A compact-size microstrip spiral resonator and its application to microwave oscillator

This letter presents a compact size microstrip spiral resonator and its application to a low phase noise oscillator. This resonator has stopband characteristics to be used in the series feedback oscillator topology. The whole circuit area of the proposed resonator is within 1/10 wavelength, which results in the reduction of the circuit area and cost. A 10-GHz oscillator incorporated with this resonator was designed, fabricated and measured. It shows low phase noise performance of -95.4-dBc/Hz at 100 kHz offset.     

用于先进PCB制造工艺的叠层封装

在20世纪90年代,球栅阵列封装(BGA)和芯片尺寸封装(CSP)在封装材料和加工工艺方面达到了极限。这2种技术如同20世纪80年代的表面安装器件(SMD)和70年代通孔安装器件(THD)一样,在电学、机械、热性能、尺寸、质量和可靠性方面达到最大值。目前,三维封装正在成为用于未来采用的先进印制板(PCB)制造工艺的下一个阶段。它们可以分为圆片级封装、芯片级封装、和封装面。叠层封装(PoP)是一种封装面叠层封装类型的三维封装技术[15]。     

A 12-b, 10-MHz, 250-mW CMOS A/D converter

A 12-b, 10-MHz, 250-mW, four-stage analog-to-digital converter (ADC) was implemented using a 0.8-μm p-well CMOS technology. The ADC based on a digitally calibrated multiplying digital-to-analog converter (MDAC) selectively employs a binary-weighted capacitor array in the front-end stage and a unit-capacitor array in the remaining back-end stages to obtain 12 b level linearity while maintaining high yield. All the analog and digital circuit functional blocks are fully integrated on a single chip, which occupies a die area of 15 mm² (4.2 mm×3.6 mm). Measured differential nonlinearity (DNL) and integral nonlinearity (INL) of the prototype are less than ±0.8 LSB and ±1.8 LSB, respectively     

Binary blends of nylons with ethylene vinyl alcohol copolymers: Morphological,thermal, rheological,and mechanical behavior

Binary blends of ethylene vinyl alcohol copolymers, containing 62 (EVOH-62) and 71 (EVOH-71) mole percent vinyl alcohols, with nylons (nylon-6, nylon-6/12, and nylon-12) have been prepared from melt mixing in a twin screw compounding machine. Morphological, thermal, rheological, and mechanical properties were determined. EVOH-62/nylon-6 and EVOH-71/nylon-6 blends showed homogeneous phase morphologies in the nylon-6-rich region, and fine phase separations (c.a. 2 × 10^?7 m) in the EVOH-rich region. Melting point depression, positive deviations in viscosity and flexural modulus, and negative deviation in impact strength from the simple additive rule were generally observed. And the results were possibly interpreted in terms of compatibility and increased nylon/EVOH interactions over the nylon/nylon interactions. On the contrary, clean phase separations in large domains were observed from EVOH-71/nylon-6/12 and EVOH-71 /nylon-12 blends. Fibrillation was also obtained from EVOH rich blends. Probably due to the incompatible nature of these blends, yield at low rate of shear and a mechanical property drop were also observed.     

Enabling On-Demand Conformal Zn-Ion Batteries on Non-Developable Surfaces

Conventional power sources encounter difficulties in achieving structural unitization with complex-shaped electronic devices because of their fixed form factors. Here, it is realized that an on-demand conformal Zn-ion battery (ZIB) on non-developable surfaces uses direct ink writing (DIW)-based nonplanar 3D printing. First, ZIB component (manganese oxide-based cathode, Zn powder-based anode, and UV-curable gel composite electrolyte) inks are designed to regulate their colloidal interactions to fulfill the rheological requirements of nonplanar 3D printing, and establish bi-percolating ion/electron conduction pathways, thereby enabling geometrical synchronization with non-developable surfaces, and ensuring reliable electrochemical performance. The ZIB component inks are conformally printed on arbitrary curvilinear substrates to produce embodied ZIBs that can be seamlessly integrated with complicated 3D objects (including human ears). The conformal ZIB exhibits a high fill factor (i.e., areal coverage of cells on underlying substrates, ≈100%) that ensures high volumetric energy density (50.5 mWh cm_cell⁻³), which exceeds those of previously-reported shape-adaptable power sources.     

