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排序方式: 共有10000条查询结果,搜索用时 15 毫秒
31.
Qiang Wang Lei Shen Tong Xue Gao Cheng Cheng Zhi Huang Hong Jin Fan Yuan Ping Feng 《Advanced functional materials》2021,31(2):2002187
The {100} facet of single-crystalline TiO2(B) is an ideal platform for inserting Li ions, but it is hard to be obtained due to its high surface energy. Here, the single-crystalline TiO2(B) nanobelts from H2Ti3O7 with nearly 70% {100} facets exposed are synthesized, which significantly enhances Li-storage capacity. The first-principle calculations demonstrate an ab in-plane 2D diffusion through the exposed {100} facets. As a consequence, the nanobelts can significantly accommodate Li ions in LiTiO2 formula with specific capacity up to 335 mAh g−1, which is in good agreement with the electrochemical characterizations. Coating with conductive and protective poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), the cut-off discharge voltage is as low as 0.5 V, leading to a capacity of 160.7 mAh g−1 after 1500 cycles with a retention rate of 66% at 1C. This work provides a practical strategy to increase the Li-ion capacity and cycle stability by tailoring the crystal orientation and nanostructures. 相似文献
32.
Lin Gao Stefano Selleri Giorgio Battistelli Luigi Chisci Giuseppe Pelosi 《国际射频与微波计算机辅助工程杂志》2020,30(9)
This paper presents a novel approach to the localization of moving targets in a complex environment based on the measurement of the perturbations induced by the target presence on an independently‐generated time‐varying electromagnetic field. Field perturbations are measured via a set of sensors deployed over the domain of interest and used to detect and track a possible target by resorting to a particle Bernoulli filter (PBF). To comply with real‐time operation, the PBF works along with an artificial neural network (ANN) model of the environment trained offline via finite elements (FEs). The performance of the proposed algorithm is assessed via simulation experiments. 相似文献
33.
34.
垦71井区三维VSP资料波场分离方法应用研究 总被引:8,自引:5,他引:3
三维VSP资料是多偏移距VSP资料,资料中多种类型的波叠合在一起形成复杂波场。从复杂波场中分离出单一的保幅反射波波场是三维VSP波场分离的重要工作。常规二维VSP波场处理方法单一,难以适用于复杂的三维波场处理。针对三维VSP资料的波场特点,以分离上行反射P波为例,将单一波场分离方法加以适当组合,对垦71井区三维VSP实际资料进行了应用研究。结果表明,波场分离处理中叠加消去法和中值滤波相结合以及F—K滤波和中值滤波相结合的方法克服了单一方法的缺陷,波场处理后获得了波组特征明显、波场清晰单一的上行反射P波保幅波场,取得了较好的波场分离效果。 相似文献
35.
L. Gao P. Hrter Ch. Linsmeier J. Gstttner R. Emling D. Schmitt-Landsiedel 《Materials Science in Semiconductor Processing》2004,7(4-6):331
Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt3)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO2/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO2/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO2 substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas. 相似文献
36.
针对不同地质目标的叠前时间偏移成像解释评价 总被引:3,自引:0,他引:3
随着计算机硬件和地震勘探成像技术的发展,叠前时间偏移正逐步替代常规的NMO加DMO加叠后时间偏移成为地震数据成像处理方法的主流。但对于不同的地质目标,叠前时间偏移的成像效果是否优于常规NMO加DMO加叠后时间偏移的成像效果呢?为此,从地震数据成像处理方法、处理流程和处理参数等方面进行了讨论,并基于某地区三维数据常规处理结果和叠前时间偏移处理结果,针对不同地质目标进行了剖析与评价。认为:叠前时间偏移成像的垂向分辨率较常规处理明显降低,但对于空间波阻抗变化明显的河流和断层,叠前时间偏移成像的空间分辨率要高于常规处理;对于小于1/4波长的叠置薄储层,叠前时间偏移成像的垂向和空间分辨率低于常规处理结果。 相似文献
37.
39.
P. G. Muzykov Y. I. Khlebnikov S. V. Regula Y. Gao T. S. Sudarshan 《Journal of Electronic Materials》2003,32(6):505-510
To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement
techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable
graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique,
and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values
of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable
graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe
method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer
was also obtained and reported in this work. 相似文献
40.