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31.
32.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
33.
珠光体球化的分形研究 总被引:7,自引:2,他引:5
珠光体球化反映到金相上,是一种不规则图像的变化,并且具有分形的特征,可望用分形几何的方法来进行描述。以Cr-Mo钢的珠光体球化为例,用分形维数来描述珠光体球化程度;用小岛法对15CrMo钢的珠光体球化图谱进行了测量。实验表明,珠光体球化从1级到6级,其相应的分形维数范围为1.3156-1.9282。从电厂运行了10^5h的15CrMo钢管上取样,实测了该试样的珠光体球化等级,结果表明,以分形维数表示的球化程度与按图谱评定的球化等级完全吻合。 相似文献
34.
Ray-Guang Cheng Cun-Yi Wang Li-Hung Liao Jen-Shun Yang 《Communications Letters, IEEE》2006,10(2):123-125
This work presents a wireless token-passing protocol, named Ripple, for wireless mesh networks (WMNs). In contrast to existing random-access approaches, Ripple uses a decentralized controlled-access approach to protect nodes from unintentional packet collisions and maximize the spatial reuse. The performance of Ripple under an error-free wireless channel was investigated and the accuracy of the analysis was verified by simulation. Simulation results also indicated that Ripple achieved throughput, stability, and QoS enhancement than that of 802.11 DCF under a highly loaded situation. 相似文献
35.
36.
Yuhua Cheng Chih-Hung Chen Matloubian M. Deen M.J. 《Electron Devices, IEEE Transactions on》2002,49(3):400-408
High-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both y parameter and fT characteristics. Good model accuracy is achieved against measurements for a 0.25 μm RF CMOS technology. The HF noise predictivity of the model is also examined with measured data. Furthermore, a methodology to extract the channel thermal noise of MOSFETs from HF noise measurements is presented. By using the extracted channel thermal noise, any thermal noise models can be verified directly. Several noise models including the RF model discussed in this paper have been examined, and the results show that the RF model can predict the channel thermal noise better than the other models 相似文献
37.
Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication 相似文献
38.
介绍新型低压抽屉式开关柜的结构性能和特点,并与早期低压柜作了比较。阐述了新型低压抽屉式开关柜在冶金系统应用中的几点改进情况。 相似文献
39.
This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method 相似文献
40.