scheme. The measured response agrees well with the simulated performance. Extensive computer simulation shows that when silicon npn bipolar junction transistor (BJT) is used, this scheme enables us to make both Γ_opt and G_max points near to 50 Ω, in addition to the simultaneous noise and input power matching. In addition, it has all the advantages of negative feedback such as stability, wider bandwidth, and insensitivity against parameter variation     

Development of the Base Station Controller and Manager in the CDMA Mobile System

The base station (BS) in the CDMA Mobile System (CMS) connects calls through the radio interface and is designed to provide mobile subscribers with high quality service in spite of mobile subscribers’ motions. The BS consists of multiple base station transceiver subsystems (BTSs), a base station controller (BSC) and a base station manager (BSM). This paper is concerned with the BSC and the BSM. The BSC is located between the BTSs and the mobile switching center (MSC) connected with the public network, and is responsible for controlling mobile calls from and to mobile subscribers via the BTSs. The BSM provides operator-interfaces per the BS and takes responsibility of operation and maintenance (OAM) of the BS. Design of the BSC is based on two module types: functional module and unit module. The functional module is used to support new services easily and the unit module to increase the system capacity economically. Both modular types are easily achieved by inserting the corresponding modules to the system. Particularly, in order to efficiently support the soft handover which is one of CDMA superior advantages, the BSC adopts a large high-speed packet switch connecting up to 512 BTSs, and thus mobile subscribers can be provided with soft handover in high probability. The BSM is based on a commercial workstation to support OAM functions efficiently and guarantee high reliability of the functions. The BSM uses graphical user interface (GUI) for efficient OAM functions of the BS.     

A Novel and Efficient Feature Extraction Method for Iris Recognition

With a growing emphasis on human identification, iris recognition has recently received increasing attention. Iris recognition includes eye imaging, iris segmentation, verification, and so on. In this letter, we propose a novel and efficient iris recognition method which employs a cumulative‐sum‐based grey change analysis. Experimental results demonstrate that the proposed method can be used for human identification in efficient manner.     

Solution‐Processable,High‐Performance Flexible Electroluminescent Devices Based on High‐k Nanodielectrics

Flexible alternating‐current electroluminescent (ACEL) devices have attracted considerable attention for their ability to produce uniform light emission under bent conditions and have enormous potential for applications in back lighting panels, decorative lighting in automobiles, and panel displays. Nevertheless, flexible ACEL devices generally require a high operating bias, which precludes their implementation in low power devices. Herein, solution‐processed La‐doped barium titanate (BTO:La) nanocuboids (≈150 nm) are presented as high dielectric constant (high‐k) nanodielectrics, which can enhance the dielectric constant of an ACEL device from 2.6 to 21 (at 1 kHz), enabling the fabrication of high‐performance flexible ACEL devices with a lower operating voltage as well as higher brightness (≈57.54 cd m^?2 at 240 V, 1 kHz) than devices using undoped BTO nanodielectrics (≈14.3 cd m^?2 at 240 V, 1 kHz). Furthermore, a uniform brightness across the whole panel surface of the flexible ACEL devices and excellent device reliability are achieved via the use of uniform networks of crossaligned silver nanowires as highly conductive and flexible electrodes. The results offer experimental validation of high‐brightness flexible ACELs using solution‐processed BTO:La nanodielectrics, which constitutes an important milestone toward the implementation of high‐k nanodielectrics in flexible displays.     

A 15 nm Ultra‐thin Body SOI CMOS Device' with Double Raised Source/Drain for 90 nm Analog Applications

Fully‐depleted silicon‐on‐insulator (FD‐SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the singleraised (SR) and double‐raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self‐heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self‐heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a 1.1 µm² 6T‐SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra‐thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.     

Monolithic integration of microlensed resonant photodetectors andvertical cavity lasers

Monolithic integration of high performance microlensed resonant photodetectors and vertical cavity lasers (VCLs) from a single epitaxial growth is presented. The VCLs have sub-200 μA threshold currents. Adjacent detectors have the same operating wavelength and responsivities of ~0.4 A/W with ~6 nm optical bandwidths     

Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates

We have investigated the thermal degradation of gate oxide in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon and consequently to the gate oxide occurs upon thermal cycling processes, which results in the dielectric breakdown of the gate oxide. We also found that the Ti-diffusion is suppressed by the employment of the thin (about 5 nm) titanium nitride (TiN) diffusion barrier layer, which consequently improved the reliability characterisitics of gate oxide significantly.     

On algorithms for digital signal processing of sequences

In this work, we analyze the algebraic structure of fast algorithms for computing one- and two-dimensional convolutions of sequences defined over the fields of rational and complex rational numbers. The algorithms are based on factorization properties of polynomials and the direct sum property of modulo computation over such fields. Algorithms are described for cyclic as well as acyclic convolution. It is shown that under certain nonrestrictive conditions, all the previously defined algorithms over the fields of rational and complex rational numbers are also valid over the rings of finite integers. Examples are presented to illustrate the results.     

Dynamic laser control using feedback from a gain grating

We demonstrate that self-induced gain gratings can provide nonlinear optical feedback that results in single frequency selection and passive self Q-switching of a conventional linear laser cavity. An experimental Nd:YAG laser system is described that yields a temporally-smooth 20 ns pulse at 1.064 μm. In addition, we show that the feedback has phase-conjugate properties that permit “flower-like” mode formation even though the azimuthal symmetry of the cavity is broken     

Polarity control of GaN epilayers grown on ZnO templates

We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH₃ is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH₃ pre-exposure helps form a Zn₃N₂ layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.