Virtual circuit connection method for RSVP multicasting supportingheterogeneous receivers on the ATM network

The authors suggest a novel virtual circuit connection method based on the reverse traversing technique to minimise the waste of network bandwidth resources, when the Internet protocol multicast is interoperated using the resource reservation protocol over an asynchronous transfer mode network. Simulation results show that, as the number of receivers increases, the bandwidth requirements on all links of the network of the proposed scheme become more advantageous than those of other conventional methods     

Interfacial reactions in the squeeze-cast (SAFFIL+C)/SAE 329 Al composite

Interfacial reactions in the squeeze-cast SAE 329 Al alloy reinforced with SAFFIL and carbon fibers were investigated using scanning and transmission electron microscopy and secondary ion mass spectroscopy. The SiO₂ layer added as a binder for the preform of SAFFIL fiber appeared to prevent excessive reaction between the fiber and the molten Al alloy during casting. In the as-cast composite, the reaction between the SiO₂ layer and the Al alloy is considered to produce MgO crystals in the vicinity of SAFFIL fiber. With subsequent heat treatment of the composite to the T6 condition, small crystals of MgO and MgAl₂O₄ were found to form at the surface of SAFFIL fiber as a result of interfacial reaction between the SiO₂ layer and the Al alloy. Even at the T6 condition, significant reactions between the Al alloy and SAFFIL fiber itself were not observed, indicating the effective role of the binder layer in suppressing the degradation of SAFFIL fiber by reaction with the Al alloy.     

HEURISTIC APPROACHES FOR LOADING PROBLEMS IN FLEXIBLE MANUFACTURING SYSTEMS

Flexible manufacturing systems (FMSs) are able to process a wide variety of operations, but the specific mix of operations that can be performed at any point in time depends upon the combination of tools loaded onto the machines. The machines have tool magazines with finite capacities. We consider the problem of assigning operations and their associated tools to machines (or groups of machines) to maximize the throughput for a specified steady-state mix of orders. Since this objective is difficult to deal with directly, we use an intermediate objective of meeting workload targets for each machine group as closely as possible. A certain form of this intermediate objective has been shown to correlate highly with the original objective.

Since it is computationally intractable to find optimal solutions for problems with more than 20 operations, fast heuristic algorithms are developed. These algorithms are adapted from multi-dimensional bin-packing algorithms. Computational results are reported.     

Rapid and comprehensive indicator for evaluation of performance of treatment processes and of river waters.

Naturally occurring UV active compounds, commonly present in almost all source waters, can be rapidly monitored by their ultraviolet absorbance at 260 nm (E260). Herein, the extent of correlation between the E260 and the removal efficiency of the hazardous contaminants, endocrine disrupters and dioxins, were investigated using various treatment and river source waters. The detection of various types of hazardous contaminants using sophisticated analytical methods, such as high resolution gas chromatography (HRGC)/high resolution mass spectrometry (HRMS) and high performance liquid chromatography (HPLC)/inductively coupled plasma (ICP)/mass spectrometry (MS), as well as various short-term bioassays, can require hours or even days for results to be obtained. The removal of the E260 correlated well with those of individual contaminants, such as endocrine disruptor chemicals and dioxins, with the various treatment processes employed. In the plots of the endocrine disrupters against the DOC/E260, a correlation was found with the endocrine activity of the Korean/Japanese river waters employed in this study.     

StoryGrid [educational computing]

The StoryGrid project undertook studying the role new interface technologies might play in education, particularly at the high school level. Unfortunately, technology often seizes center stage in high school classrooms; i.e., it becomes the topic of instruction. We believe that learning about technology would be most successful when technology is not the topic, but simply a tool used during instruction. StoryGrid, therefore, was designed to support and to enhance existing narrative activity in classrooms by adhering to the following goals: trigger reflection and interpretation, accommodate individual expression and encourage student discourse.     

Visual insights into high-resolution earthquake Simulations.

This study focuses on the visualization of a series of large earthquake simulations collectively called TeraShake. The simulation series aims to assess the impact of San Andreas Fault earthquake scenarios in Southern California. We discuss the role of visualization in gaining scientific insight and aiding unexpected discoveries.     

Exploiting ILP, TLP, and DLP with the polymorphous trips architecture

The Tera-op reliable intelligently adaptive processing system (TRIPS) architecture seeks to deliver system-level configurability to applications and runtime systems. It does so by employing the concept of polymorphism, which permits the runtime system to configure the hardware execution resources to match the mode of execution and demands of the compiler and application.     

Data retention characteristics of sub-100 nm NAND flash memory cells

In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.     

Presenting information on the small-screen interface: effects of table formatting

This study explored strengths and limitations of table formatting choices by engaging twenty-eight participants in information searches in online tables, presented on a small-screen interface (Palm IIIc). Table length across conditions was held constant at three screens long (24 rows total) but varied from one to three screens wide (approximately 35, 70, and 105 characters per line). Target information was positioned in either the upper left, lower left, upper right, or lower right quadrants. Data collected were time on task, error rate, and level of participants' confidence in their answers. Experimenters found that increased horizontal scrolling imposed the heaviest burden on information search. This study supports restricting table widths to one screen on handheld computers. If necessary, however, tables can go to two screens wide without critical detriment to usability. While ruled line formatting is slightly better than interface character in providing visual support for the burden of horizontal scrolling, neither formatting option adequately compensates for the added burden.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.