Trichothecene 3-O-acetyltransferase protects both the producing organism and transformed yeast from related mycotoxins. Cloning and characterization of Tri101

Trichothecene mycotoxins such as deoxynivalenol, 4,15-diacetoxyscirpenol, and T-2 toxin, are potent protein synthesis inhibitors for eukaryotic organisms. The 3-O-acetyl derivatives of these toxins were shown to reduce their in vitro activity significantly as assessed by assays using a rabbit reticulocyte translation system. The results suggested that the introduction of an O-acetyl group at the C-3 position in the biosynthetic pathway works as a resistance mechanism for Fusarium species that produce t-type trichothecenes (trichothecenes synthesized via the precursor trichotriol). A gene responsible for the 3-O-acetylation reaction, Tri101, has been successfully cloned from a Fusarium graminearum cDNA library that was designed to be expressed in Schizosaccharomyces pombe. Fission yeast transformants were selected for their ability to grow in the presence of T-2 toxin, and this strategy allowed isolation of 25 resistant clones, all of which contained a cDNA for Tri101. This is the first drug-inactivating O-acetyltransferase gene derived from antibiotic-producing organisms. The open reading frame of Tri101 codes for a polypeptide of 451 amino acid residues, which shows no similarity to any other proteins reported so far. TRI101 from recombinant Escherichia coli catalyzes O-acetylation of the trichothecene ring specifically at the C-3 position in an acetyl-CoA-dependent manner. By using the Tri101 cDNA as a probe, two least overlapping cosmid clones that cover a region of 70 kilobase pairs have been isolated from the genome of F. graminearum. Other trichothecene biosynthetic genes, Tri4, Tri5, and Tri6, were not clustered in the region covered by these cosmid clones. These new cosmid clones are considered to be located in other parts of the large biosynthetic gene cluster and might be useful for the study of trichothecene biosynthesis.     

A super-dynamic flip-flop circuit for broad-band applications up to24 Gb/s utilizing production-level 0.2-μm GaAs MESFETs

This paper describes a novel dynamic flip-flop (FF) circuit that can operate 30% faster than conventional clocked inverter-type FFs. A new wideband clock buffer is introduced to cover the FF operation range. An 8- to 24-Gb/s decision circuit and a 9- to 26-GHz 1/2 frequency divider were developed utilizing production-level 0.2-μm GaAs MESFET technology     

Chlorine auto-doping by chloride vapor phase epitaxial growth of InP

Chlorine auto-doping phenomenon was found for the first time in InP epitaxial growth by using a PCl₃/InP/H₂ system. Chlorine atoms act as a donor in the epitaxial layer and the carrier concentration is dependent on the facet of InP substrate. The carrier concentration of the InP layer on ( 111)B facet was over 10³ times higher than that on (111)A substrate.     

Influence of anti-LDL receptor antibody on the transfer of cholesterol from LDL to isolated lymphocytes in normal subjects

Results 2 1/2 years after an enuresis nocturna training are presented, including rate of success, percentage and duration of relapse for 113 children (mean age 11.6 year at the start of the training). The bibliotherapeutic treatment by parents did not require any intervention by a professional. Behaviour of parents in the event of a relapse differed between training conditions. Children in the Arousal condition recovered faster from a relapse, 90% of their parents used the Arousal training again at relapse or did not intervene at all and none of them consulted a professional. Clearly they had confidence in the method of Arousal training: combining the alarm device with reinforcement for correct behaviour at the time the alarm goes off. Parents in control conditions did not use the alarm device as often as the parents in the Arousal condition, but tried other means with less success, including consulting professionals.     

A differential photoconductive AND gate with Be-dopedlow-temperature-grown InGaAs-InAlAs MQW MSM-PD's

A novel photoconductive AND gate that overcomes the problems of: 1) the long tail of photoconductive switches and 2) signal leakage via switch capacitance (signal feedthrough) is proposed. We use Be-doped low-temperature (LT)-grown InGaAs-InAlAs MQW metal-semiconductor-metal photodetectors (MSM-PD's) to get a shorter turn-off time and propose a differential AND gate to cancel the signal feedthrough. A comparison between LT-grown MSM-PD's and those fabricated by ion implantation shows that the LT-grown ones are ultrafast with a full width at half maximum of 5.3 ps and are suitable for low-bias operation. It is experimentally confirmed that the differential AND gate completely cancels the signal feedthrough in the picosecond region. The differential AND gate: with the LT MSM-PD's achieves return-to-zero (RZ) 20 Gb/s AND operation     

NRZ operation at 40 Gb/s of a compact module containing an MQW electroabsorption modulator integrated with a DFB laser

NRZ operation at 40 Gb/s has been successfully performed using a very compact module of a multiple-quantum-well (MQW) electroabsorption modulator integrated with a distributed-feedback (DFB) laser. While the DFB laser is injected with a constant current, the integrated MQW electroabsorption modulator is driven with a 10-Gb/s electrical NRZ signal. A clearly opened eye diagram has been observed in the modulated light from the modulator. And a receiver sensitivity of -27.2 dBm at 10/sup -9/ has been experimentally confirmed in the bit-error-rate (BER) performance.     

Analytical study on guided modes in vertical strip line embedded in NRD guide

Guided modes in a vertical strip line embedded in a non-radiative dielectric (NRD) guide were analysed based on the two-dimensional finite-element method. The dominant mode in this guiding structure is the TEM wave, and furthermore, it is evident that a quasi-LSM/sub 11/ odd mode occurs when a wide metal strip is used, whereas a quasi-LSE/sub 01/ even mode is generated when a narrow strip is employed.     

Analysis and application of a novel model for estimating powerdissipation of optical interconnections as a function of transmissionbit error rate

This paper proposes a novel model for estimating power dissipation of optical/electrical interconnections as a function of transmission bit error rate. This model is applied to a simplified optoelectronic transmitter and receiver configuration in which a photodetector is directly connected to the decision circuit. It is analytically verified that this configuration can achieve error-free operation with low power under practical operating conditions. A comparison between optical and electrical interconnections based on this simplified configuration is performed. This result shows the interconnection length and bit rate at which optical interconnection is superior in terms of power dissipation to electrical interconnection, Only optical interconnections achieve error-free operation with 40 mW power dissipation at a transmission bit rate of 10 Gb/s and an interconnection length over 7 m     

Afterloading technique for interstitial irradiation of lesions in deep-seated organs

An afterloading procedure using iridium 192 seeds was developed for the control of both localized primary lesions that are difficult to remove and superficial residual lesions that remain after the partial removal of tumors in relatively inaccessible, deep-seated organs. This technique makes possible the delivery of a minimal radiation dose to lesions in deep-seated organs. Fewer complications result, the seeds can be adjusted at appropriate intervals in proportion to the amount of radioactivity desired, and radiation exposure to personnel can be reduced. This paper describes the techniques and apparatus used to place the seeds in the tubing. Primary lesions of the urinary bladder, the prostate gland, and the esophagus, residual lesions in the brain and lung, and metastases in intrapelvic lymph nodes were treated. No technical difficulties or complications were encountered. Radiation exposures to personnel were minimized. The results indicate that the procedure has practical applications.     

Tube-contacted slab waveguide for millimetre and submillimetre waves

A new type of dielectric waveguide, which we call a tube-contacted slab waveguide, is proposed for millimetre and sub-millimetre waves. Transverse sizes of the waveguide can be made much larger than the wavelength. Dispersion characteristics and field distributions of the guided modes are calculated using the method of effective dielectric constant.