Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET

Impact of the discrete dopants on device performance is crucial in determining the behavior of nanoscale semiconductor devices. Atomistic quantum mechanical device simulation for studying the effect of discrete dopants on device's physical quantities is urgent. This work explores the physics of discrete-dopant-induced characteristic fluctuations in 16-nm fin-typed field effect transistor (FinFET) devices. Discrete dopants are statistically positioned in the three-dimensional channel region to examine associated carrier's characteristic, concurrently capturing “dopant concentration variation” and “dopant position fluctuation”. An experimentally validated quantum hydrodynamic device simulation was conducted to investigate the potential profile and threshold voltage fluctuations of the 16-nm FinFET. Results of this study provide further insight into the problem of fluctuation and the mechanism of immunity against fluctuation in 16-nm devices.     

Similarity-based image organization and browsing using multi-resolution self-organizing map

An algorithm is presented in this paper to facilitate the exploration of large image collections based on visual similarities. Starting with an unordered and unannotated set of images, the algorithm first extracts the salient details into feature vectors using both color and gradient information. The feature vectors are then used to train a self-organizing map which maps high-dimensional feature vectors onto a 2D canvas so that images with similar feature vectors are grouped together. When users browse the image collection, an image collage is generated that selects and displays the most pertinent set of images based on which portion of the 2D canvas is currently in view. Flowing from an overview to details is a seamless operation controlled simply by pan and zoom, with representative images selected in a consistent and predictable way. To make organizing larger image collections practical in interactive time, the organization algorithm is designed to run in parallel on graphics processing units. Overall this paper presents an end-to-end solution that facilitates the surfing of image collections in a fresh way.     

砂土的剪胀方程及其塑性势(Ⅰ):发展现状

以能量守恒原理为主线,在各向同性前提下,对Taylor剪胀方程、Cam-clay剪胀方程、修正Cam-clay剪胀方程、Rowe剪胀方程和扩展的Rowe剪胀方程等进行了较全面的综述.论证了剪胀方程和塑性势函数之间的相互转化关系.指出了Lade-Kim塑性势函数和Nova塑性势函数的缺陷之处,即这两个塑性势函数均没有合理耦合临界状态这一概念.     

工业建设项目可研报告中市场预测的定性分析

众所周知，市场预测是投资项目可行性研究报告中一项非常重要的内容，是科学决策的主要依据。市场预测是对项目的产出品和所需的主要投入品的市场容量、价格、竞争力、营销策略以及市场风险进行分析预测。     

VB应用于测控系统时存在的问题及解决方法

本文针对Visual Basic在用于测控系统时存在的诸如数据实时采集、数据存储及打印、注册表应用等问题进行分析并给出相应的解决方案。     

一种高效的因特网密钥交换协议(IKE)的研究与实现

KE协议是因特网安全协议IPSec的重要组件,它的高效实现对整个IPSEC协议具有重要意义。论文分析了目前通用的IKE协议实现方案,针对其协商状态和安全连接(SA)素材分离的缺点,给出了一种基于保护套件封装的IKE实现,并对该实现进行了性能测试和分析,测试结果表明该实现是一种高效、合理的IKE协议系统。     

A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

A quantum correction model for nanoscale double-gate MOSFETs under inversion conditions is proposed. Based on the solution of Schrödinger-Poisson equations, the developed quantum correction model is optimized with respect to (i) the left and right positions of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) the total inversion charge sheet density, and (iv) the average inversion charge depth, respectively. This model can predict inversion layer electron density for various oxide thicknesses, silicon film thicknesses, and applied voltages. Compared to the Schrödinger-Poisson results, our model prediction is within 3.0% of accuracy. This quantum correction model has continuous derivatives and is therefore amenable to a device simulator.     

Extrapolation Model of High Temperature Creep for 12Cr1MoV Steel

The creep curves of heat resistant steel 12Cr1MoV was investigated. by constant stress creep tests. The creep curves of constant stress creep are quite different from that of constant load creep. The original θ- Concept Project procedure can be validated to successfully describe the constant stress creep curves but not constant load creep. A modified θprocedure was developed. This approach can successfully described both constant stress creep and constant load creep curves. The new approach leads to a great improvement in accuracy of long term prediction of extrapolation due to validation of a great number of existing constant load creep data.     

添加晶种对硅酸盐水泥生料易烧性影响的研究

采用实验室制备不同种类单矿物，纯熟料及白水泥熟料为晶种，利用ＤＴＡ，ＸＲＤ及测定游离石灰等方法，研究了其对硅酸盐水泥生料易烧性的影响。结果表明；铁相的作用在四种单矿物中最为明显，其它三种主要矿物也均有不同程度地促进煅烧过程的熟料矿物形成的作用。     

A novel integrated silicon capacitive microphone-floating electrode“electret” microphone (FEEM)

A novel principle “electret” microphone, i.e., floating electrode electret microphone, is proposed and implemented in this study. Single-chip fabrication and corrugation technique are used in the design and fabrication of the microphone. The floating electrode is encapsulated by highly insulated materials to ensure that there is no electric-leakage passage between the floating electrode and the electrodes of the microphone. Net-free electronic charges (not “bonded” charges as in traditional electret) in the floating electrode can excite the electric field, which is similar to that of the traditional electret. The floating electrode can be easily charged by use of the “hot” electron technique, available using the avalanche breakdown of the p⁺-n junction. Therefore, the electret microphone is rechargeable, which can greatly increase the lifetime of the device. The preamplifier has been on-chip integrated in a junction-field-effect transistor (JFET) source-follower type with resistors by use of ion implantation. Electret charges are banded in a deep potential trap, thus, this microphone can operate at a high temperature (as high as 300°C) and has high stability and reliability. Experiments show that the prototype has a 3-mV/Pa sensitivity and a larger than 21-kHz frequency bandwidth in a 1 mm ×1-mm diaphragm area. Microphone performance can be further improved by optimized process and design. The fabrication is completely integrated-circuit (IC) compatible, hence, the microphone shows promise in integrated acoustic systems