Improvement of the cell performance in the ZnS/Cu(In,Ga)Se2 solar cells by the sputter deposition of a bilayer ZnO : Al film

ZnS is a candidate to replace CdS as the buffer layer in Cu(In,Ga)Se₂ (CIGS) solar cells for Cd‐free commercial product. However, the resistance of ZnS is too large, and the photoconductivity is too small. Therefore, the thickness of the ZnS should be as thin as possible. However, a CIGS solar cell with a very thin ZnS buffer layer is vulnerable to the sputtering power of the ZnO : Al window layer deposition because of plasma damage. To improve the efficiency of CIGS solar cells with a chemical‐bath‐deposited ZnS buffer layer, the effect of the plasma damage by the sputter deposition of the ZnO : Al window layer should be understood. We have found that the efficiency of a CIGS solar cell consistently decreases with an increase in the sputtering power for the ZnO : Al window layer deposition onto the ZnS buffer layer because of plasma damage. To protect the ZnS/CIGS interface, a bilayer ZnO : Al film was developed. It consists of a 50‐nm‐thick ZnO : Al plasma protection layer deposited at a sputtering power of 50 W and a 100‐nm‐thick ZnO : Al conducting layer deposited at a sputtering power of 200 W. The introduction of a 50‐nm‐thick ZnO : Al layer deposited at 50 W prevented plasma damage by sputtering, resulting in a high open‐circuit voltage, a large fill factor, and shunt resistance. The ZnS/CIGS solar cell with the bilayer ZnO : Al film yielded a cell efficiency of 14.68%. Therefore, the application of bilayer ZnO : Al film to the window layer is suitable for CIGS solar cells with a ZnS buffer layer. Copyright © 2012 John Wiley & Sons, Ltd.     

A novel hybrid silica wide-band amplifier covering S+C+L bands with 105-nm bandwidth

We report a novel hybrid optical amplifier covering S+C+L bands with 105-nm total bandwidth using a silica fiber. The principle of amplification is based on the stimulated radiative transition of Er-ions for C-band and on the stimulated Raman scattering for S- and L-band, respectively. In this letter, we analyze the amplification characteristics for two types of active fiber mediums through numerical simulation. One is a silica fiber configured with Er-doped cladding and Ge-doped core and the other is a medium consisting of Er-doped fiber and dispersion-compensating fiber. By optimizing parameters such as fiber length and pump power, we newly achieve wide-band amplification with 105-nm bandwidth showing a flat gain characteristic over the entire S+C+L bands.     

A Framework for MPEG‐4 Contents Delivery over DMB

Digital Multimedia Broadcasting (DMB) is an upcoming standard in Korea used to provide mobile multimedia broadcasting service based on the Eureka‐147 Digital Audio Broadcasting (DAB) system. The current dominant multimedia coding standard, MPEG‐4, is foreseen to play an important role in forthcoming DMB services. However, the current approaches for transporting MPEG‐4 content over DMB networks are not optimized. To address this issue we propose a novel MPEG‐4 stream multiplexer, called M4SMux, which provides better stream multiplexing and delivery over DMB networks. M4SMux features an MPEG‐4 elementary‐stream interleaving mechanism that reduces the multiplexing overhead and a multiplex configuration mechanism that utilizes M4SLinkTable for easy content access. In addition, we propose an error correction method which enhances transport efficiency.     

Holography and plasma oxidation for uniform nanoscale two dimensional channel formation of vertical organic field-effect transistors with suppressed gate leakage current

Vertical organic field-effect transistors (VOFETs) with nanoscale channel openings have been fabricated using pentacene as an active layer material. To achieve uniform nanoscale two-dimensional channel openings, a laser holography lithography has been introduced. Uniformly distributed and well-aligned holes with 250 nm diameter were successfully obtained with the laser holography lithography. VOFET devices with these channel openings have shown high on/off ratio of about 10³ without any further treatment. Gate leakage current was also decreased with an additional insulating layer generated on the gate electrode sidewall via plasma oxidation.